PWB CCD Search Results

R610M

Abstract: PAD24
Contextual Info: NWK939 Layout Application Information Rev. A2 Overview This document provides a description of PWB layout considerations for the NWK939 10BASE-T/ 100BASE-TX Physical Layer Device. The objective of the document is to help you successfully implement the NWK939 in your High Speed Network Design. While these recommendations

NVIDIA G86

Abstract: OZ77CR6LN ECE1077 OZ711EZ1TN UW445 ECE5028 OZ77CR6L OZ77CR6 EMC4001 quanta
Contextual Info: 1 2 3 4 5 6 7 PWA FP382, PWB UW445, SCHEM PM333. 128MB VER : 2B JM7B-DISCRETE JM7B M/B PCB A A POWER AC/BATT CONNECTOR PG 54 SYSTEM RESET CIRCUIT PG 44 BATT SELECTOR PG 45 BATT CHARGER PG 46 RUN POWER SW PG 53 (478 Micro-FCPGA) CPU VR PG 51 +1.25V_RUN/+1.05V_VCCP/

ECE1077

Abstract: DY483 MAX8786 OZ77CR6LN UW474 OZ77CR6 EMC 5755 MEC5025 bc23 transistor Transistor hall s41
Contextual Info: 1 2 3 4 5 6 7 PWA FP381, PWB DY483, SCHEM UW474. VER : 1A JM7-INTEGRATED JM7 M/B PCB A POWER AC/BATT CONNECTOR PG 54 SYSTEM RESET CIRCUIT PG 44 BATT SELECTOR PG 45 BATT CHARGER PG 46 RUN POWER SW PG 53 POWER Merom 478 Micro-FCPGA +1.5V_RUN/+1.05V_VCCP PG 3,4

MEC5025

Abstract: max8786 MAXIM 8731 E BCM5755M ECE5028 OZ77CR6 MAX8778 UW445 OZ77CR6LN Mec R68
Contextual Info: 1 2 3 4 5 6 7 PWA FP382, PWB UW445, SCHEM PM333. 128MB VER : 2A JM7B-DISCRETE JM7B M/B PCB A A POWER AC/BATT CONNECTOR PG 54 SYSTEM RESET CIRCUIT PG 44 BATT SELECTOR PG 45 BATT CHARGER PG 46 RUN POWER SW PG 53 (478 Micro-FCPGA) CPU VR PG 51 +1.25V_RUN/+1.05V_VCCP/

max8786

Abstract: UW445 ECE1077 ISL6236 NVIDIA G86 OZ711EZ1TN quanta OZ77CR6 OZ77CR6LN ECE5028
Contextual Info: 1 2 3 4 5 6 7 PWA FP382, PWB UW445, SCHEM PM333. 128MB VER : 2B JM7B-DISCRETE JM7B M/B PCB A A POWER AC/BATT CONNECTOR PG 54 SYSTEM RESET CIRCUIT PG 44 BATT SELECTOR PG 45 BATT CHARGER PG 46 RUN POWER SW PG 53 (478 Micro-FCPGA) CPU VR PG 51 +1.25V_RUN/+1.05V_VCCP/

PWB CCD

Abstract: D1140 automatic volume control balance machine TOUCH CONTROL volume control transistor D1140 image processor
Contextual Info: 1/1 001-01 / 20010831 / eh3_mdm_2.fm FA Systems MDM-2 Dispenser FEATURES • TDK's multi-dispenser, MDM-2 controls precisely dispensing volume by cast size and are improved dispensing balance accuracy. • Newly developed Image Processor controls a very small

Laser Diode 405 nm Sharp

Abstract: LR36B15 LR388K4 Laser Diodes 405 nm catalog PQ1LAxx5MSPQ Series
Contextual Info: Electronic Components http://sharp-world.com/products/device/ March 2015 2015-03 CONTENTS TFT LCD 2 LCD Modules. 2 Imaging CMOS IMAGE SENSORS / CCDs 6 CMOS Camera Modules Road Map. 6

transistor SMD t04

Abstract: smd transistor t04 SMD Transistors t04 88 transistor T04 smd SMD Transistors t04 t04 smd transistor transistor SMD t04 46 transistor SMD t04 64 transistor SMD t04 78 tyco igbt module 25A
Contextual Info: Optical Semiconductor Devices Visible LEDs z 248 Photo Couplers z 254 Photo Sensors z 272 Fiber-Optic Devices TOSLINK z 278 Visible Laser Diodes z 281 Optical Communication Devices z 281 CCD and CMOS Image Sensors z 282 247 Visible LEDs InGaAP High-Brightness (Package Size :ϕ 5)

AN30213A

Abstract: vh21
Contextual Info: Facilitating more compact and lightweight equipment designs. Power Control IC for ASSPs AN30213A „ Overview The AN30213A IC has three channels of PWM-based DCDC converter control outputs. Able to operate on a minimum operating voltage as low as 1.7V, the IC can be powered from two batteries. A timesharing system does not require a transformer in the CCD

