QUAD DATA RATE SRAM IDT Search Results

QDR cypress

Abstract: QDR cypress burst of two Cypress QDR
Contextual Info: Quad Data RateTM SRAM QDRTM QDR RAMs and Quad Data Rate comprise a new family of products developed by Cypress Semiconductor, IDT, Inc. and Micron Technology 1 Evolution of Synchronous SRAM • PBSRAMs were designed for use as an L2 cache for processors – Optimized for long bursts of Reads or Writes

EP2S60

Contextual Info: Interfacing QDRTM-II SRAM with StratixTM, Stratix II and Stratix GX Devices AN4064 Introduction Synchronous static RAM SRAM architectures are evolving to support the highthroughput requirements of communications, networking, and digital signal processing (DSP) systems. The successor to Quad Data Rate (QDR™) SRAM,

FIFO36

Abstract: DWH-11 ISERDES ML561 mig ddr virtex XAPP853 iodelay CY7C1520JV18-300BZXC K7R643684M-FC30 DWL-11
Contextual Info: Application Note: Virtex-5 Family R XAPP853 v1.2 October 6, 2008 Summary QDR II SRAM Interface for Virtex-5 Devices Author: Lakshmi Gopalakrishnan This application note describes the implementation and timing details of a Quad Data Rate (QDR II) SRAM interface for Virtex -5 devices. The synthesizable reference design leverages

FIFO36

Abstract: K7R643684M-FC30 iodelay DWL-20 ML561 XAPP853 DWH-21 ISERDES BWH-01 Virtex-5 FPGA
Contextual Info: Application Note: Virtex-5 Family R XAPP853 v1.3 June 7, 2010 Summary QDR II SRAM Interface for Virtex-5 Devices Author: Lakshmi Gopalakrishnan This application note describes the implementation and timing details of a Quad Data Rate (QDR II) SRAM interface for Virtex -5 devices. The synthesizable reference design leverages

uPD44165084

Abstract: 9p marking
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT CMOS SYNCHRONOUS FAST SRAM QUAD DATA RATE 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364

E75 200

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT CMOS SYNCHRONOUS FAST SRAM QUAD DATA RATE 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362

qdr sram

Abstract: Cypress handbook CLK180 DDR400 XAPP259 XAPP262 XC2V1000 asynchronous fifo vhdl xilinx fifo xilinx cypress x26206
Contextual Info: Application Note: Virtex-II Series R Synthesizable QDR SRAM Interface Author: Olivier Despaux XAPP262 v2.6 August 29, 2003 Summary Quad Data Rate (QDR ) Synchronous Static RAM (SRAM) is one of the highest bandwidth solutions available for networking and telecommunications applications. This low-cost, highperformance solution is ideal for applications requiring memory buffering, traffic management,

burst sram 4000

Abstract: CY7C1314BV18 K7R323684M SRL16 UG070 XAPP703 xilinx mig user interface design
Contextual Info: Application Note: Virtex-4 Family R QDR II SRAM Interface for Virtex-4 Devices Author: Derek Curd XAPP703 v2.4 July 9, 2008 Summary This application note describes the implementation and timing details of a 2-word or 4-word burst Quad Data Rate (QDR II) SRAM interface for Virtex -4 devices. The synthesizable

CLK180

Abstract: DDR400 XAPP262 XC2V1000 SRAM controller SIGNAL PATH designer QDR pcb layout
Contextual Info: Application Note: Virtex-II Series R Synthesizable QDR SRAM Controller Author: Olivier Despaux XAPP262 v2.3 October 23, 2002 Summary Quad Data Rate (QDR ) Synchronous Static RAM (SRAM) is one of the highest bandwidth solutions available for networking and telecommunications applications. This low-cost, highperformance solution is ideal for applications requiring memory buffering, traffic management,

Signal Path Designer

Abstract: V20 NEC D61A3 NEC V20 hardware x26206 X26207 TN5401
Contextual Info: Application Note: Virtex-II Series R Synthesizable QDR SRAM Controller Author: Olivier Despaux XAPP262 v2.0 February 27, 2001 Summary Quad Data Rate (QDR ) Synchronous Static RAM (SRAM) is one of the highest bandwidth solutions available for networking and telecommunications applications. This low-cost, highperformance solution is ideal for applications requiring memory buffering, traffic management,

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

uPD44165082F5-E75-EQ1

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

uPD44165084

Abstract: uPD44165084F5-E40-EQ1
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

uPD44165084

Abstract: uPD44165084F5-E40-EQ1 uPD44165084F5-E50-EQ1
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

PD44165362

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The μPD44165082 is a 2,097,152-word by 8-bit, the μPD44165182 is a 1,048,576-word by 18-bit and the μPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full

uPD44165084

Abstract: uPD44165084F5-E30-EQ1 uPD44165084F5-E33-EQ1 uPD44165084F5-E40-EQ1 D18 D16 family nec
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

PD44325092

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44325082, 44325092, 44325182, 44325362 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION Description The μPD44325082 is a 4,194,304-word by 8-bit, the μPD44325092 is a 4,194,304-word by 9-bit, the μPD44325182 is a 2,097,152-word by 18-bit and the μPD44325362 is a 1,048,576-word by 36-bit synchronous quad data rate static RAM