R07DS0632EJ0100 Search Results
R07DS0632EJ0100 Datasheets Context Search
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Contextual Info: Preliminary Datasheet RJH60F6BDPQ-A0 600V - 45A - IGBT High Speed Power Switching R07DS0632EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package |
Original |
RJH60F6BDPQ-A0 R07DS0632EJ0100 PRSS0003ZH-A O-247A) | |
rjh60f6Contextual Info: Preliminary Datasheet RJH60F6BDPQ-A0 600V - 45A - IGBT High Speed Power Switching R07DS0632EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package |
Original |
RJH60F6BDPQ-A0 R07DS0632EJ0100 PRSS0003ZH-A O-247A) rjh60f6 |