R02 P1D Search Results

TB241

Contextual Info: Decem mber 3, 20144 T TB241 Frequenccy=1.5-1200MHz Poout=10W Gaain=16dB Vd ds=24Vdc Id dq=0.6A Efficciency=43% % LP801 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m December 3, 2014 TB241 P1dB/P3dB vs Freq: Vds = 24Vdc, Idq = 0.6A

TB217

Abstract: PORCELAIN
Contextual Info: May 16, 2012 TB217#3 Frequency=30-512MHz Pout=10W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=30 to 55% LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com May 16, 2012 TB217#3 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=0.2A, Pout=10W

Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

FET J134

Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

Transistor J182

Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

1030MHz-1090MHz

Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

stacked transistor shunt switch

Abstract: RF 107 CMOS Stacked RF M21 mosfet matrix m21 SPDT stacked FET r01n Peregrine MRF MOSFET
Contextual Info: CMOS SOS SWITCHES DESIGN CMOS SOS Switches Offer Useful Features, High Integration Understanding the basic theory and characteristics underlying CMOS SOS switch technology opens the door to numerous RF and microwave applications. s witching RF and microwave signals is a fundamental function in all radio applications. Accordingly, there are a great

thermal compound wps II

Abstract: thermal compound wps philips resistor 2322-195 austerlitz heatsink catalogue transistor 6 pin SMD Z2 transistor SMD Z2 BGF1901-10 GSM1900 SR200
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification Supersedes data of 2003 Nov 17 2004 Oct 11 Philips Semiconductors Product specification GSM1900 EDGE power module BGF1901-10 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of

ACPR750

Abstract: BGF802-20 CDMA800
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Jun 13 2005 Jun 03 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of

smd code wt2

Abstract: 78R05
Contextual Info: MF1183-02 CMOS 8-BIT SINGLE CHIP MICROCOMPUTER S1C88348/317/316/308 Technical Manual S1C88348/317/316/308 Technical Hardware S1C88348/317/316/308 Technical Software NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko

smd code wt2

Contextual Info: MF1183-02 CMOS 8-BIT SINGLE CHIP MICROCOMPUTER S1C88348/317/316/308 Technical Manual S1C88348/317/316/308 Technical Hardware S1C88348/317/316/308 Technical Software NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko

transistor SMD t06

Abstract: transistor SMD t06 19 transistor SMD t07 SMD R5D diode SMD r5d smd R2D transistor SMD t04 SMD Transistor t06 94 lcd interfacing ppt free r5d smd
Contextual Info: MF1183-02 CMOS 8-BIT SINGLE CHIP MICROCOMPUTER S1C88348/317/316/308 Technical Manual S1C88348/317/316/308 Technical Hardware S1C88348/317/316/308 Technical Software NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko

ic 555 timer ppt

Abstract: r02 p1d digital stopwatch R36D ppt for ic 741 S1C8F360 SMD r5d SMD R5D diode smd code wt2 K06D
Contextual Info: MF805-05 CMOS 8-BIT SINGLE CHIP MICROCOMPUTER S1C88112/88104 Technical Manual S1C88112/88104 Technical Hardware S1C88112/88104 Technical Software NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko

transistor SMD t04

Abstract: SMD R5D diode mos 791-1 transistor SMD t07 SMD r5d ic 555 timer ppt transistor SMD t05 semiconductor voltage regulater smd code t04 r5d smd
Contextual Info: MF805-05 CMOS 8-BIT SINGLE CHIP MICROCOMPUTER S1C88112/88104 Technical Manual S1C88112/88104 Technical Hardware S1C88112/88104 Technical Software NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko

bt484

Contextual Info: Preliminary Information This docum ent contains inform ation on a new product. The param etric inform ation, although not fully characterized, is the result o f testing initial devices. Bt484 Distinguishing Features 85, 75 M H z Pipelined Operation 8:1, 4:1, 2:1, 1:1 M ultiplexed Pixel Ports

H8SX 1721

Abstract: R5F61727S 1720S
Contextual Info: User's Manual The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. H8SX/1720S Group 32 User’s Manual: Hardware Renesas 32-Bit CISC Microcomputer H8SX Family / H8SX/1700 Series

TLCS-47 series instruction set

Contextual Info: TOSHIBA TMP47C200BN, TMP47400BN TMP47C200BF, TMP47400BF CMOS 4-Bit Microcontroller The 47C200B/400B are high speed and high performance 4bit single chip microcomputers, integrating ROM, RAM, input/ output ports, timer/counters, and a serial Interface on a chip.

bt463

Abstract: brooktree bt463 ero 1818 film capacitor
Contextual Info: Preliminary Information This docum ent contains inform ation on a new product. The param etric inform ation, although not fully characterized, is the result o f testing initial devices. Bt463 Distinguishing Features • • • • • • • • • •

s1d1374

Abstract: BC 148 L s1d13748 S1D13748B00
Contextual Info: S1D13748B00 Mobile Graphics Engine Hardware Functional Specification Document Number: X80A-A-001-01 Status: Revision 1.03 - EPSON CONFIDENTIAL Creation Date: 2005/11/26 Issue Date: 2007/09/14 SEIKO EPSON CORPORATION 2005-2007. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in

s1d13748

Abstract: S1D13748F S1D13748B E76581 3" wqvga 37 pin LCD pinout s1d1374 X80A-A-001-01 R05D12 S1D13748B00
Contextual Info: S1D13748 Mobile Graphics Engine Hardware Functional Specification Document Number: X80A-A-001-01 Status: Revision 1.4 Creation Date: 2005/11/26 Issue Date: 2010/06/11 SEIKO EPSON CORPORATION 2005-2010. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in

BHC ALS capacitor

Abstract: ero 1818 film capacitor brooktree bt463 L463001 P19C h plane tee P22AJ bhc alp 20a BHC ALS 20a
Contextual Info: Bt463 Distinguishing Features Applications 135, 110 M H z O p e ra tio n M u ltip le D isp la y M o d e s o n a P ix el B a sis • H ig h R e so lu tio n C o lo r G ra p h ic s • M e d ic a l Im a g in g M u ltip le C o lo r M a p s • V isu a liz a tio n

opo7

Abstract: 11018-A tmp47c1260n QFP64 TLCS-470 TMP47C006E TMP47C1260F TMP47C1660F TMP47C1660N
Contextual Info: T O SH IB A TM P47C1260/1660/006 C M O S 4-B IT M I C R O C O N T R O L L E R TMP47C1260N, TMP47C1660N TM P47C1260F, TMP47C1660F Th e 4 7 C 1260/1660 a re th e h ig h speed and h ig h p e rfo rm a n c e 4 -b it sin g le ch ip m ic ro co m p u te r, w ith la rg e

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

SH7707

Abstract: a888 513 w414 chr 2451 Hitachi ULSI Systems stc 640-8 8 pin ic lm 358 diode marking code 4n hitachi lcd lm 234 IRPF 650
Contextual Info: SH7707 Hardware Manual ADE-602-137 Rev.1.0 3/98 Hitachi, Ltd. MC-Setsu Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole