Q 400 BL4 Search Results

Contextual Info: S ocke ts, non-insulated - 2 - 100 mm dia. Socket BL.N with external metric thread BL.N BL2N* 2 02.0001 M8x0.75 16.5 1.5 1.5 BL3N* 02.0002 M8X0.75 3 16.5 1.5 1.5 4 BL4N 02.0003 M8x0.75 19.5 1.5 1.5 BL5N 02.0004 M10x1 5 19.5 2 1.5 BL6N 19.5 2 02.0005 M12x1

Contextual Info: 7 4 B b 3 4 b G 0 Q G 7 b ci bl4 • RCD ACTIVE DIGITAL DELAY LINES SERIES A01 - SINGLE DELAY SERIES A03 - TRIPLE DELAY ■ ■ ■ ■ ■ Economical cost, prompt delivery! Wide varieties of values, 10nS to 500nS TTL compatible Operating temperature: 0 °C to 7 0°C

240-PIN

Abstract: DDR3-1066 DDR3-1333 PC3-10600
Contextual Info: Product Specifications PART NO.: VL33B1K69E-K9S/F8S/E7S REV: 1.0 General Information 8GB 1G x 72 DDR3 SDRAM VLP ECC RDIMM 240-PIN Description The VL33B1K69E is a 1G x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen stacked CMOS 512M x 8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages, a 28-bit registered

CY7C1263V18

Abstract: EP3SL150F1152C2 Verilog DDR3 memory model
Contextual Info: AN 461: Design Guidelines for Implementing QDRII+ and QDRII SRAM Interfaces in Stratix III and Stratix IV Devices February 2010, v1.2 QDRII+ and the QDRII SRAM devices are ideally suited for bandwidth– intensive and low-latency applications such as controller buffer memory, look-up tables LUTs ,

E1 3005-2

Abstract: rda 1846
Contextual Info: Product Specifications REV: 1.0 VL33B1K60A-K9S/F8S/E7S PART NO: General Information 8GB 1GX72 DDR3 SDRAM ECC 240 PIN RDIMM Description: The VL33B1K60A is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module consists of thirty-six CMOS 512Mx4 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL

Contextual Info: Product Specifications PART NO: REV: 1.0 VL33B5160A-K9S/F8S/E7S General Information 4GB 512MX72 DDR3 SDRAM ECC 240 PIN RDIMM Description: The VL33B5160A is a 512Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of thirtysix CMOS 256Mx4 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/

E1 3005-2

Abstract: DDR3 DIMM 240 pinout PC3-10600 k193d
Contextual Info: Product Specifications PART NO: REV: 1.0 VL33B5160A-K9S/F8S/E7S General Information 4GB 512MX72 DDR3 SDRAM ECC 240 PIN RDIMM Description: The VL33B5160A is a 512Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of thirtysix CMOS 256Mx4 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/

rda 1846

Abstract: PC3-10600
Contextual Info: Product Specifications PART NO: REV: 1.0 VL33B1K60A-K9S/F8S/E7S General Information 8GB 1GX72 DDR3 SDRAM ECC 240 PIN RDIMM Description: The VL33B1K60A is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module consists of thirty-six CMOS 512Mx4 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL

BL4054

Abstract: BL4054-42 TSOT23-5 circuit diagram for 24V automatic battery charger BAT53 marking CA sot23-5 li-ion battery protection ic 2 cell Li-ion single charger SOT-26
Contextual Info: BL4054 800mA Standalone Linear Li-Ion Battery Charger with Thermal Regulation in Thin SOT FEATURES z z z z z z z z z z z z z z DESCRIPTION Programmable Charge Current Up to 800mA No MOSFET, Sense Resistor or Blocking Diode Required Preset 4.2V Charge Voltage with ±1%

Contextual Info: Product Specifications PART NO.: VL33B5263F-K9S/F8S/E7S REV: 1.1 General Information 4GB 512M x 72 DDR3 SDRAM ULP ECC 240-PIN RDIMM Description The VL33B5263F is a 512M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 256M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock

240-PIN

Abstract: DDR3-1066 DDR3-1333 PC3-10600 rdimm thermal samsung samsung DDR3 SDRAM 2GB
Contextual Info: Product Specifications PART NO.: VL33B5263F-K9S/F8S/E7S REV: 1.1 General Information 4GB 512M x 72 DDR3 SDRAM ULP ECC 240-PIN RDIMM Description The VL33B5263F is a 512M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 256M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock

