Q0D37 Search Results

Contextual Info: sanyo s e m ic o n d u c t o r corp ~ 1 2 E D | 7 cH 7 Q 7 L i OOOSOb'J r ' 3 3 - I S NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1222C Features: • High Breakdown Voltage and High Reliability.

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

2sb1303

Contextual Info: SANYO SEMICONDUCTOR ' CORP 1EE II | 7 1 1 7 0 71 1 O M S im T -il' £>l S S 2 S B 1 2 3 1 / 2 S D 1 841 S S 2 S B 1 3 2 5 /2 S D 1 999 Complementary Pair Silicon Transistors Complementary Pair Silicon Transistors Low Saturation Voltage Amp Applications Motor Driver Applications

2SC3173

Contextual Info: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V

2SD439

Abstract: 2SB559 transistor af 126 JIS G 3201
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE D I 7 cH 7 G 7 b □ □ □ 3CIÛ2 S T - 3i-n 2SB559 PNP/ npn Epitaxial Planar Silicon Transistors 2009A Low Frequency Power Amp, Medium Speed Switching Applications 2SD439 372E Features . Large allowable collector dissipation and wide ASO.

Contextual Info: IBM11D1365E IBM11D2365E 1M/2M x 36 DRAM Module Features 72-Pin Single-In-Line Memory Module Performance: -60 High Performance C M O S process Single 5V, ± 0.5V Power Supply All inputs & outputs are fully TTL & C M O S compatible Low active current dissipation

wj 5 77

Abstract: 2SC3985 DDD3710 PA 2027A a 1201 sanyo
Contextual Info: SA N Y O SEMICONDUCTOR CORP r-3 3-, 2SC3985 2041 N P N P l a n a r S i l i c o n D a r li n g t o n T r a n s i s t o r Driver Applications 2218A Use . Switching of L load motor driver, printer hammer driver, relay driver Features . High DC current gain

mpc 1237

Abstract: transistor 2sd 511 transistor d325 TRANSISTOR C875 c537 transistor 2SD325 2SC693 2SC536D 2SC693E 2SB511
Contextual Info: SANYO SEMICONDUCTOR CORP 1BE D I TTTTDTh Q G 0 H 0 ci3 T-'is-Op 2SD325 N P N / pnp Triple Diffused Planar Silicon Transistors 201OA Low Frequency Power Amp Applications 2SB511 398F 5 Watts AF Power amplifier output use. There are complementary pair. :2SB511

KED24502HB

Abstract: ke721k03 KEF24503HB KE721K03HB kd2245 KD224505HB KS624550 KD224503HB KE721203 KE721203HB
Contextual Info: 31Z D POUEREX INC 'Z Q W E n E X • 75^21 0003720 4 « P R X r - 33-01 _ High-Beta Transistor Modules Selector Guide Powerex through cooperative efforts with its business partner Mitsubishi Electric is proud to present continued

2SA1210

Abstract: 2SC2912 P33-07 A1210 la 1201 sanyo TO-220AA transistor BC 536
Contextual Info: SANYO SEMICONDUCTOR CORP IE E D I 7 cH 7 0 7 b T - a - c n 2SC2912 NPN /pnp Epitaxial Planar Silicon Transistors 200 9A High Voltage Switching, AF 1 5 0 W Predriver Applications 2SA1210 780C Features • Adoption o f FBET process • High breakdown voltage

d331 npn transistor

Abstract: D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE 2SD330, 331 2SB514, 515 0004^05 Triple Diffused Planar Silicon Transistors N P N / pn p 2012 201OA D | _ 7 en 7 G 7 b Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ­

T35W

Abstract: transistor BC 543 transistor Bc 542 transistor bc 207 npn ako 544 126 2SC2998 922B knitter 34
Contextual Info: SANYO SEMICONDUCTOR 2SC2998 CORP 1EE I D 1 7Ti707ti ~r-3s-i3> 2003A N P N Ep itaxial P la n a r S ilic o n T ra n sisto r High Speed Sw itching a _ i : _ 922B Features . Fast switching speed. . High breakdown voltage. Absolute Maxiaui Ratings at Ta:25°C

TRANSISTOR b1181

Abstract: B1181 2SD1912 sanyo 1 knitter 34
Contextual Info: LEE D I SANYO SEMICONDUCTOR CORP 2SD1912 7^ 70?^ t QDDSBB1 4 J “ - 3 3 - ^ 7 NPN Epitaxial Planar Silicon Transistor 201OA Low Frequency Power Amp Applications Features . Wide ASO adoption of MBIT process . Low saturation voltage . High reliability Absolute H a i l n Ratings at Ta=25°C

marking C5K

Abstract: 2SD1656 ic sj 2038 sj 2025 sj 2038 DDD3710
Contextual Info: SA NY O SEMICONDUCTOR CORP IS E D I 7 cn 7 0 ? b O O D S I S I S |~~ T-sa-ii 2SD1656 NPN Triple Diffused Planar Silicon Transistor 2039 Color TV Horizontal Deflection Output Applications 17548 Applications . High-voltage, power switching Features . Fast speed tfinaxrO.lfus .

