QEL 150 Search Results

HF 4069

Abstract: 7Z00 mc 4069 W1A 95 2X200 I960 wow300 amplificateur BF philips 4068 QEL 150
Contextual Info: PHILIPS QEL 2/250 £d > c V.H.F./U.H.F. TETRODE for use as H.F. amplifier, oscillator, frequency-multiplier and modulator at frequencies up to 500 Mc/s TETRODE V.H.F./U.H.F. pour utilisation en amplificatrice et oscillatrice H.F., multiplicatrice de fréquence et

QEL1

Contextual Info: HIGH " Q " TO R O ID AL INDUCTORS QE Series Ultra miniaturized with low height design. Exceptionally high "Q" and wide frequency range. Frequency range of QEL Series 1 to 300 kHz: QEM, 3 to 500 kHz. Accuracy, ±2%. fvtolued in epoxv resin with .020" x 2 ' tinea, copperweld leads,

QEL 150

Abstract: 2000-300-1 2x26 S300MC QEL1150 2X40
Contextual Info: PHILIPS OEL 1150 V.H.F./U.K.F. TETRODE for use as H.F. amplifier, oscillator, frequency-multiplier and modulator at frequencies u p to 500 Mc/s TETRODE V.H.F./U.H.F. pour utilisation en amplificatrice et oscillatrice H.F., multiplicatrice de fréquence et

ISPSD coolmos

Abstract: bup400d mosfet nepi
Contextual Info: Properties of the New Compensation Devices CoolMOS between 420K and 80K— the Ideal Device for Cryogenic Applications* A.E. Schlögl a), G. Deboy b), H.W. Lorenzen c), U. Linnert a), H.-J. Schulze a) and J.P. Stengl b) a) SIEMENS AG, Corporate Technology, Research Center Power Electronics, Otto-Hahn-Ring 6, 81730 Munich, Germany

Contextual Info: JL 11 12 8 10 SYMBOL DEFINITION MISSING SYMBOLS A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. H + 0.25 -0.15 TOTAL NO OF INSPECTIONS REQUIRED 17 LAST NO. USED 14

121-772

Contextual Info: 16 15 14 13 12 11 a 10 SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M DWG STATUS MISSING SYMBOLS DATE TOTAL NO OF INSPECTIONS REQUIRED NO MISSING SYMBOL

Contextual Info: SILICON MONOLITHIC Bi-CMOS INTEGRATED CIRCUIT TD6338P Bi-CMOS 10 BIT SERIAL-INPUT /PARALLEL OUTPUT DRIVER The TD6338P is an IC built using a B i-C M O S process characterized by high output w ithstand voltage. It contains a serial-input, 10-stage parallel-output shift

21S07A

Abstract: 2 microfarad 400v capacitor 4.7 microfarad capacitor
Contextual Info: A ACTIVE SCSI 2/3 TERMINATOR Pin Assignments Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ IPEC 21S07A PRELIMINARY CALIFORNIA MICRO DEVICES Fully backward compatible to the industry standard 2107 and 21S07A SCSI terminators Active termination for 9 SCSI signal lines

Contextual Info: QL12x16B WildCat 2000 Yery-High-Speed 2K 6K Gate CMOS FPGA Rev B pASIC HIGHLIGHTS .2000 usable gates, 88 I/O pins Very High Speed - ViaLink metal-to-metal programmable-via antifuse technology, allows counter speeds over 150 MHz and logic cell delays of under 2 ns.

CXP80116

Abstract: CSA8.00MT WD K1N RT03 SPC700
Contextual Info: SONY _C X P 8 0 1 16 CMOS 8-bit Single Chip Microcomputer_ | For the availability of this product, please contact the sales o fffif Description CXP80116 is a CMOS 8-bit microcomputer which consists of A / D converter, serial

PI0512WSN

Abstract: PI0128WSN 9 ELEMENT photoDIODE ARRAY PI0256WSN
Contextual Info: Peripheral Imaging Corporation PI0128WSN, PI0256WSN, PI0512WSN 50-mm-Pitch Wide Aperture Spectroscopic Photodiode Arrays Engineering Data Sheet Description Peripheral Imaging Corporation's WSN series is family of self-scanning photodiode solid-state linear imaging

