PWSN0006ZA Search Results

LP1- E

Abstract: PWSN0006ZA
Contextual Info: JEITA Package Code P-HWSON6-3x3-0.80 Package Name HWSON-6 RENESAS Code PWSN0006ZA-A Previous Code MASS[Typ.] 0.022 g Under development e1 D A e1 /2 b2 Lp2 E Lp1 e e /2 b1 B Reference Symbol A2 c y S b A1 A Seating plane S A A1 A2 b b1 b2 c D E e e1 Lp1 Lp2

hwson-6 ion

Abstract: M2201 RQM2201DNS RQM2201DNSTL-E RQM2201DNSTR-E PWSN0006ZA a1sa
Contextual Info: RQM2201DNS Silicon N Channel MOS FET Power Switching REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Features • • • • • Small, thin and leadless type package 3 x 3 mm, t = 0.8 mm max. Two FET chips are mounted in one package High density mounting High speed switching. (Ciss = 200 pF typ)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

M2201

Abstract: RQM2201DNS RQM2201DNSTL-E RQM2201DNSTR-E hwson-6 ion
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

23P transistor sot 23

Abstract: PTZZ0005DA-A PWSN0008DD-A electrical symbol PRSP0008DD-D PRSP0008DA-B PRSP0008DD-A G300721H02 TSSOP-8 8d
Contextual Info: Unit:mm Reel type A B Ｃ Ｄ E F A 330 330 178 178 330 178 W 12 12 12 P1 8 8 8 A0 4.8 6.9 7 12.0 8.0 4.8 N 80 100 60 60 100 66 W1 13.5 13.5 13 13 13.4 13.5 W2 17.5 17.5 17 15.4 17.4 15.5 12-mm width emboss taping Taping code Package name Renesas code Previous code

hwson-6 ion

Contextual Info: RQM2201DNS Silicon N Channel MOS FET Power Switching REJ03G1492-0100 Rev.1.00 Dec 12, 2006 Features • • • • • Small, thin and leadless type package 3 x 3 mm, t = 0.8 mm max. Two FET chips are mounted in one package High density mounting High speed switching. (Ciss = 200 pF typ)