Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PUB4210 PU4210 , PUB4510 (PU4510) Silicon PNP epitaxial planar type For power amplification Complementary to PUB4110 (PU4110), PUB4410 (PU4410) Unit: mm • Feature 25.3±0.2 9.5±0.2 1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5 ■ Absolute Maximum Ratings TC = 25°C
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PUB4210
PU4210)
PUB4510
PU4510)
PUB4110
PU4110)
PUB4410
PU4410)
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PU4110
Abstract: PU4210 PU4410 PU4510 PUB4110 PUB4210 PUB4410 PUB4510
Text: Power Transistor Arrays PUB4110 PU4110 , PUB4410 (PU4410) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4210 (PU4210), PUB4510 (PU4510) Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 25.3±0.2 Collector-base voltage (Emitter open)
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PUB4110
PU4110)
PUB4410
PU4410)
PUB4210
PU4210)
PUB4510
PU4510)
PU4110
PU4210
PU4410
PU4510
PUB4110
PUB4210
PUB4410
PUB4510
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PU4110
Abstract: PU4210 PU4410 PU4510 PUB4110 PUB4210 PUB4410 PUB4510 tic103
Text: Power Transistor Arrays PUB4210 PU4210 , PUB4510 (PU4510) Silicon PNP epitaxial planar type For power amplification Complementary to PUB4110 (PU4110), PUB4410 (PU4410) Unit: mm • Feature 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE
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PUB4210
PU4210)
PUB4510
PU4510)
PUB4110
PU4110)
PUB4410
PU4410)
PU4110
PU4210
PU4410
PU4510
PUB4110
PUB4210
PUB4410
PUB4510
tic103
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PU4110
Abstract: PU4210 PU4410 PU4510 PUB4110 PUB4210 PUB4410 PUB4510
Text: Power Transistor Arrays PUB4110 PU4110 , PUB4410 (PU4410) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4210 (PU4210), PUB4510 (PU4510) Unit: mm • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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PUB4110
PU4110)
PUB4410
PU4410)
PUB4210
PU4210)
PUB4510
PU4510)
PU4110
PU4210
PU4410
PU4510
PUB4110
PUB4210
PUB4410
PUB4510
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Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PUB4110 PU4110 , PUB4410 (PU4410) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4210 (PU4210), PUB4510 (PU4510) Unit: mm • Features 25.3±0.2 4.0±0.2 9.5±0.2 1.65±0.2 Solder Dip
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PUB4110
PU4110)
PUB4410
PU4410)
PUB4210
PU4210)
PUB4510
PU4510)
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PU4110
Abstract: PU4210 PU4410 PU4510 PUB4110 PUB4210 PUB4410 PUB4510
Text: Power Transistor Arrays PUB4210 PU4210 , PUB4510 (PU4510) Silicon PNP epitaxial planar type For power amplification Complementary to PUB4110 (PU4110), PUB4410 (PU4410) M Di ain sc te on na tin nc ue e/ d Unit: mm • Feature 25.3±0.2 9.5±0.2 1.65±0.2 Solder Dip
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PUB4210
PU4210)
PUB4510
PU4510)
PUB4110
PU4110)
PUB4410
PU4410)
PU4110
PU4210
PU4410
PU4510
PUB4110
PUB4210
PUB4410
PUB4510
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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