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PUA3211 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Power Transistor Arrays PUA3211 PU3211 Silicon PNP epitaxial planar type For power amplification Complementary to PUA3111 (PU3111) Unit: mm 20.2±0.3 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open)	Original	PUA3211 PU3211) PUA3111 PU3111)	PDF
PU3111 Abstract: PU3211 PUA3111 PUA3211 Contextual Info: Power Transistor Arrays PUA3111 PU3111 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3211 (PU3211) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Rating	Original	PUA3111 PU3111) PUA3211 PU3211) PU3111 PU3211 PUA3111 PUA3211	PDF
Contextual Info: Power Transistor Arrays PUA3111 PU3111 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3211 (PU3211) Unit: mm 8.0±0.2 4.0±0.2 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat)	Original	PUA3111 PU3111) PUA3211 PU3211)	PDF
Contextual Info: Power Transistor Arrays PUA3111 PU3111 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3211 (PU3211) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Rating	Original	PUA3111 PU3111) PUA3211 PU3211)	PDF
PU3211 Abstract: PU3111 PUA3111 PUA3211 Contextual Info: Power Transistor Arrays PUA3211 PU3211 Silicon PNP epitaxial planar type For power amplification Complementary to PUA3111 (PU3111) Unit: mm 20.2±0.3 Solder Dip 5.3±0.5 4.4±0.5 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low	Original	PUA3211 PU3211) PUA3111 PU3111) PU3211 PU3111 PUA3111 PUA3211	PDF
Contextual Info: Power Transistor Arrays PUA3211 PU3211 Silicon PNP epitaxial planar type For power amplification Complementary to PUA3111 (PU3111) Unit: mm 20.2±0.3 Solder Dip 5.3±0.5 4.4±0.5 M Di ain sc te on na tin nc ue e/ d 9.5±0.2 1.65±0.2 • Low collector-emitter saturation voltage VCE(sat)	Original	PUA3211 PU3211) PUA3111 PU3111)	PDF
PU3111 Abstract: PU3211 PUA3111 PUA3211 Contextual Info: Power Transistor Arrays PUA3111 PU3111 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3211 (PU3211) Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)	Original	PUA3111 PU3111) PUA3211 PU3211) PU3111 PU3211 PUA3111 PUA3211	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928	PDF