PZTA56 Search Results

Contextual Info: Product specification PZTA56 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● Collector current DC ：IC=500mA +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power dissipation：PC=1W +0.2 0.90-0.2 +0.1 3.00-0.1 ● Complementary NPN Type Available (PZTA06)

MPSA56

Abstract: BEL 188 pnp TRANSISTOR characteristics CBVK741B019 F63TNR MMBTA56 PN2222N PZTA56
Contextual Info: MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 73 Absolute Maximum Ratings* TA = 25°C unless otherwise specified. Parameter

MMBTA56

Abstract: MPSA56 PZTA56
Contextual Info: MPSA56 PZTA56 & D iscrete POW ER & S ig n a l Technologies National Semiconductor" MPSA56 PZTA56 MMBTA56 ♦ S O T -2 2 3 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.

AFL SOT223

Abstract: PNP Epitaxial Silicon Transistor sot223 PZTA55 PZTA56 tAN philips smd
Contextual Info: Philips Semiconductors Data sheet status Preliminary specification date of issue ¡April 1991 DESCRIPTION PZTA55/PZTA56 Silicon epitaxial transistors QUICK REFERENCE DATA PNP transistors in a microminiature plastic envelope intended for surface mounted SMD

a56 transistor

Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor PZTA56 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● Collector current DC ：IC=500mA +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power dissipation：PC=1W +0.2 0.90-0.2 +0.1 3.00-0.1

4963N

Abstract: BTA56
Contextual Info: MPSA56 MMBTA56 PZTA56 SOT-23 SOT-223 M ark: 2G PNP General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted

Contextual Info: bbS3T31 Q02bQSD 1S3 H A P X Philips Semiconductors D a ta s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e A p ril 1991 PZTA55/PZTA56 Silicon epitaxial transistors N AMER PHILIPS/DISCRETE » QUICK REFERENCE DATA DESCRIPTION PNP transistors in a microminiature

dk sot223 pnp

Abstract: str 6752 BP317 PZTA06 PZTA56
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA56 PNP general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 01 Philips Semiconductors Product specification PNP general purpose transistor

SMD T26

Abstract: PZTA55 smd transistor js PZTA56
Contextual Info: Philips Semiconductors Data sheet status Prelim inary specification date of issue April 1991 I bbS3T31 OOELiOSD 1S3 H A P X PZTA55/PZTA56 Silicon epitaxial transistors N AUER P H I L I P S / D I S C R E T E DESCRIPTION QUICK REFERENCE DATA PNP transistors in a microminiature

Contextual Info: Philips Semiconductors Data sheet status Preliminary specification 7110a5h DObTTflb 3S3 B P H I N PZTA55/PZTA56 Silicon epitaxial transistors date of issue j April 1991 QUICK REFERENCE DATA DESCRIPTION SYMBOL -VCBO PARAMETER collector-base voltage CONDITIONS

Contextual Info: S s s j M iC ^ w - N U ^ v J U :;r o * 1* MPSA56 MMBTA56 PZTA56 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum RatinQS TA = 25°C unless otherwise noted

PZTA56 SOT-223

Abstract: CBVK741B019 F63TNR MMBTA56 MPSA56 PN2222N PZTA56 pnp transistor bel 188
Contextual Info: MMBTA56 PZTA56 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMBTA56

Abstract: MPSA56 PZTA56 MPSA56 Fairchild BF-91
Contextual Info: MMBTA56 PZTA56 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPSa56 equivalent

Abstract: MMBTA56 MPSA56 PZTA56 C-20-50
Contextual Info: MPSA56 MMBTA56 PZTA56 C C E E C BE TO-92 SOT-23 C B B SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol

mark 1009

Abstract: MMBTA56 MPSA56 PZTA56 BF-91
Contextual Info: N MPSA56 MMBTA56 PZTA56 C C E E C BE TO-92 SOT-23 C B B SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol

Contextual Info: MPSA56 I MMBTA561 PZTA56 Discrete POWER & Signal Technologies National Semiconductor PZTA56 MMBTA56 MPSA56 SOT-23 SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.

MPSA56

Abstract: bel 188 transistor pnp 4963N CBVK741B019 F63TNR MMBTA56 PN2222N PZTA56
Contextual Info: MMBTA56 PZTA56 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 PZTA56 TRANSISTOR PNP FEATURES   1. BASE Low Voltage and High Current General Purpose Amplifier Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

bf91

Contextual Info: MMBTA56 PZTA56 C C E C B TO-92 B SOT-23 E SOT-223 Mark: 2G B E C MPSA56 / MMBTA56 / PZTA56 MPSA56 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings*

MPSa56 equivalent

Abstract: MMBTA56 MPSA56 PZTA56
Contextual Info: MPSA56 MMBTA56 PZTA56 C C E E C BE TO-92 SOT-23 C B B SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

2n2222a SOT23

Abstract: 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Discrete Semiconductors, SC04 1997 Aug 06 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE

PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11

8F SOT-23 PNP on

Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
Contextual Info: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process