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    R2M 25 DIODE Search Results

    R2M 25 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    R2M 25 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode r2m 26

    Abstract: diode r2m HP 2530
    Text: R2M / RY2 / RUC Industrial Electromagnetic Relays ● Relays of general application ● For plug-in sockets, 35 mm rail mount or on panel mounting ● Cadmium-free contacts ● R2M and RUC also for PCB and soldering connections ● AC and DC coils available


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    PDF E105728 diode r2m 26 diode r2m HP 2530

    ZENER R2M

    Abstract: Diode Zener R2M R2M zener diode R2M diode diode r2m 26 R2M 45 zener Diode R2M R2M 45 r2m 41- zener diode R2M* Avalanche Diode
    Text: R2M AVALANCHE DIODE D2 V RM : 130 Volts IZSM : 1.0 Amp. 100 µ s 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) FEATURES : * * * * 600 W surge capability at 1ms Excellent clamping capability Low zener impedance Fast response time : typically less than 1.0 ps from 0 volts to BV min.


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    PDF UL94V-O MIL-STD-202, ZENER R2M Diode Zener R2M R2M zener diode R2M diode diode r2m 26 R2M 45 zener Diode R2M R2M 45 r2m 41- zener diode R2M* Avalanche Diode

    Diode Zener R2M

    Abstract: R2M zener diode
    Text: R2M AVALANCHE DIODE D2 V RM : 130 Volts IZSM : 1.0 Amp. 100 µ s 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) FEATURES : * * * * 600 W surge capability at 1ms Excellent clamping capability Low zener impedance Fast response time : typically less than 1.0 ps from 0 volts to BV min.


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    PDF UL94V-O MIL-STD-202, Diode Zener R2M R2M zener diode

    Socket Accessories

    Abstract: No abstract text available
    Text: Mounting and sub-assemblies 240 of the relay and accessories in the socket Signalling / protecting module type M. Electromagnetic relays Removing the relay from the socket with a retrainer / retractor clip Retainer / retractor clip Description plate Screw terminals


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    PDF GZT80, GZT92, GZM80, GZM92 GZS80, GZS92 GZT80-0040 GZS-0040 GZT4-0040 GZT80-0035 Socket Accessories

    GZ80

    Abstract: PW80 Diode R2M gw96 R2M diode rm84 ES50/3 gz92 RM85 RM87N
    Text: 137 Sockets and accessories availability index RELAY Modules available with Sockets Solder terminals socket PCB terminals socket Screw terminals socket Retainer/ retractor clip Description plate RM84 – GW80, PW80 GZ80, ES50/3 GZ80, ES50/3 MS16 TR RM85 –


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    PDF ES50/3 105oC RM87N RM87L GZ80 PW80 Diode R2M gw96 R2M diode rm84 ES50/3 gz92 RM85 RM87N

    in6263

    Abstract: coil gold detector circuit diagram OPA660 R2M diode transconductance amplifier spice OPA660AU REF200 2N2907 BUF601 OPA1013
    Text: OPA 660 OPA660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● HIGH SLEW RATE: 3000V/µs ● VIDEO/BROADCAST EQUIPMENT ● COMMUNICATIONS EQUIPMENT ● LOW DIFFERENTIAL GAIN/PHASE


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    PDF OPA660 850MHz OPA660 660-1GC 470pF 470pF 1N4007 in6263 coil gold detector circuit diagram R2M diode transconductance amplifier spice OPA660AU REF200 2N2907 BUF601 OPA1013

    IN6263

    Abstract: AGC OPA660 R2M 45 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 sbos007
    Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    PDF OPA660 850MHz OPA660 IN6263 AGC OPA660 R2M 45 2N2907 OPA1013 OPA660AP OPA660AU REF200 sbos007

    Untitled

    Abstract: No abstract text available
    Text: Industrial relays 105 Industrial relays Miniature industrial relays Industrial relays of small dimensions 106 R3 . 111 R4 . 115 RY2 . 120 R2M . 124


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    PDF RS35-3022-25-1005 RS50-3022-25-1110

    AGC OPA660

    Abstract: in6263 transconductance amplifier spice spice model 1n4148 DMF3068A operational amplifier discrete schematic 1n4148 spice model Group-Delay phase filter OTA operational transconductance amplifier pin configuration transistor 2n2907
    Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    PDF OPA660 850MHz OPA660 470pF 470pF 1N4007 AGC OPA660 in6263 transconductance amplifier spice spice model 1n4148 DMF3068A operational amplifier discrete schematic 1n4148 spice model Group-Delay phase filter OTA operational transconductance amplifier pin configuration transistor 2n2907

    Modules A

    Abstract: No abstract text available
    Text: Altech Corporation 35 Royal Road Flemington, NJ 08822-6000 P 908.806.9400 • F 908.806.9490 www.altechcorp.com Altech Corp. 410-112013-5M Printed November 2013 Since 1984, Altech Corporation has grown to become a leading supplier of automation and industrial


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    PDF 410-112013-5M UL508 0-960W Modules A

    opa1013 equivalent

    Abstract: AGC OPA660 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 CCII APPLICATION 0525P
    Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    PDF OPA660 850MHz OPA660 opa1013 equivalent AGC OPA660 2N2907 OPA1013 OPA660AP OPA660AU REF200 CCII APPLICATION 0525P

    IN6263

    Abstract: 1N4007 BL transconductance amplifier spice 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 2N2907 spice
    Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    PDF OPA660 850MHz OPA660 IN6263 1N4007 BL transconductance amplifier spice 2N2907 OPA1013 OPA660AP OPA660AU REF200 2N2907 spice

