703078AY
Abstract: 70F3079AY NEC D76 70307 U14665EJ4V0UD uPD703075AY uPD703076AY uPD703078AY uPD703078Y uPD703079YGC
Text: User’s Manual V850/SF1 32-Bit Single-Chip Microcontroller Hardware µPD703075AY µPD703075AY A µPD703076AY µPD703076AY(A) µPD703078AY µPD703078AY(A) µPD703078Y µPD703079AY µPD703079AY(A) µPD703079Y Document No. U14665EJ4V0UD00 (4th edition) Date Published September 2003 N CP(K)
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V850/SF1
32-Bit
PD703075AY
PD703075AY
PD703076AY
PD703076AY
PD703078AY
PD703078AY
PD703078Y
PD703079AY
703078AY
70F3079AY
NEC D76
70307
U14665EJ4V0UD
uPD703075AY
uPD703076AY
uPD703078AY
uPD703078Y
uPD703079YGC
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Untitled
Abstract: No abstract text available
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8230TU SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The PC8230TU is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the
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PC8230TU
PC8230TU
HS350
WS260
IR260
PU10612EJ01V0DS
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617DB-1674
Abstract: UPC3231gv UPC3231GV-E1-A
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3231GV GENERAL PURPOSE 5 V 100 MHz AGC AMPLIFIER DESCRIPTION The µPC3231GV is a silicon monolithic IC designed for use as AGC amplifier for digital CATV, cable modem and digital terrestrial systems. This IC consists of gain control amplifier and video amplifier.
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PC3231GV
PC3231GV
617DB-1674
UPC3231gv
UPC3231GV-E1-A
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536EP
Abstract: UPD70F3079AYGC-8EU tsc102 703078AY FA100GC-8EU FA-100GC-8EU
Text: User’s Manual TM V850/SF1 32-Bit Single-Chip Microcontroller Hardware µPD703075AY µPD703076AY µPD703078AY µPD703078Y µPD703079AY µPD703079Y µPD70F3079AY µPD70F3079Y Document No. U14665EJ3V0UD00 3rd edition Date Published January 2003 N CP(K) 2000, 2003
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V850/SF1
32-Bit
PD703075AY
PD703076AY
PD703078AY
PD703078Y
PD703079AY
PD703079Y
PD70F3079AY
PD70F3079Y
536EP
UPD70F3079AYGC-8EU
tsc102
703078AY
FA100GC-8EU
FA-100GC-8EU
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
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NESG3033M14
NESG3032M14.
NESG3033M14
NESG3033M14-A
NESG3033M14-T3
NESG3033M14-T3-A
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ST3215
Abstract: No abstract text available
Text: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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RL78/G13
16-Bit
R01UH0146EJ0310
ST3215
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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RO4003
Abstract: HS350 NEC RF Switch CMOS marking BB INA
Text: DATA SHEET CMOS INTEGRATED CIRCUIT µPD5715GR CMOS MMIC 4 x 2 IF SWITCH MATRIX FEATURES • 4 independent IF channels, integral switching to channel input to either channel output • Integrated 4 bit decoder • Frequency range : f = 250 to 2 150 MHz • High isolation D/U ratio
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PD5715GR
16-pin
PD5715GR-E1
PD5715GR-E1-A
D5715r
PU10601EJ01V0DS
RO4003
HS350
NEC RF Switch CMOS
marking BB INA
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TI121
Abstract: NEC d464 703088Y alu 9308 d TI120 T3168 PD703088 813 P121 GR GE CR120 BY728
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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V850/SC1TM,
V850/SC2TM,
V850/SC3TM
PD703068Y
PD703069Y
PD703088Y
PD703089Y
PD70F3089Y
U15109JJ3V0UD003
U15109JJ3V0UD
TI121
NEC d464
703088Y
alu 9308 d
TI120
T3168
PD703088
813 P121 GR
GE CR120
BY728
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marking 6-PIN PLASTIC TSON
Abstract: HS350
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d5716
Abstract: HS350 RO4003
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PU10620EJ01V0DS
PD5716GR
d5716
HS350
RO4003
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NESG3033M14-T3
Abstract: MCR01MZPJ5R1 NESG3033M14 AML1005H5N6STS NESG3032M14 NESG3033M14-A NESG3033M14-T3-A GRM1552C1H GRM155B11H GRM1552C1H270J
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PC3237TK
Abstract: 2T 970
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PC3237TK
PU10675JJ01V0DS
IR260
WS260
HS350
M8E02
PC3237TK
2T 970
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NE5814M14
