QL65 Search Results

650nm 5mw laser module

Abstract: 650NM laser diode 5mw QL65D6SA QSI 650 QL65
Contextual Info: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D6SA Signature of Approval Approvaed by Checked by Issued by Approval by Customer 315-9, Chunheung-ri, Sungger-eup, Chunan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65D6SA InGaAlP Laser Diode

Contextual Info: QL6500 Eclipse Data Sheet • • • • • • Combining Performance, Density and Embedded RAM 1.0 Device Highlights Flexible Programmable Logic • .25u, 5 layer metal CMOS Process Advanced Clock Network • 9 Global Clock Networks • 2.5 V Vcc, 2.5/3.3 V Drive Capable I/O

AA10

Abstract: AA13 AA15 QL6500 QL6500-4PS484C QL6500-4PT280C THL W8 BU20
Contextual Info: QL6500 Eclipse Data Sheet • • • • • • Combining Performance, Density and Embedded RAM Device Highlights Advanced Clock Network • Nine Global Clock Networks: Flexible Programmable Logic • 0.25 µm, Five layer metal CMOS Process • One Dedicated

QL65E7S_ABC

Contextual Info: QL65E7S-A/B/C 03.08.2010 ql65e7s_abc.doc 1 of 3 03.08.2010 ql65e7s_abc.doc 2 of 3 03.08.2010 ql65e7s_abc.doc 3 of 3

QL65I7SA

Contextual Info: QL65I7SA TECHNICAL DATA Red Laser Diode Features • • • • InGaAlP laser diode Peak Wavelength: 658 nm Optical Ouput Power: 30 mW Package: 5.6 mm, with Photo Diode Electrical Connection Pin Configuration Bottom View m-type PIN 1 2 3 Function LD Cathode

QL65D5SA

Abstract: 2 Wavelength Laser Diode Photo DIODE (any type) datasheet 650nm "Photo Diode" 650 DIODE 650nm 5mw laser 650NM laser diode 5mw laser diodes for optical source 6 pin laser diode
Contextual Info: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D5SA L Signature of Approval Approved by Checked by Issued by Approval by Customer QL65D5SA InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd 2002 ♦ OVERVIEW QL65D5SA is a MOCVD grown 650nm band InGaAlP laser diode with multi-quantum well structure.

QL65F6S_ABC

Contextual Info: QL65F6S-A/B/C 03.08.2010 ql65f6s_abc.doc 1 of 5 03.08.2010 ql65f6s_abc.doc 2 of 5 03.08.2010 ql65f6s_abc.doc 3 of 5 03.08.2010 ql65f6s_abc.doc 4 of 5 03.08.2010 ql65f6s_abc.doc 5 of 5

QL65L6S_ABC

Contextual Info: 03.08.2010 ql65l6s_abc.doc 1 of 3 03.08.2010 ql65l6s_abc.doc 2 of 3 03.08.2010 ql65l6s_abc.doc 3 of 3

Contextual Info: QL65J7SA TECHNICAL DATA Visible Laser Diode InGaAIP Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 660 nm Optical Ouput Power: 50 mW Package: 5.6 mm Electrical Connection Pin Configuration Bottom View n-type PIN 1 2 3 Function

QL65D6SA

Abstract: ql65d6
Contextual Info: QL65D6SA TECHNICAL DATA Red Laser Diode Features • • • • InGaAlP laser diode Peak Wavelength: 650 nm Optical Ouput Power: 5 mW Package: 5.6 mm, with Photo Diode Electrical Connection Pin Configuration Bottom View m-type PIN 1 2 3 Function LD Cathode

Contextual Info: QL6500 Eclipse Data Sheet • • • • • • Combining Performance, Density and Embedded RAM 1.0 Device Highlights Flexible Programmable Logic • .25u, 5 layer metal CMOS process Programmable I/O • High performance Enhanced I/O EIO : • 2.5 V Vcc, 2.5/3.3 V drive capable I/O

AA10

Abstract: PT280 QL6500 QL6500-4PS484C QL6500-4PT280C PS67
Contextual Info: QL6500 Eclipse Data Sheet • • • • • • Combining Performance, Density and Embedded RAM Device Highlights Advanced Clock Network • Nine Global Clock Networks: Flexible Programmable Logic • .25 µm, Five layer metal CMOS Process • One Dedicated

OPTICAL laser pickup

Abstract: 2 Wavelength Laser Diode bar code reader Laser Diode 10 pin QL65F6SA QL65 laser For Optical Pickup
Contextual Info: QL65F6SA InGaAlP Laser Diode 2003 Rev 0 ♦OVERVIEW QL65F6SA is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW and low operating current for optoelectronic devices such as Optical Pick-up & Bar Code Reader.

2 Wavelength Laser Diode

Abstract: QL65D5SA 650 DIODE 650-nm Laser Diode 10 pin Roithner-Laser QL65D5S
Contextual Info: QL65D5SA InGaAlP Laser Diode 2002 ♦ OVERVIEW QL65D5SA is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Pointer and Bar Code Reader.

Appnote60

Contextual Info: Eclipse Family Data Sheet • • • • • • Combining Performance, Density, and Embedded RAM Device Highlights Flexible Programmable Logic • 0.25 µ, 5 layer metal CMOS process • 2.5 V Vcc, 2.5/3.3 V dive capable I/O • Up to 4032 logic cells • Up to 583,000 max system gates

asynchronous fifo vhdl

Abstract: 8 BIT ALU design with verilog/vhdl code full subtractor using ic 74138 74139 for bcd to excess 3 code vhdl code for 8bit bcd to seven segment display 32 BIT ALU design with verilog/vhdl code 74594 16 BIT ALU design with verilog/vhdl code B1516 RAM1024
Contextual Info: QuickWorks User Manual with SpDE Reference Release 2009.2.1 Contact Information QuickLogic Corporation 1277 Orleans Drive Sunnyvale, CA 94089 Phone: (408) 990-4000 (US) (905) 940-4149 (Canada) +(44) 1932-57-9011 (Europe) +(852) 2567-5441 (Asia) E-mail: info@quicklogic.com

QL6325

Abstract: QL6250 QL6500 QL6600 40x24
Contextual Info: QuickSheet#8 Eclipse FPGA Family HIGH PERFORMANCE FPGAS WITH ENHANCED LOGIC SUPERCELL Eclipse Family Highlights l l l l l l The EclipseTM family of FPGAs offers a host of new system-level features ideal for telecommunications, networking, computing and test applications that

PQ208

Abstract: PT280 QL6250 QL6325 QL6500 QL6600 bga 484 0.8mm pitch
Contextual Info: Eclipse Family Data Sheet Eclipse: Combining Performance, Density, and Embedded RAM Updated 8/24/2000 Eclipse Family DEVICE HIGHLIGHTS Device Highlights Flexible Programmable Logic • .25u, 5 layer metal CMOS process ■ 2.5 V Vcc, 2.5/3.3 V drive capable I/O

high power laser diode price list

Abstract: 904nm
Contextual Info: ROITHNER LASERTECHNIK PRESENTS. NEW 405 nm LASER DIODES 405 nm laser diode, cw, price list page 1 RLT405-10MG, 405 +/- 10 nm, max. 20 mW, 75 °C, 5.6 mm, with photodiode DL-4146-301D, 410 +/- 5 nm, max. 20 mW, 60 °C, 5.6 mm, no photodiode NEW 405 nm LASERPOINTERS

Contextual Info: Eclipse Family Data Sheet • • • • • • Combining Performance, Density, and Embedded RAM Device Highlights Flexible Programmable Logic • 0.25 µm, 5 layer metal CMOS process • 2.5 V Vcc, 2.5/3.3 V dive capable I/O • Up to 4032 logic cells • Up to 583,000 max system gates

Contextual Info: 6N QL 9556B 656 SIQT 6N QL 955<B 65< QFDSJGJFQ RPFDJBLJRSR SFDINJDBL RPFDJGJDBSJONR OG RJLJDON QFDSJGJFQ UOLSBHF QBNHF 2 :5 kg 6555 Ugdkj DTQQFNS 2 635 Beh^i^ GFBSTQFR / / / / Ib`a i^dbZ[bdbkp Lgn d^ZcZ`^ Lgn _ginZi] mgdkZ`^ ]igh Ib`a \lii^fk \ZhZ[bdbkp B295:

AR5B91

Abstract: aspire MOTHERBOARD CIRCUIT diagram CNF7017 rt2700e wireless lan atheros AR5B91 atheros ar5b91 YEC YNV-W15 AD-7580S acer 5738 M780G
Contextual Info: Aspire 5738G/5738ZG/5738Z/5738/5338 Series Aspire 5536/5536G/5236 Series Service Guide Service guide files and updates are available on the ACER/CSD web; for more information, please refer to http://csd.acer.com.tw PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on Aspire 5738G/5738ZG/5738Z/5738/5338 and Aspire

B295

Contextual Info: 6N QL 9556B 656 SIQT 6N QL 955<B 65< DC COMPONENTS CO., LTD. QFDSJGJFQ RPFDJBLJRSR Q SFDINJDBL RPFDJGJDBSJONR OG RJLJDON QFDSJGJFQ UOLSBHF QBNHF 2 :5 kg 6555 Ugdkj DTQQFNS 2 635 Beh^i^ GFBSTQFR / / / / Ib`a i^dbZ[bdbkp Lgn d^ZcZ`^ Lgn _ginZi] mgdkZ`^ ]igh

4032 multiplexer

Contextual Info: Eclipse Family Data Sheet • • • • • • Combining Performance, Density and Embedded RAM 1.0 Device Highlights Flexible Programmable Logic • .25u, 5 layer metal CMOS process Programmable I/O • High performance Enhanced I/O EIO : • 2.5 V Vcc, 2.5/3.3 V drive capable I/O