UPD44165084 Search Results

Contextual Info: Datasheet PD44165084B-A μPD44165094B-A μPD44165184B-A μPD44165364B-A 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0018EJ0100 Rev.1.00 Dec 13, 2010 Description The μPD44165084B-A is a 2,097,152-word by 8-bit, the μPD44165094B-A is a 2,097,152-word by 9-bit, the

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

AM 5888

Abstract: SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442
Contextual Info: Through the latest technological advancements, we're developing new memory products to meet present and future needs. NEC Electronics is a market leader in memory products, continuously delivering products with the latest cutting-edge technology. Today, a new demand is

BGA15

Abstract: 72M-BIT samsung ddr quad data rate SRAM idt 150-NM
Contextual Info: 2009.9 2009.9 Ᏹߦᦨవ┵ࡔࡕ࡝⵾ຠࠍ㐿⊒ߒߡ߈ߚᛛⴚജࠍᵴ߆ߒ ᤨઍߩ࠾࡯࠭ߦวߞߚᣂߒ޿ࡔࡕ࡝໡ຠࠍ㐿⊒ߒߡ߹޿ࠅ߹ߔ‫ޕ‬ NECࠛ࡟ࠢ࠻ࡠ࠾ࠢࠬߪ㧘ࡔࡕ࡝੐ᬺಽ㊁ߦ߅޿ߡᏱߦᦨవ┵ߩᛛⴚࠍᛩ౉ߒ㧘

Contextual Info: Datasheet PD44165084B μPD44165094B μPD44165184B μPD44165364B 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0018EJ0200 Rev.2.00 October 6, 2011 Description The μPD44165084B is a 2,097,152-word by 8-bit, the μPD44165094B is a 2,097,152-word by 9-bit, the

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44165084A, 44165094A, 44165184A, 44165364A 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The μPD44165084A is a 2,097,152-word by 8-bit, the μPD44165094A is a 2,097,152-word by 9-bit, the μPD44165184A is a 1,048,576-word by 18-bit and the μPD44165364A is a 524,288-word by 36-bit synchronous quad data rate static RAM

uPD44165084

Abstract: uPD44165084F5-E40-EQ1 uPD44165084F5-E50-EQ1 PD44165364F5-E60-EQ1
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The μPD44165084 is a 2,097,152-word by 8-bit, the μPD44165184 is a 1,048,576-word by 18-bit and the μPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

UPD44164185F5-E60-EQ1

Abstract: UPD44165362F5-E60-EQ1 UPD444016LG5-A12-7JF UPD4482161GF-A85 UPD44325094F5-E33-EQ2 uPD431232ALGF-A10 uPD431232ALGF-A12 uPD431232ALGF-A7 uPD431232ALGF-A8 uPD431532LGF-A10
Contextual Info: NEC * - Tie down extra four I/Os with resistor uPD4382321GF-A85 GS880F32BT-7.5 + - Tie down extra two I/Os with resistor uPD4382321GF-A90 GS880F32BT-7.5 uPD4382322GF-A67 GS88032BT-200 UPD4311231LGF-A7 GS81032AT-5 uPD4382322GF-A75 GS88032BT-150 UPD4311231LGF-A8

mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Contextual Info: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.

Contextual Info: Preliminary Datasheet PD44165084B-A μPD44165094B-A μPD44165184B-A μPD44165364B-A 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION R10DS0018EJ0002 Rev.0.02 Aug 18, 2010 Description The μPD44165084B-A is a 2,097,152-word by 8-bit, the μPD44165094B-A is a 2,097,152-word by 9-bit, the

Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD44165084A-A, 44165094A-A, 44165184A-A, 44165364A-A 18M ビット QDR II SRAM 4 ワード・バースト・オペレーション μPD44165084A-A（2,097,152 ワ ー ド x 8 ビット）， μPD44165094A-A （ 2,097,152 ワード × 9 ビット），

EF25

Abstract: semiconductor quality assurance office organization samsung ddr 72M-Bit 1M x 72
Contextual Info: September 2009 2009.9 NEC Electronics will develop much more new memory products to meet the customer needs by making use of the high technical capabilities accumulated through the long development experience in leading-edge memory products. NEC Electronics has been continuously dedicating the cutting-edge