    2N2907

    Abstract: OPA1013 OPA660 OPA660AP OPA660AU REF200 BUF601
    Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    PDF OPA660 850MHz OPA660 2N2907 OPA1013 OPA660AP OPA660AU REF200 BUF601

    AGC OPA660

    Abstract: in6263 operational amplifier discrete schematic bridge rectifier 1N4007 bl Common collector configuration basic R2M diode 1N4007 spice DMF3068A R2M 45 spice model 1n4148
    Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    PDF OPA660 850MHz OPA660 AGC OPA660 in6263 operational amplifier discrete schematic bridge rectifier 1N4007 bl Common collector configuration basic R2M diode 1N4007 spice DMF3068A R2M 45 spice model 1n4148

    Basic principle of AC to DC conversion using SCR

    Abstract: RE78
    Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338C – AUGUST 2005 – REVISED JUNE 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high


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    PDF OPA861 SBOS338C 80MHz, 95mA/V) OPA861 Basic principle of AC to DC conversion using SCR RE78

    in6263

    Abstract: BUF601
    Text: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    PDF OPA660 850MHz 400MHz OPA660 in6263 BUF601

    SCR POWER SUPPLY

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338A – AUGUST 2005 – REVISED FEBRUARY 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high


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    PDF OPA861 SBOS338A 80MHz, 95mA/V) OPA861 SCR POWER SUPPLY

    ota amplifier

    Abstract: bjt audio amplifier pcb layout REF200
    Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338B – AUGUST 2005 – REVISED APRIL 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high


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    PDF OPA861 SBOS338B 80MHz, 95mA/V) OPA861 ota amplifier bjt audio amplifier pcb layout REF200

    ccii

    Abstract: PACKAGE MARKING RADJ SOT23 R2S sot23 transistor marking R2s OPA861 OPA861ID OPA861IDBVR OPA861IDBVT OPA861IDR transconductance amplifier spice
    Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338 – AUGUST 2005 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high


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    PDF OPA861 SBOS338 OPA861 80MHz, 95mA/V) ccii PACKAGE MARKING RADJ SOT23 R2S sot23 transistor marking R2s OPA861ID OPA861IDBVR OPA861IDBVT OPA861IDR transconductance amplifier spice

    ZENER R2M

    Abstract: No abstract text available
    Text: AVALANCHE ZENER DIODES WITH B I ILT-IN THYRISTOR AVALANCHE ZENER DIODES Absolute Maximum Ratings (TA=25°C) V rm Type No. IzSM W VZ (V) Ir V rm (A) Instantaneous Instantaneous <h A) m Current Max. Max. (V) Current RM25 40 50 3.0 60 to 70 5 20 1.0 135 to 180


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    PDF RZ1030 RZ1065 RZ1200 RZ1225 RZ1175 RZ1125 RZ1150 PZ227 PZ427 PZ628 ZENER R2M

    ZENER R2M

    Abstract: RY24 ZENER R2M 30 R2M zener RM25 RY23 PZ628 RM26 z127 PZ-628
    Text: AVALANCHE ZENER DIODES WITH BUILT-IN THYRISTOR AVALANCHE ZENER DIODES Absolute Maximum Ratings (TA=25°C) IzSM (A) Vz (V) (A) 1mA Instantaneous Instantaneous (HA) (HA) Current Max. Max. V rm Type No. (V) Current RM25 40 Ir V rm 50 3.0 60 to 70 5 20 130 1.0


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    PDF RZ1030 RZ1055 RZ1065 RZ1100 RZ1125 RZ1150 ZENER R2M RY24 ZENER R2M 30 R2M zener RM25 RY23 PZ628 RM26 z127 PZ-628

    BU508A

    Abstract: BU508D transistor d 1991 ar T1185 philips bu508a transistor Bu508A
    Text: N AMER PHILIPS/DISCRETE blE D • bb£3^31 D02A2b4 DEI BU508A BU508D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed sw itching npn tran sisto r in S O T 93A envelope intended fo r use in h o rizontal d e flectio n c irc u its o f co lo u r television receivers. T he BU 508D has an integrated e fficien cy diode.


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    PDF D02A2b4 BU508A BU508D OT93A BU508D BU508D) transistor d 1991 ar T1185 philips bu508a transistor Bu508A

    BDV66D

    Abstract: BDV68 BDV68C BDV66C A11T darlington pair transistor BDV66A BDV67A M0433
    Text: BDV66A; B _ JI BDV66C; D PHILIPS INTERNATIONAL SbE D • 711002b 0043370 S41 * P H I N ~ r -3 3 -y i DARLINGTON PO W ER TRANSISTO RS P-N-P epitaxial base Darlington transistors for audio output stages and general amplifier and switching


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    PDF BDV66A; BDV66C; 711002b m04337fl T-33-3 BDV67A; BDV66A T-33-31 BDV66D BDV68 BDV68C BDV66C A11T darlington pair transistor BDV67A M0433

    J295

    Abstract: BU705 BU705D
    Text: I [ PHILIPS INTERNATIONAL MSE D E3 711QñHb OD3üñcí3 3 E3PHIN BU705 BU705D A T '3 3 - P SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivated npn pow er transistor in a S O T 9 3 A envelope, intended fo r use in horizontal deflection circuits o f television receivers. The B U 7 0 5 D has an integrated efficiency


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    PDF 711QfiHt. BU705 BU705D T-33-P OT93A BU705D BU705D) J295 BU705