R6008 Search Results

Contextual Info: R6008ANX Transistors 10V Drive Nch MOSFET R6008ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: R6008FNX Nch 600V 8A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R6008FNJ Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

PARW5

Contextual Info: R6008FNX Nch 600V 8A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R6008FNX R6008FNX Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R6008ANX Datasheet Nch 600V 8A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.8Ω ID 8A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

R6008

Abstract: R6008ANX 00E-6
Contextual Info: SPICE PARAMETER R6008ANX by ROHM TR Div. * R6008ANX NMOSFET model * Date: 2007/07/25 *D G S .SUBCKT R6008ANX 1 2 3 M1 11 22 3 3 MOS_N C1 1 3 10p D1 3 1 DDS R1 1 11 RTH .539 D2 11 21 DDG D3 22 21 DDG R2 2 22 20 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

R6008FN

Contextual Info: R6008FNX Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6008FNJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Fast reverse recovery time (trr) 4.5 1.0 1.24 2.54 0.78 2.7 5.08 (1) (2) 0.4 1.2 3.0 2) Low on-resistance. 3) Fast switching speed.

Contextual Info: R6008ANX Transistors 10V Drive Nch MOSFET R6008ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

R6006-00

Abstract: R6008-00 R6003-00 R6009-00 R6010-00 R6013-00 R6022-00 UL94-V2
Contextual Info: Customer Information Shee DRAWING No.; R6003 -00 - R6022-00 SHEET 2 OF IF IN DOUBT - ASK j çj | NOT TO SCALE A LL DIMENSIONS IN mm THIRD ANGLE PROJECTION ORDER CODE: R60XX-00 PART No, R6003-00 R6006-00 R6008-00 R6010-00 R6013-00 R6022-00 •L' 3,20 6,30

R6008ANX

Contextual Info: 10V Drive Nch MOSFET R6008ANX Structure Silicon N-channel MOSFET zDimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 0.8 (1)Base 2.54 (2)Collector 2.54 0.75 2.6 (1) (2) (3) (3)Emitter zApplications Switching zPackaging specifications zInner circuit Bulk Package

Contextual Info: R6008ANX R6008ANX Datasheet Nch 600V 8A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.8Ω ID 8A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R6008FNJ R6008FNJ Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R6008FNJ Nch 600V 8A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R6008FNJ Nch 600V 8A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

R6008FNX

Abstract: R6008
Contextual Info: 10V Drive Nch MOSFET R6008FNX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Fast reverse recovery time. 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V.

R6008

Abstract: R6008ANX
Contextual Info: R6008ANX Transistors 10V Drive Nch MOSFET R6008ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

bd622d

Abstract: BD623d RPI-441C1E BD6221F BA6287 BD6387 BD6222 BD6222HFP BD6230F bd62
Contextual Info: Power Products Energy-saving PWM drivers H-bridge Drivers for DC Brush Motors ÎPWM BD621 □ / BD622D / BD623D series ROHM's easy-to-use high efficiency H-bridge drivers for DC brush motors enable speed control while driving by performing switching lïïik v

V3V REV-1.1

Abstract: asus C5027 r d5703 X7RA 47N217 C5706 c6005 3VA2 ICS954310BG
Contextual Info: A B C D E A8J/F SCHEMATIC R11 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 YONAH CPU 1 YONAH CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN. Calistoga-CPU

QG82945PM

Abstract: asus R7790 47n217 isl6227caz ISL6262CRZ rtl8111b d5702 C5022 R5538
Contextual Info: A B C D E A8Jp/Jv/Je/Jn/Fm SCHEMATIC 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Merom CPU 1 Merom CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN.

IT8511TE

Abstract: asus C5915 IT8511 C3923 J6801 c7319 R5707 T8-232 T2448
Contextual Info: 5 01 D C B A 4 Block Diagram 61 02 System Setting 62 USB CONN 03 * 63 * 04 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM 06 * 66 LED 07 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2)

asus

Abstract: 47n217 R7790 C5706 c5701 R5314 ISL6262CRZ ICS954310BGLFT rtl8111b powerload
Contextual Info: A B C D E A8J/F SCHEMATIC 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 YONAH CPU 1 YONAH CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN. Calistoga-CPU