PUA3212 Search Results

Contextual Info: Power Transistor Arrays PUA3112 PU3112 Silicon NPN epitaxial planar type For power amplification/switching Complementary to PUA3212 (PU3212) Unit: mm 8.0±0.2 4.0±0.2 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat)

PU3112

Abstract: PU3212 PUA3112 PUA3212
Contextual Info: Power Transistor Arrays PUA3112 PU3112 Silicon NPN epitaxial planar type For power amplification/switching Complementary to PUA3212 (PU3212) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

PU3112

Abstract: PU3212 PUA3112 PUA3212
Contextual Info: Power Transistor Arrays PUA3112 PU3112 Silicon NPN epitaxial planar type For power amplification/switching Complementary to PUA3212 (PU3212) Unit: mm • Absolute Maximum Ratings TC = 25°C Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and