KM416S1120A

Abstract: BQ763 A8GT BA831 BB141 POE-A MACH220 BQ23 BA1417 BA23
Contextual Info: /tm p _ n t/net/pri e / y a i r / B x x / f a d s / m - b r d / e n g / s c h / 1 .d n 17 MAR 97 17 :4 1 A Last u p d a t e : D 17 MAR 9 7 15:21 Ê A1 0 , A f 2 0 : 2 9 KM416S1120A KM416S1120A A0 A0 A1 A1 A2 A2 A3 A4 A5 A6 A7 AS GPL 0~ ) A9 A1 0 A1 1 WE0"

Contextual Info: •H Y UN D A I H Y 6 2 2 5 6 A S e r ie s 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

M74LS138P

Abstract: M74LS137P 20-PIN demultiplexer containing latch 1329T
Contextual Info: MITSUBISHI LSTTLs M74LS137P 3-LINE-TO -8-LINE DECODER/DEMULTIPLEXER W ITH ADDRESS LATCH DESCRIPTION The M 7 4L S 13 7P is a semiconductor integrated circuit con­ PIN CONFIGURATION TOP VIEW taining a 3-line-to-8-line decoder/m ultiplexer function w ith address latch.

intermediat

Abstract: capacitor 2D EIA-198 KKE0065-1 KKE0141-U KKE0148-H KKE0282-3 KKE0291-2 KKE0362-U-E material composition of chip capacitors
Contextual Info: Multilayer ceramic capacitors General technical information Date: October 2006 Data Sheet ã EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.

UCC2895

Abstract: OVERCURRENT LIMITING IN UCC3895 UCC3895 power supply application UCC3895
Contextual Info: UCC1895 UCC2895 UCC3895 UNITRO IDE BiCMOS Advanced Phase Shift PWM Controller PRELIMINARY FEATURES DESCRIPTION • Programmable Output Turn-on Delay The UCC3895 is a phase shift PWM controller that implements control of a full-bridge power stage by phase shifting the switching of one half-bridge

specification CECC 32100

Abstract: EIA198D EIA-198-D
Contextual Info: General Technical Information 1 Definition and construction 1.1 Introduction The term ceramic capacitors covers a large group of capacitors. Their properties may be quite different, but they all have the oxide ceramic dielectric in common. Ceramic generally means that an inorganic polycrystalline body is formed by sintering at high temperatures. By means of special production methods, extremely thin layers of ceramic materials can

Contextual Info: TO SH IBA TC55V400FT/TR/XB-70,-85,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V400FT/TR/XB is a 4,194,304-bit static random access memory SRAM organized as 262,144 words

B37979N

Abstract: B37979-G5102-J
Contextual Info: Multilayer ceramic capacitors Leaded, C0G Series/Type: Leaded C0G Date: February 2009 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

B37472

Abstract: epcos
Contextual Info: Multilayer ceramic capacitors Chip, X8R Series/Type: Chip Date: February 2009 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

epcos 1,0 nF B37941

Contextual Info: Multilayer ceramic capacitors Chip, MLSC, X7R Series/Type: Chip Date: February 2009 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: Multilayer ceramic capacitors Chip, HQF Series/Type: Chip Date: February 2009 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

B37472K5102K060

Abstract: B37472K5102K070 B37472K5152K060 B37472K5152K070 B37472K5222K060 B37472K5222K070 B37472K5332K060 B37472K5332K070 B37472K5472K060 B37472K5472K070
Contextual Info: Multilayer ceramic capacitors Chip, X8R Series/Type: Chip Date: February 2009 The following products presented in this data sheet are being withdrawn. Substitute Products: See www.epcos.com/withdrawal_mlcc Ordering Code B37541K5682K070 B37472K5102K060 B37472K5102K070

LM3909 equivalent

Abstract: transistor KJJ LM2925 LM3909 L4947 LM2926 LM2926T LM2927 LM2927T T05A
Contextual Info: a t i o n a l S e m i c o n d u c t o LM2926/LM2927 N r LM2926/LM2927 Low Dropout Regulator with Delayed Reset General Description The LM2926 is a 5V, 500 mA, low dropout regulator with delayed reset. The microprocessor reset flag is set low by thermal shutdown, short circuits, overvoltage conditions,