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Text: 2012-01-19 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4257R Features: • • • • Besondere Merkmale: Infrared LED with high power output Peak wavelength typ. 850 nm Black coloured TOPLED-package
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4257R
D-93055
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Untitled
Abstract: No abstract text available
Text: 2014-02-12 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 SFH 4257R Features: • • • • Besondere Merkmale: Infrared LED with high power output Peak wavelength typ. 850 nm Black coloured TOPLED-package
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4257R
D-93055
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Untitled
Abstract: No abstract text available
Text: 2014-01-09 OSLON Black Series 850 nm Version 1.2 SFH 4715 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 11 K/W) Centroid wavelength 850 nm ESD safe up to 2 kV acc. to ANSI/ESDA/JEDEC JS-001-HBM, Class 2
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JS-001-HBM,
AEC-Q101-REV-C,
JS-001-
D-93055
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Untitled
Abstract: No abstract text available
Text: 2012-05-21 OSLON Signal 80 Datasheet Version 1.1 LV CK7P Features: • Package: SMD ceramic package with silicon Besondere Merkmale: • Gehäusetyp: SMD Keramik Gehäuse mit Silikonverguss und Linse • Technologie: ThinGaN • Farbe: verde grün 505 nm
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JESD22-A114-F
16mm2
D-93055
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Untitled
Abstract: No abstract text available
Text: 2012-04-02 OSRAM OSTAR Projection Compact Datasheet Version 2.0 LE B Q9WM Compact light source in SMT technology, glass window on top, RoHS compliant Kompakte Lichtquelle in SMT Technologie, Abdeckung mit Glasfenster, RoHS konform Features: • Package: compact lightsource in SMT
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JESD22-A114-F
16mm2
D-93055
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Untitled
Abstract: No abstract text available
Text: 2013-11-30 DURIS P 5 Datasheet Version 1.2 GW DASPA1.EC High-efficacy mid-power LED with long lifetimes also at high currents and high junction temperatures. Hocheffiziente LED mittlerer Leistungsklasse mit langer Lebensdauer auch bei hohen Strömen und
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LM-80
D-93055
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung Infrared Emitter (850 nm) with high power output Lead (Pb) Free Product - RoHS Compliant SFH 4257 R Wesentliche Merkmale Features • • • • • • • • Infrarot LED mit hoher Ausgangsleistung
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Q9WN-2U2V-24
Abstract: LE T Q9WN
Text: 2012-06-22 OSRAM OSTAR Projection Compact Datasheet Version 2.0 LE B Q9WN Compact light source in SMT technology, glass window on top, RoHS compliant Kompakte Lichtquelle in SMT Technologie, Abdeckung mit Glasfenster, RoHS konform Features: Besondere Merkmale:
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JESD22-A114-F
D-93055
Q9WN-2U2V-24
LE T Q9WN
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Untitled
Abstract: No abstract text available
Text: DURIS P 5 Data Sheet Version 1.1 GW DASPA1.EC High-efficacy mid-power LED with long lifetimes also at high currents and high junction temperatures Hocheffiziente mid-power LED mit langer Lebensdauer auch bei hohen Strömen und hohen Sperrschichttemperaturen
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L70/B50)
LM-80
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Untitled
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Text: 2013-09-16 OSLON Black Series 850 nm Version 1.1 SFH 4715 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 11 K/W) Centroid wavelength 850 nm ESD safe up to 2 kV acc. to ANSI/ESDA/JEDEC JS-001-HBM, Class 2
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JS-001-HBM,
AEC-Q101-REV-C,
JS-001-
D-93055
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PL TB450
Abstract: PLTB450 TO56 package Wavelength 450nm laser diode to56 to56 laserdioden TB-450 to56 laser TB450
Text: Blaue Laser Diode 1.4 W in TO56 Bauform Blue Laser Diode 1.4 W in TO56 Package PL TB450 PRELIMINARY Besondere Merkmale Features • Typ. Emissionswellenlänge 450nm • Effiziente Strahlungsquelle für Dauerstrich- und gepulsten Betriebsmodus • TO56 Gehäuse
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TB450
450nm
PL TB450
PLTB450
TO56 package
Wavelength 450nm
laser diode to56
to56
laserdioden
TB-450
to56 laser
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Q65111A23
Abstract: DASP Q65111A2350 Q65111A2353 osram duris
Text: DURIS P 5 Data Sheet Version 0.0 GW DASPA1.EC Draft - This design is for Reference Subject to change High-efficacy mid-power LED with long lifetimes also at high currents and high junction temperatures and superior corrosion resistance Luminous flux: Hocheffiziente mid-power LED mit langer
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D-93055
Q65111A23
DASP
Q65111A2350
Q65111A2353
osram duris
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Untitled
Abstract: No abstract text available
Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3711 Wesentliche Merkmale Features • Sehr kleines SMT Gehäuse • Gut angepasst an Augenempfindlichkeit (Vλ) • Empfindlichkeit im IR Bereich (λ>750nm) <1%
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750nm)
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Abstract: No abstract text available
Text: 2012-08-17 Silicon NPN Phototransistor with Vλ Characteristics NPN-Silizium-Fototransistor mit Vλ Charakteristik Version 1.0 SFH 3711 Features: Besondere Merkmale: • Spectral range of sensitivity: 470 . 670 nm • Spektraler Bereich der Fotoempfindlichkeit:
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750nm)
D-93055
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SFH4715
Abstract: SFH4715S
Text: 2012-07-30 OSLON Black Series 850 nm Version 1.0 SFH 4715 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 11 K/W) Centroid wavelength 850 nm ESD safe up to 2 kV acc. to ANSI/ESDA/JEDEC JS-001-2011
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JS-001-2011
AEC-Q101-REV-C,
D-93055
SFH4715
SFH4715S
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