4227t

Abstract: 2043A TRANSISTOR R 2453
Contextual Info: SANYO SEMICONDUCTOR CORP 2SD1914 NPN Epitaxial Planar Silico n Darlington Transistor 204 3 A - Driver Applications . 2453 Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection . High DC current gain

2SD1651

Contextual Info: SANYO SEMICONDUCTOR 1EE CORP D I TW OTh r - s 3 - v/ 2SD1651 N PN Triple Diffused Planar Silicon Transistor 2039 1749B 00DS13b Color TV Horizontal Deflection Output Applications with Damper Diode Applications . High-voltage, power switching Features . Fast speed (tfmax=0.4us).

Contextual Info: SANYO S E M IC O N D U C T O R 1 SE CORP D | 7 T=i7 D 7 tx 0 0 D 4 7 flQ T |~ T -33-^^ 2SC4005 2041 NPN Planar Silicon Darlington Transistor Driver Applications 2271A Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers

2SA1210

Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
Contextual Info: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage

a 1757 transistor

Abstract: ti 8ak JIS G3141 2SC1755 2SC1756 2SC1757 transistors a 1757 a 1201 sanyo
Contextual Info: SANYO SEMICONDUCTOR 1EE CORP D I 7^707^ □ □ □ 4 1 4 5 5 | T - Z Z - O V 1756 , 1757 2010A 2013 2012 NPN Triple Diffused Planar Silico n Transistors TV Chroma Output, Video Output, Sound Output Applications 4290 These 2SC1755,1756,1757 are different only from their packages.

2SD1651

Abstract: b1181 TG 2039 transistor 2sd1651 power transistor 2sd1651 2SC2271 KT 2056 transistor bc 207 npn transistor 2SC2271 2039 transistor
Contextual Info: SANYO SEMI CONDUCTOR 1EE CORP D I TW OTh 00DS13b r - s 3 - v/ 2SD1651 N PN Triple Diffused Planar Silicon Transistor 2039 1749B Color TV Horizontal Deflection Output Applications with Damper Diode Applications . High-voltage, power switching Features . Fast speed (tfmax=0.4us).

TRANSISTOR b1181

Abstract: 2SD1649 SANYO KOGYO JIS B1181 LA78 U5DR sanyo transistor T03-PML
Contextual Info: SANYO SEMICONDUCTOR 1EE D | CORP 7T17Q7t. GQOSIBD •T-S3-U 2SD1649 - NPN Triple Diffused Planar S ilicon Transistor 2039 Color TV Horizontal Deflection Output Applicationsfwith Damper Diode 1755B Applications . High-voltage, power switching Features . Fast speed tfmax=0.4us).

BU508B

Abstract: BU508A SANYO
Contextual Info: SANYO SEMICONDUCTOR CORP BU508, 508A 12 E D ^ 7 ^ 707^ 0005401 r - 3 3 -// NPN Triple D iffused Planar Silicon Transistors 2022 Horizontal Output Applications Absolut« Kazlaia Batlngs at Ta=25°C Collector to Base Voltage CBO Collector to Emitter Voltage

2042A

Contextual Info: SANYO SEMICONDUCTOR 12E D1 ?117Q7k UQ04Q7S T CORP T -3 3 -J7 2SB1144 P N P / npn Epitaxial Planar Silico n Transistors 2042A 2SD1684 2041A Low Frequency Power Ampf Medium Speed Switching Applications Features . Adoption of FBET, MBIT processes . High breakdown voltage and large current capacity

Contextual Info: SIE » • fll3bt.71 QGQ37SÖ 31Ô M S E K G sëmîkroO pk - Maximum Ratings Symbol VcEVsus Values I Units 1000 CVJ > [ II LU CQ > VcEV Conditions lc = 1 A, Vbe = - 2 V j V 1000 V 1000 V V VcBO Ie = 0 V ebo lc = 0 7 lc D. C. 50 A 100 = 1 ms Tvj - 4 0 . . . + 150