Abstract: MOS4 NE5814 HS350 transistor 20 dB
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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NE5814M14
PG10628JJ01V0DS
IR260
WS260
HS350
M8E02
NE5814M14
MOS4
NE5814
HS350
transistor 20 dB
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HS350
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PC8232T5N
8232T5N
PU10672JJ02V0DS
IR260
WS260
HS350
HS350
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703078AY
Abstract: No abstract text available
Text: User’s Manual V850/SF1 32-Bit Single-Chip Microcontrollers Hardware µPD703075AY µPD703075AY A µPD703076AY µPD703076AY(A) µPD703078AY µPD703078AY(A) µPD703078Y µPD703079AY µPD703079AY(A) µPD703079Y Document No. U14665EJ5V0UD00 (5th edition) Date Published August 2005 N CP(K)
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V850/SF1
32-Bit
PD703075AY
PD703075AY
PD703076AY
PD703076AY
PD703078AY
PD703078AY
PD703078Y
PD703079AY
703078AY
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TRANSFORMER RF 4.5-MHz 1F
Abstract: 617DB-1674 HS350 5332 ssop PC3234GV
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3234GV GENERAL PURPOSE 5 V 100 MHz AGC AMPLIFIER DESCRIPTION The μPC3234GV is a silicon monolithic IC designed for use as AGC amplifier for digital CATV, cable modem and digital terrestrial systems. This IC consists of gain control amplifier and video amplifier.
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PC3234GV
PC3234GV
TRANSFORMER RF 4.5-MHz 1F
617DB-1674
HS350
5332 ssop
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R5F100LEA
Abstract: R5F100 R5F100AA R5F100LE R5F100ACDSP R5F100AE R01US0015E R20UT0008E R5F101 R5F10
Text: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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RL78/G13
16-Bit
R01UH0146EJ0200
R5F100LEA
R5F100
R5F100AA
R5F100LE
R5F100ACDSP
R5F100AE
R01US0015E
R20UT0008E
R5F101
R5F10
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PC8231TK
Abstract: marking 6K
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8231TK SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The PC8231TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. This device exhibits low noise figure and high power gain
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PC8231TK
PC8231TK
HS350
WS260
IR260
PU10613EJ01V0DS
marking 6K
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HS350
Abstract: PU106 PC8230TU
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT MPC8230TU SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The MPC8230TU is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the
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PC8230TU
PC8230TU
HS350
PU106
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HS350
Abstract: No abstract text available
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8232T5N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The µPC8232T5N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the
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PC8232T5N
PC8232T5N
HS350
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70F3017A
Abstract: PU106 V850 U15673E uPD703014B uPD703014BY uPD703015B uPD703015BY WT470 v850 architecture CR10
Text: User’s Manual TM V850/SA1 32-Bit Single-chip Microcontroller Hardware µPD703014A µPD703014AY µPD703014B µPD703014BY µPD703015A µPD703015AY µPD703015B µPD703015BY µPD703017A µPD703017AY µPD70F3015B µPD70F3015BY µPD70F3017A µPD70F3017AY Document No. U12768EJ4V0UD00 4th edition
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V850/SA1
32-Bit
PD703014A
PD703014AY
PD703014B
PD703014BY
PD703015A
PD703015AY
PD703015B
PD703015BY
70F3017A
PU106
V850 U15673E
uPD703014B
uPD703014BY
uPD703015B
uPD703015BY
WT470
v850 architecture
CR10
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8232T5N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8232T5N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the
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PC8232T5N
PC8232T5N
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3237TK LOW NOISE WIDE BAND SILICON GERMANIUM MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The μPC3237TK is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for the
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PC3237TK
PC3237TK
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