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Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Data Sheet N0600N R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 25 m MAX. (VGS =10 V, ID = 15 A)	Original	N0600N R07DS0220EJ0100 N0600N N0600N-S17-AY 50p/tube O-220	PDF
N0600N-S17 Abstract: N0600N-S17-AY N0600N N0600 Contextual Info: Preliminary Data Sheet N0600N R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A)	Original	N0600N R07DS0220EJ0100 N0600N N0600N-S17-AY 50p/tube O-220 Voltage9044 N0600N-S17 N0600	PDF

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Contextual Info: Preliminary Data Sheet N0600N R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 25 m MAX. (VGS =10 V, ID = 15 A)

Original

N0600N R07DS0220EJ0100 N0600N N0600N-S17-AY 50p/tube O-220

PDF

N0600N-S17

Abstract: N0600N-S17-AY N0600N N0600
Contextual Info: Preliminary Data Sheet N0600N R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A)

Original

N0600N R07DS0220EJ0100 N0600N N0600N-S17-AY 50p/tube O-220 Voltage9044 N0600N-S17 N0600

PDF