R6020 Search Results
R6020 Price and Stock
TAIYO YUDEN NR6020T3R3NFIXED IND 3.3UH 2.6A 48 MOHM SMD |
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NR6020T3R3N | Cut Tape | 31,277 | 1 |
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NR6020T3R3N | Reel | 7 Weeks | 2,500 |
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NR6020T3R3N | Reel | 2,500 |
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NR6020T3R3N | 9,710 | 2,500 |
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NR6020T3R3N | 9,710 |
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TAIYO YUDEN NR6020T220MFIXED IND 22UH 950MA 348MOHM SMD |
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NR6020T220M | Cut Tape | 22,046 | 1 |
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NR6020T220M | Reel | 7 Weeks | 2,500 |
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NR6020T220M | 2,500 | 2,500 |
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NR6020T220M | 2,500 |
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TAIYO YUDEN NR6020T100MFIXED IND 10UH 1.4A 150 MOHM SMD |
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NR6020T100M | Digi-Reel | 2,395 | 1 |
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NR6020T100M | Reel | 7 Weeks | 2,500 |
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NR6020T100M | Cut Tape | 2,500 |
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NR6020T100M | 2,500 |
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ROHM Semiconductor R6020JNJGTLMOSFET N-CH 600V 20A LPTS |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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R6020JNJGTL | Digi-Reel | 1,773 | 1 |
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R6020JNJGTL | 848 |
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R6020JNJGTL | Cut Tape | 43 | 1 |
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R6020JNJGTL | 160 |
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R6020JNJGTL | 22 Weeks | 1,000 |
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ams OSRAM Group LZ1-00R602-0000EMITTER IR 850NM 1.2A SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LZ1-00R602-0000 | Reel | 1,000 | 500 |
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LZ1-00R602-0000 | Reel | 20 Weeks | 1,000 |
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LZ1-00R602-0000 | 10 Weeks | 1,000 |
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LZ1-00R602-0000 | 13 Weeks | 500 |
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R6020 Datasheets (94)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| R60200-1CR | Cooper Bussmann | Fuseholders, Circuit Protection, FUSE BLOK CART 600V 200A CHASSIS | Original | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R60200-1CRQ | Cooper Bussmann | Fuseholders, Circuit Protection, FUSE BLOK CART 600V 200A CHASSIS | Original | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R60200-3CR | Cooper Bussmann | Fuseholders, Circuit Protection, FUSE BLOK CART 600V 200A CHASSIS | Original | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020120CJYA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 125.42KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020120EJYA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 123.69KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020120FJYA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 116KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020125CJYA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 125.42KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020125EJYA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 123.69KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020125FJYA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 116KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020210FJWA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 116KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020220CJYA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 125.42KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020220EJYA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 127.42KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020222PSYA | Powerex | 200V, 220A fast recovery single diode | Scan | 268.97KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020225CJYA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 125.42KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| R6020225EJYA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 127.42KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020225FJYA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 116KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020225HSYA | Powerex | 200V, 250A fast recovery single diode | Scan | 509.59KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020235ESYA | Powerex | 200V, 350A fast recovery single diode | Scan | 786.32KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020325CJYA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 125.42KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020325EJYA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 127.42KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
R6020 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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R6020ENXContextual Info: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. |
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R6020ENX O-220FM R1102A R6020ENX | |
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Contextual Info: R6020ENZ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. |
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R6020ENZ R1102A | |
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Contextual Info: R6020ANX Transistors 10V Drive Nch MOSFET R6020ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. |
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R6020ANX O-220FM | |
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Contextual Info: R6020FNX Data Sheet Nch 600V 20A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed. |
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R6020FNX O-220FM R1102A | |
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Contextual Info: Silicon Dual Power fRectifier S "F SI r6020 r A^ ¥ B aseplate A=Common Anode X. V Baseplate Common Cathode °-V r I -W -o Baseplate D=Doubler 601 0 0 Dim . Inch es M illim e te r M inim um M axim um M inim um _ A B C D E F G H J .875 .450 -.063 1.197 |
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r6020 | |
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Contextual Info: R6020420CJYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time3.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition)36 V(FM) Max.(V) Forward Voltage1.8 |
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R6020420CJYA Current200 Voltage400 Current50m | |
R6020FNJContextual Info: R6020FNJ Nch 600V 20A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.28Ω ID ±20A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr). |
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R6020FNJ R6020FNJ | |
R6020ANZ
Abstract: R6020
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R6020ANZ R6020ANZ R1120A R6020 | |
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Contextual Info: Data Sheet 10V Drive Nch MOSFET R6020FNX Structure Silicon N-channel MOSFET Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage |
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R6020FNX O-220FM R6020FNX R1120A | |
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Contextual Info: R6020725HSYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current800 V(RRM)(V) Rep.Pk.Rev. Voltage700 t(rr) Max.(s) Rev.Rec. Time1.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage2.0 |
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R6020725HSYA Current800 Voltage700 Current50m | |
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Contextual Info: R6020FNX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed. |
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R6020FNX O-220FM R1102A | |
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Contextual Info: R6020ENJ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source |
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R6020ENJ SC-83) R1102A | |
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Contextual Info: 10V Drive Nch MOSFET R6020ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. |
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R6020ANJ R0039A | |
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Contextual Info: R6020FNX Data Sheet 10V Drive Nch MOSFET R6020FNX Structure Silicon N-channel MOSFET Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. |
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R6020FNX O-220FM R6020FNX R1120A | |
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Contextual Info: R6020ENX Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. |
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R6020ENX O-220FM R1102A | |
R6020Contextual Info: Data Sheet 10V Drive Nch MOSFET R6020ANZ Structure Silicon N-channel MOSFET Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 10.0 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 |
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R6020ANZ R6020ANZ R1120A R6020 | |
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Contextual Info: 10V Drive Nch MOSFET R6020ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. |
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R6020ANJ R0039A | |
R6020ENZContextual Info: R6020ENZ1 Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. |
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R6020ENZ1 O-247 R1102A R6020ENZ | |
R6020-ANXContextual Info: R6020ANX Datasheet Nch 600V 20A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. |
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R6020ANX O-220FM R1120A R6020-ANX | |
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Contextual Info: R6020ENZ1 Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. |
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R6020ENZ1 O-247 R1102A | |
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Contextual Info: R6020625CJYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current250 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time3.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition)36 V(FM) Max.(V) Forward Voltage1.6 |
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R6020625CJYA Current250 Voltage600 Current50m | |
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Contextual Info: R6020635ESYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current800 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 |
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R6020635ESYA Current800 Voltage600 Current50m | |
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Contextual Info: R6020435ESYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current800 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 |
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R6020435ESYA Current800 Voltage400 Current50m | |
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Contextual Info: R6020ANX Nch 600V 20A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. |
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R6020ANX O-220FM R1120A | |