TCD2703ADG

Abstract: transistor BC 945 THS119 CIPS218CF601 CIPS308BS621 TCD2704DG TCD2955 tcd2704dg-1 tcd2705 TPS606
Contextual Info: Sensors/Image Pickup Devices Photo Sensors z 274 Image Sensors z 280 Magnetic Sensors z 283 273 Photo Sensors Infrared LEDs and Visible LEDs for Sensor Application Electrical/Optical Characteristics Ta = 25°C Part Number Radiant intensity (mW/sr) Features

bs2s7vz

Abstract: pc3hu7 GP1UX31QS RJ2351 DARLINGTON TRANSISTOR ARRAY gw6dge40 PQ1LAxx5MSPQ Series PQ1CX41 LR0G956 LR35501
Contextual Info: Electronic Components http://sharp-world.com/products/device/ March 2014 2014-03 CONTENTS TFT LCD 2 LCD Modules. 2 Imaging CMOS IMAGE SENSORS / CCDs SYSTEM LSIs 18 System LSIs . 18

TCD2959BFG

Abstract: TCD1709DG TCD2964BFG TCD2713DG TCD2716DG tcd2563bfg TCD1708DG tcd2704dg-1 TCD2955BFG TCD2959
Contextual Info: Sensors/Image Pickup Devices Photosensors z 272 Image Sensors z 276 271 Photosensors Infrared LEDs and Visible LEDs for Sensor Light Sources Electrical/Optical Characteristics Ta = 25°C Part Number with Rank Part Number TLN108(F) TLN201(F) TLN105B(F) TLN110(F)

CN502

Abstract: CN501 MCB100 MCB101 sony factory codes SM04B-SRSS-TB design luminous sine wave inverter single phase photo sensor devices sony digital dc voltmeter -AE make wiring colors normal camera sony
Contextual Info: MCB100/101 Color CCD Camera Module 1. Features The MCB100/101 are color CCD camera modules equipped with the micro unit CCD MUC , MCX18N00A/B. • Single +5V power supply (approximately 1.2W) • NTSC video output • AE with backlight compensation, auto trace type

1cz1 sharp

Abstract: 24v dc soft start motor control diagram 12v dc soft start motor control diagram 1cz1 12v soft start DC motor control diagram APPLICATIONS OF dc chopper circuit TV Tuner sharp Tuner sharp QPSK sharp tv circuit diagram 12v to 5v power supply switching circuit diagram
Contextual Info: Surface Mount Type Chopper Regulator P O PQ1CZ1 Industry’s F irst Compact Surface Mount Type Chopper Regulator 1 C Z 1 ^ • G en eral Description ■ O u tlin e Dim ensions Unit : mm Sharp’s PQ1CZ1 is compact chopper type regu­ lator employing surf ace mount package. It is

NPT100

Contextual Info: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance

NPT1004

Abstract: NPT1004DR NPT1004DT NPT1004D J-162 25001-2 EAR99 JESD22-A113 JESD22-A114 2500-2700MHz
Contextual Info: NPT1004 Datasheet Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz

TC03

Contextual Info: Features Applications • High temperature plastic rotor ■ Car radios ■ Recommended for reflow processing ■ Color printers ■ Rotor design compatible with pick and ■ Cordless telephones place and automatic adjustment equipment ■ Supplied in 8mm embossed tape, compatible with automatic assembly equipment

Contextual Info: Features Applications • High temperature plastic rotor ■ Car radios ■ Recommended for reflow processing ■ Color printers ■ Rotor design compatible with pick and ■ Cordless telephones place and automatic adjustment equipment ■ Supplied in 8mm embossed tape, compatible with automatic assembly equipment

Contextual Info: For technical assistance call the Strategic Products number on the back cover. Features Applications • High temperature plastic rotor ■ Recommended for reflow processing ■ Rotor design compatible with pick and place and automatic adjustment equipment

Contextual Info: Features Applications • High temperature plastic rotor ■ Car radios ■ Recommended for reflow processing ■ Color printers ■ Rotor design compatible with pick and ■ Cordless telephones place and automatic adjustment equipment ■ Supplied in 8mm embossed tape, compatible with automatic assembly equipment

TC03

Abstract: marking code 501 Ccd pwb 04
Contextual Info: Features Applications • High temperature plastic rotor ■ Car radios ■ Recommended for reflow processing ■ Color printers ■ Rotor design compatible with pick and ■ Cordless telephones place and automatic adjustment equipment ■ Supplied in 8 mm embossed tape, compatible with automatic assembly equipment

photo switch p832

Abstract: TLN100 TLP1214A TLP1200 p832 wireless headphones DVD optical pick-up assembly TLP910 JAPAN P832 optical sensor VISIBLE LIGHT MATRIX
Contextual Info: 2008-3 PRODUCT GUIDE Photosensors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Contents 1. Part No. Index . 2 8. Application Examples .14 2. New Product Digest . 3

PIMD3

Contextual Info: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz

NPT25015

Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT
Contextual Info: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP