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    Abstract: No abstract text available
    Text: N AUER PHILIPS/D ISCR ETE b'tE D bbS3^31 QQ30bRQ 417 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


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    PDF QQ30bRQ O220AB BUK456-800A/B BUK456 -800A -800B K456-800A bbS3T31 0030b84