240-PIN

Abstract: DDR3-1066 DDR3-1333 PC3-10600 DDR3 RDIMM samsung samsung DDR3 SDRAM 2GB
Contextual Info: Product Specifications PART NO.: VL33B5663F-K9S/F8S/E7S REV: 1.1 General Information 2GB 256M x 72 DDR3 SDRAM ULP ECC 240-PIN RDIMM Description The VL33B5663F is a 256M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 128M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock in BGA

Contextual Info: * ENHANCED DIFFERENTIAL RECEIVER SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • 3.3V and 5V power supply options ■ 250ps propagation delay ■ Very high voltage gain vs. standard EL16 ■ Ideal for Pulse A m plifier and Lim iting Am plifier applications

Contextual Info: Product Specifications PART NO.: VL33B5663F-K9S/F8S/E7S REV: 1.1 General Information 2GB 256M x 72 DDR3 SDRAM ULP ECC 240-PIN RDIMM Description The VL33B5663F is a 256M x 72 DDR3 SDRAM high density RDIMM. This memory module consists of eighteen CMOS 128M x 8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/PLL clock in BGA

Contextual Info: PRELIMINARY DATA S H E E T , b, 27s2s 0DSQQD1 77S -NEC| NEC BIPOLAR ANALOG INTEGRATED C IR C U IT ELECTRON DEVICE ¿¿PC1860 BURST LOCK CLOCK GENERATOR The #iPC1860 is an LSI incorporating a P L L circuit to generate nfsc clocks fsc: color subcarrier frequency , ideal for the

automatic battery charger circuit diagram

Contextual Info: BL4054/BL4054B 800mA Standalone Linear Li-Ion Battery Charger with Thermal Regulation in SOT23-5/TSOT23-5 resistor is needed, and no blocking diode is required due to the internal MOSFET architecture. Thermal feedback regulates the charge current to limit the die temperature during high power

Contextual Info: FF 200 R 06 KF 3 Transistor Transistor Therm ische Eigenschaften Therm al properties 0,07 DC, pro Baustein / per moduie RthJC 0,14 DC, pro Z w e ig /p e r arm 0,03 pro Baustein / per moduie RthCK 0,06 pro Zweig / per arm Elektrische Eigenschaften Electrical properties

IRF150 MOSFET AMP circuit

Abstract: forsythe MOSFET IRF150 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly IRF9130 R. Severns "Controlling Oscillation in AN942 irf150
Contextual Info: Paralleling Of Power MOSFETs For Higher Power Output James B. Forsythe, Member IEEE International Rectifier, E1 Segundo, California Abstract - Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel MOSFET branches are mapped over wide operating ranges. Unbalance generator magnitudes are given

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

Contextual Info: Low Power Video Op Amp with Disable AD810 ANALO G D EVIC ES □ FEATURES High Speed SO MHz Bandwidth 3 dB, G = +1 75 MHz Bandwidth {3 dB, G = +2) 1000 V /|is Slew Rate 50 ns Settling Time to 0.1% (VQ = 10 V Step) Ideal for Video Applications 30 MHz Bandwidth (0.1 dB, G = +2)

FF450R17ME3

Contextual Info: Technische Information / technical information FF450R17ME3 IGBT-Module IGBT-modules EconoDUAL 3 Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoDUAL™3 module with trench/fieldstop IGBT³ and EmCon3 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data

Contextual Info: FF 200 R 06 KF 3 Transistor Transistor Therm ische Eigenschaften Therm al properties 0,07 DC, pro Baustein / per moduie RthJC 0,14 DC, pro Z w e ig /p e r arm 0,03 pro Baustein / per moduie RthCK 0,06 pro Zweig / per arm Elektrische Eigenschaften Electrical properties

FZ400R17KE3

Contextual Info: Technische Information / technical information FZ400R17KE3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT³ und EmCon³ Diode 62mm C-series module with trench/fieldstop IGBT³ and EmCon³ diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data

AD810

Abstract: AD810A DIP65
Contextual Info: Low Power Video Op Amp with Disable ANALOG DEVICES AD810 FEATURES High Speed SO MHz Bandwidth 3 dB, G = +1 75 MHz Bandwidth {3 dB, G = +2) 1000 V /(is Slew Rate 50 ns Settling Time to 0.1% (V0 = 10 V Step) Ideal for Video Applications 30 MHz Bandwidth (0.1 dB, G = +2)