Q027 Search Results

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D Philips Semiconductors_ bbS3^31 Q027344 227 « A P X _ Product specification ’Hi-Com’ triac BTA212-B series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated 12 A triacs designed to be used in motor

5D-11

Abstract: 00SC
Contextual Info: ADV MI CRO 14E MEMORY D I □257520 Q02744G 4 | M u H jjS Am27C2048 Advanced Micro Devices 131,072 x 16-Bit C M O S U V E P R O M DISTINCTIVE CHARACTERISTICS Fast access time — 100 ns Low power consumption: - 100 ftA maximum standby current Programming voltage: 12.5 V

BTW42

Abstract: BTW42-600RC 800R BTW38 BTW42-600R
Contextual Info: N AUER PHILIPS/DISCRETE ^53^31 b'lE J> Q0273bb 'H ß H A P X BTW42 SERIES L THYRISTORS Glass-passivated silico n th y ris to rs in metal envelopes w ith high d V [ j/ d t capabilities. T he y are Intended fo r use in pow er c o n tro l c irc u its and sw itching systems w here high transients can occur e.g. phase

Contextual Info: ADV M IC RO A m MEMORY IME d | 0ES75SÔ Q027S45 7 £ 1 Advanced Micro Devices 2 1 4 7 / A m 21 L 4 7 4096x1 Static RAM DISTINCTIVE C H A RA CTERISTICS • High speed — access times down to 35 ns maximum • Automatic power-down when deselected • Low power dissipation

BC337A

Contextual Info: D BC337 BC337A BC338 ^ 5 3 ^ 3 1 Q027530 5T4 H A P X N AUER PHILIPS/DISCRETE _ / V _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers.

ST27256-25CP

Abstract: DIP-28 T-46 Z8000 S-7576 ST27256-20CP
Contextual Info: 7 'IB5B37 Q027HSB 1 • Z f l SCS-THOMSON BMOD^HUgCTùlìWn^ ST27256P S G S-THOMSON 3GE » 256K 32Kx 8 NMOS ONE TIME PROGRAMMABLE ROM ■ FAST ACCESS TIME: 170ns ■ ■ ■ ■ ■ 0 to +70°C STANDARD TEMP. RANGE SINGLE +5V POWER SUPPLY ±10% V cc TOLERANCE AVAILABLE

TC528257

Abstract: n724
Contextual Info: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The

L718

Contextual Info: VNDN1 DIE N-Channel Enhancement-Mode MOS Transistor V N D N 1C H P * TN2460L TN2460T Gate Pad 0.0038 ‘ Meets or exceeds specification for all part numbers listed below : Q-027 0 . 686 For additional design information please consult the typical performance curves VNDN24.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FW7555M

Abstract: 7555M MPP15M Q02747
Contextual Info: LIEFERVORSCHRIFT SPECIFICATION FRIWO FRIWO Gerätebau GmbH V o n -Lieb ig -Str. 11 D-48346 Ostbevern Tel.: 02532/81-0 Fax: 02532/81-112 h ttp ://w w w .friwo.de MPP15 M - 5V Firmo / Compony Distribution Ge r ät e ty p / Typ FW7555M/05 Artikel-Nr. / Order-No.

Contextual Info: Integrated Device Technology, Inc. CMOS Sync BiFlFO With Bus-Matching 256x36x2, 512x36x2, 1,024x36x2 PRELIMINARY IDT723624 IDT723634 IDT723644 NOTE: There is an errata notice on the last page and the corrections have not been incorporated into this document.

14L4

Abstract: 10l8 12L6 12H6 16c1 4511 logic diagram 1117 L schematic diagram PAL14L pin shourd PAL10H8
Contextual Info: ADV MICRO PLA/PL E/ ARR AY S =ib U2 b7526 ADV MICRO P L A / P L E / ARRAYS D E | 055755b 0057114 7 96D 27114 D T-V6-/3-V7 Combinatorial PALI 0H8 Series 1 0 H 8 , 1 2 H 6 , 1 4 H 4 , 1 6 H 2 1 6 C 1 1 0 L 8 , 1 2 L 6 , 1 4 L 4 - , 1 6 L 2 Ordering Information

Contextual Info: • 1 7 3 1 3 bS G 0 5 7 G 3 3 bSi H t : For Immediate Assistance, Contact Your Local Salesperson B U R R -BR O W N H OPA129 Ultra-Low Bias Current DifeP OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • ULTRA-LOW BIAS CURRENT: 10OTA max

Contextual Info: HM51W17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30,1996 Description The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word X 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805B offers

Contextual Info: B U R R -B R O W N « E OPA627 OPA637 1 Precision High-Speed DIM OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS • VERY LOW NOISE: 4.5nV/VHz at 10kHz • PRECISION INSTRUMENTATION • FAST DATA ACQUISITION • FAST SETTLING TIME: OPA627—550ns to 0.01% OPA637—450ns to 0.01%

Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP87CM36 CMOS 8-BIT MICROCONTROLLER TMP87CM36N The 87CM36 is the high speed and high performance 8-bit single chip microcomputer. This MCU contains CPU core, ROM, RAM, input/output ports, six multi-function timer/counter, serial bus interface, on-screen

Q0465

Abstract: PLC Communication cables pin diagram fanuc 90-30 plc internal cpu wiring diagram fanuc q0265 plc 90-30 CMM311 fanuc ge PLC Communication cables pin diagram Q0260 for plc internal cpu wiring diagram ge fanuc cpu 331
Contextual Info: Du line Dupline Plug & Play Master Module Interface for GE-Fanuc PLC Type G 3496 0002 ® Fieldbus Installationbus • GE-Fanuc master • Plug and play: Automatic communication with specific PLC/Controllers • Built-in normal Dupline® Channel Generator

W2465AK15

Contextual Info: W2465A fi nbond Electronics Corp. 8K X 8 HIGH-SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W2465A is a high-speed, low-power CMOS static RAM organized as 8192 x 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond’s high performance

Contextual Info: P ^ ^ jl G E C S L M I C . o c to b e r 1996 P L E S S E Y O t N D U C T O R S DS4374 - 2.4 GP2015 GLOBAL POSITIONING SYSTEM RECEIVER RF FRONT END Supersedes edition in August 1996 Global Positioning Products Handbook, HB4305-1.0 The GP2015 is a small format RF Front-end for Global

Contextual Info: Bulletin 125174/A International S R e c t if ie r ST223C.C s e rie s INVERTER GRADE THYRISTORS Hockey Puk Version Features • M etal case w ith ceram ic insulator ■ International standard case T 0 -2 0 0 A B A-PUK ■ A ll diffused design ■ C enter am plifying gate

Contextual Info: Bulletin 125160/B International Rectifier ST280CH.C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features • 500A C en ter am plifying gate ■ M e tal case with ceram ic insulator ■ International standard ca se T O -2 0 0 A B A -P U K ■ E xtended te m p erature range

Contextual Info: N AUER PHILIPS/DISCRETE bTE ]> • bbsa'm 005770^ asb APX Bh92b JV SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and u.h.f. tuners. QUICK REFERENCE DATA Collector-base voltage open emitter

bc177

Contextual Info: | N AMER PHILIPS/DISCRETE b'lE D bb53T31 Q0S7513 415 H A P X BC177 to 179 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes with the collector connected to the case. The BC177 is a high-voltage type and primarily intended for use in driver stages of audio amplifiers

BSS61

Contextual Info: N AMER PHILIPS/DISCRETE b^E D bbS3^31 0D2?flbM bET • APX EJSS60 to b 'Z A P-N-P DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving.