Q62702A1270 Search Results

Contextual Info: SIEMENS BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss EHA0702D Type Marking Ordering Code Pin Configuration BAR 81W BBs 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343

81W MARKING CODE

Abstract: Q62702A1270 marking code 7G
Contextual Info: SIEMENS BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss IN - — - W » EHA07023 BAR 81W BBs 1 = A1 2 = C2 Q62702-A1270 Package eg Pin Configuration

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

A1270

Abstract: transistor A1270 A1270 transistor datasheet 81W MARKING CODE a1270* transistor Q62702-A1270 marking 81W
Contextual Info: BAR 81W Silicon RF Switching Diode Preliminary data 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VPS05605 Type Marking Ordering Code Pin Configuration BAR 81W BBs 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343