PZTA64 Search Results

l5 transistor PNP

Abstract: PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64
Contextual Info: MPSA641 PZTA64 _ National D iscrete P O W E R & S ig n a l T e ch n o lo g ie s S e m i c o n d u c t o r ' “ ß MPSA64 MMBTA64 PZTA64 SOT-23 SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high

TRANSISTOR A64

Abstract: a64 TRANSISTOR sot23 a64 MMBTA64 MPSA64 PZTA64 darlington sot23 pnp a64 sot
Contextual Info: MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol

Contextual Info: bb53T31 DDEbOEB ‘IbE « A P X PZTA63 PZTA64 b7E D N AUER PHILIPS/DISCRETE J V SMALL-SIGNAL DARLINGTON TRANSISTORS PNP small-signal Darlington transistors in a microminiature SMD envelope SOT-223 . Designed primarily fo r preamplifier input applications requiring high input impedance.

PZTA64

Abstract: VPS05163 PZTA13 PZTA14 PZTA63
Contextual Info: PZTA13, PZTA14 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: PZTA63, PZTA64 PNP 3 2 1 Type Marking Pin Configuration PZTA13 PZTA 13 1=B 2=C 3=E 4=C SOT223 PZTA14 PZTA 14

PZTA14T1

Abstract: PZTA64T1 PZTA64T3 SMD310
Contextual Info: MOTOROLA Order this document by PZTA64T1/D SEMICONDUCTOR TECHNICAL DATA PZTA64T1 PNP SmallĆSignal Darlington Transistor Motorola Preferred Device This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance.

BEL 188 pnp TRANSISTOR characteristics

Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
Contextual Info: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: MPSA64 / MMBTA64 / PZTA64 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA64 MPSA64 PZTA64 C C E E TO-92 SOT-23 Absolute Maximum Ratings*

sot 23 mark 2v

Abstract: darlington sot23 pnp
Contextual Info: MPSA64 / MMBTA64 / PZTA64 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA64 MPSA64 PZTA64 C C E E TO-92 SOT-23 Absolute Maximum Ratings*

PZTA63

Abstract: PZTA64
Contextual Info: • bbSBTBl DD2b023 TbE H A P X N AMER PH ILIPS/DISCRETE PZTA63 PZTA64 L7E » SM ALL-SIG NAL DARLINGTON TRANSISTORS PIMP small-signal D a rlin g to n transistors in a m icro m in ia tu re SM D envelope SO T-223 . Designed p rim a rily f o r p re a m p lifie r in p u t applications requiring high in p u t impedance.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA64T1 PNP Small-Signal Darlington Transistor Motorola Preferred Device This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance.

sot-223 body marking D K Q F

Contextual Info: Order th is data sheet by PZTA64T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA64T1 PNP Small-Signal Darlington Transistor M o to ro la P referre d D evice This PNP small-signal darlington transistor.is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance.

BTA64

Abstract: sot 23 mark 2v
Contextual Info: S E M IC O N D U C T O R tm MPSA64 MMBTA64 SOT-23 Mark: 2V PZTA64 B SOT-223 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum RâtinÇjS

sot 23 mark 2v

Abstract: darlington sot23 pnp
Contextual Info: MMBTA64 PZTA64 C C E C B TO-92 SOT-23 E B SOT-223 Mark: 2V B E C MPSA64 / MMBTA64 / PZTA64 MPSA64 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings*

BEL 188 pnp TRANSISTOR characteristics

Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
Contextual Info: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

dk sot223 pnp

Abstract: PNP TRANSISTOR SOT223 BP317 PZTA14 PZTA64
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA64 PNP Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification PNP Darlington transistor

TRANSISTOR A64

Abstract: FAIRCHILD SOT-223 MARK MMBTA64 MPSA64 PZTA64
Contextual Info: S E M IC O N D U C T O R tm MPSA64 MMBTA64 TO-92 SOT-23 PZTA64 B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Màximum Rdtinys

Contextual Info: PZTA13, PZTA14 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: PZTA63, PZTA64 PNP 3 2 1 Pin Configuration VPS05163 Type Marking Package PZTA13 PZTA 13 1=B 2=C 3=E 4=C

MMBTA64

Abstract: MPSA64 PZTA64 AP-61 FAIRCHILD SOT-223 MARK
Contextual Info: MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol

Contextual Info: PZTA64T1* CASE 318E-04, STYLE 1 TO-261AA M AXIMUM RATINGS Rating Symbol Value C o lle c to r - E m itte r V o lta g e VCES - 30 Vdc C o lle c to r - B a s e V o lta g e VCBO -3 0 Vdc ve b o - 10 Vdc 1.5 W a tts - 500 m Adc E m itte r - B a s e V o lta g e

PZTA14

Contextual Info: PZTA13, PZTA14 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: PZTA63, PZTA64 PNP 3 2 1 Type Marking Pin Configuration PZTA13 PZTA 13 1=B 2=C 3=E 4=C SOT223 PZTA14 PZTA 14

ad1149

Abstract: PZTA63 PZTA63T1 PZTA63T3 PZTA64 PZTA64T1 PZTA64T3 sot 223 sot-223 body marking D K Q F
Contextual Info: Order this data sheet by PZTA63T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA63TI ,T3 PZTA64TI ,T3 Advance information PNP Small-Signal Darlington Transistors This family of PNP small-signal darlington transistors is designed for use in preamplifiers input applications or wherever it is necessary to have a high input

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers