Q65111A23 Search Results
Q65111A23 Price and Stock
ams OSRAM Group Q65111A2362Phototransistors PHOTOTRANSISTOR (ALS) SMT CHIPLED |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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Q65111A2362 | Reel | 6,000 |
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Q65111A2362 | Reel | 60 | 1 |
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ams OSRAM Group Q65111A2395Infrared Emitters IR Emitter, 850nm |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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Q65111A2395 | Reel | 4,000 |
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Q65111A23 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2012-01-19 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4257R Features: • • • • Besondere Merkmale: Infrared LED with high power output Peak wavelength typ. 850 nm Black coloured TOPLED-package |
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4257R D-93055 | |
Contextual Info: 2014-02-12 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 SFH 4257R Features: • • • • Besondere Merkmale: Infrared LED with high power output Peak wavelength typ. 850 nm Black coloured TOPLED-package |
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4257R D-93055 | |
Contextual Info: 2014-01-09 OSLON Black Series 850 nm Version 1.2 SFH 4715 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 11 K/W) Centroid wavelength 850 nm ESD safe up to 2 kV acc. to ANSI/ESDA/JEDEC JS-001-HBM, Class 2 |
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JS-001-HBM, AEC-Q101-REV-C, JS-001- D-93055 | |
Contextual Info: 2012-05-21 OSLON Signal 80 Datasheet Version 1.1 LV CK7P Features: • Package: SMD ceramic package with silicon Besondere Merkmale: • Gehäusetyp: SMD Keramik Gehäuse mit Silikonverguss und Linse • Technologie: ThinGaN • Farbe: verde grün 505 nm |
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JESD22-A114-F 16mm2 D-93055 | |
Contextual Info: 2012-04-02 OSRAM OSTAR Projection Compact Datasheet Version 2.0 LE B Q9WM Compact light source in SMT technology, glass window on top, RoHS compliant Kompakte Lichtquelle in SMT Technologie, Abdeckung mit Glasfenster, RoHS konform Features: • Package: compact lightsource in SMT |
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JESD22-A114-F 16mm2 D-93055 | |
Contextual Info: 2013-11-30 DURIS P 5 Datasheet Version 1.2 GW DASPA1.EC High-efficacy mid-power LED with long lifetimes also at high currents and high junction temperatures. Hocheffiziente LED mittlerer Leistungsklasse mit langer Lebensdauer auch bei hohen Strömen und |
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LM-80 D-93055 | |
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung Infrared Emitter (850 nm) with high power output Lead (Pb) Free Product - RoHS Compliant SFH 4257 R Wesentliche Merkmale Features • • • • • • • • Infrarot LED mit hoher Ausgangsleistung |
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Q9WN-2U2V-24
Abstract: LE T Q9WN
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JESD22-A114-F D-93055 Q9WN-2U2V-24 LE T Q9WN | |
Contextual Info: DURIS P 5 Data Sheet Version 1.1 GW DASPA1.EC High-efficacy mid-power LED with long lifetimes also at high currents and high junction temperatures Hocheffiziente mid-power LED mit langer Lebensdauer auch bei hohen Strömen und hohen Sperrschichttemperaturen |
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L70/B50) LM-80 | |
Contextual Info: 2013-09-16 OSLON Black Series 850 nm Version 1.1 SFH 4715 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 11 K/W) Centroid wavelength 850 nm ESD safe up to 2 kV acc. to ANSI/ESDA/JEDEC JS-001-HBM, Class 2 |
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JS-001-HBM, AEC-Q101-REV-C, JS-001- D-93055 | |
PL TB450
Abstract: PLTB450 TO56 package Wavelength 450nm laser diode to56 to56 laserdioden TB-450 to56 laser TB450
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TB450 450nm PL TB450 PLTB450 TO56 package Wavelength 450nm laser diode to56 to56 laserdioden TB-450 to56 laser | |
Q65111A23
Abstract: DASP Q65111A2350 Q65111A2353 osram duris
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D-93055 Q65111A23 DASP Q65111A2350 Q65111A2353 osram duris | |
Contextual Info: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3711 Wesentliche Merkmale Features • Sehr kleines SMT Gehäuse • Gut angepasst an Augenempfindlichkeit (Vλ) • Empfindlichkeit im IR Bereich (λ>750nm) <1% |
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750nm) | |
Contextual Info: 2012-08-17 Silicon NPN Phototransistor with Vλ Characteristics NPN-Silizium-Fototransistor mit Vλ Charakteristik Version 1.0 SFH 3711 Features: Besondere Merkmale: • Spectral range of sensitivity: 470 . 670 nm • Spektraler Bereich der Fotoempfindlichkeit: |
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750nm) D-93055 | |
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SFH4715
Abstract: SFH4715S
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JS-001-2011 AEC-Q101-REV-C, D-93055 SFH4715 SFH4715S |