R600 Search Results

Contextual Info: R6004ENX Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: MCC R3500F THRU R6000F Features • • • • AVALANCHE OPERATION UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOND BEVELED ROUND CHIP LOW COST 0.2A Fast Recovery High Voltage Rectifier 3500 - 6000 Volts Maximum Ratings • • DO-15 Operating Temperature -55 °C to +125 °C

DGX110E12TAW

Abstract: DGX110E12TAW R600a DGX125E14TAW panasonic R134a catalog refrigerant refrigerant r600a data sheet R600a refrigerant r600a capacitor start induction motor r600a oil charge
Contextual Info: Panasonic Compressor R600a DGX series Performance DATA Application & Refrigerant LBP R134a DisplaceVoltage Model ment cm3 *1 Capacity W) *2) COP *3) Compressor Net weight Oil charge 3 Evaporating temperature Run. capa. cooling *4) kg cm Motor type Cecomaf

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6006AND  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.

Contextual Info: R6008ANX Transistors 10V Drive Nch MOSFET R6008ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

RB 121 A

Abstract: RB 122 A DC126A 1sna 399 967 r0100 R0200 1sna 399 903 r0200 1sna 645 012 r2500 121-12VDC RB122A RB 121 A - 230vac
Contextual Info: 19 R600 Relay modules DIN 3 ce fa r s te In elay r Relay : 1NO or 1NC level contact 10 mA upto 6 A - 6 mm .236" or 12 mm .472" spacing Characteristics RB.111A Relay characteristics COIL Rated voltage +20%, -15% on DC ; +10%, -10% on AC Frequency Power Rated current

R644-3F

Abstract: R636 R600 R636-1 R636-2 R644-3C R656-2 R680-1 UL-94V-1 K 3596
Contextual Info: CATALOG 126 backup:CATALOG 126.qxd 6/15/2009 3:44 PM Page 69 PCB Accessories ELECTRONICS & TECHNOLOGY, INC. A FINE TECHNOLOGY GROUP R600 Edge Connectors This section contains parts and accessories for Vectorbord products. They are useful for board-level prototyping and breadboarding. Prototypes are created in various ways; by computer design or by hand

Contextual Info: R6006AND Data Sheet 10V Drive Nch MOSFET R6006AND  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.

Contextual Info: R6008FNX Nch 600V 8A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R6008FNJ Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

94V1

Abstract: UL 94v-0 board UL-94V-1 94V-0 94v-1 R680-1 2 94v-0 board UL94-V1 transistor r600 R636-1
Contextual Info: CATALOG 126:CATALOG 126.qxd 3/17/2009 1:12 PM Page 69 PCB Accessories ELECTRONICS & TECHNOLOGY, INC. A FINE TECHNOLOGY GROUP R600 Edge Connectors This section contains parts and accessories for Vectorbord products. They are useful for board-level prototyping and breadboarding. Prototypes are created in various ways; by computer design or by hand

Contextual Info: MCC R3500F THRU R6000F
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • AVALANCHE OPERATION UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOND BEVELED ROUND CHIP LOW COST

R6006ANX

Contextual Info: 10V Drive Nch MOSFET R6006ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple.

Contextual Info: R4000 THRU SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LTD, R6000 TECHNICAL SPECIFICATIONS O F H IG H VOLTAGE S ILIC O N R EC TIFIER VOLTAGE RANGE - 4000 to 5000 Volts CURRENT - 0.2 Ampere FEATURES * Low cost * Low leakage ' Low forward voltage drop

Contextual Info: Customer Information Sheet DRAWING No.: R6003-00 - R 6 0 2 2 -00 SHEET 2 OF 2 I IF IN D O U B T - ASK TÆ2 NOT I TO SCALE THIRD ANGLE I PROJECTION ALL DIMENSIONS IN m m V ////// I .60 I .60 'L 03.8 0Í' Y /////X uu 1 1 — •3.80PART 0 4.80 'A'- No. 'L '

Contextual Info: R6002225YA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current250 V(RRM)(V) Rep.Pk.Rev. Voltage2.2k t(rr) Max.(s) Rev.Rec. Time11u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)800

Contextual Info: R6006AND Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

PARW5

Contextual Info: R6008FNX Nch 600V 8A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

r600a

Abstract: refrigerant r600a r600a oil charge SF 129 C refrigerant SF65E60RA00 compressor SF65E62GA00 refrigerant r600a data sheet r600a refrigerant
Contextual Info: Compressor R600a SF series Performance DATA Application & Refrigerant LBP R600a Displace*1 Capacity W) *2) C.O.P. *3) Compressor Net weight Oil charge 3 cooling *4) ment Evaporating temperature Run. capa. kg Voltage Model cm Motor type cm3 -30°C -25°C -23.3°C -20°C -15°C NO YES

Contextual Info: R6004ENJ Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

R6007ENJ

Contextual Info: R6007ENJ Nch 600V 7A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.620W ID 7A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

Contextual Info: R6009ENX Nch 600V 9A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.535W ID 9 PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

CPT600100

Abstract: CPT60080 CPT60090 MBR600100CT MBR60080CT
Contextual Info: d c r600i 00 Schottky Powe rMo D D " 60080 c r • V V Baseplate A=Common Anode 1 U * "1 i H h 1 / “ I- \ Baseplate Common Cathode F ¡ / -I il- u \ — , r r t _L‘ °-N - I Baseplate D=Doubler Notes: Baseplate: Nickel plated copper Microsemi Catalog Number

CPT600120

Abstract: CPT600150
Contextual Info: Schottky Powerl Vloc c D " r600120 V V Baseplate A=Common Anode Baseplate Common Cathode u t"1 1 1 — T / t Í » W - Microsemi Catalog Number r 1 TT E Notes: 141 - Industry Part Number °-N - t 1 c I Baseplate D=Doubler c D “r6 0 0 i 50 Dim. Inches Min.