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    Text: Preliminary Datasheet RJK2076DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0859EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.068  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C)


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