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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0421EJ0100 Rev.1.00 May 31, 2011 Features • Low on-resistance RDS on = 0.515 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching


    Original     		PDF RJK5012DPP-M0 R07DS0421EJ0100 PRSS0003AF-A O-220FL)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0421EJ0100 Rev.1.00 May 31, 2011 Features • Low on-resistance RDS on = 0.515 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching


    Original     		PDF RJK5012DPP-M0 R07DS0421EJ0100 PRSS0003AF-A O-220FL)