R8 2K Search Results

STM8L151

Abstract: STM8L152R6 STM8L151C8 STM8L Reference Manual USART3 LCD 8x40 lcd 5421 pm0044 STM32L STM8L152R8
Contextual Info: STM8L151M8/R8/C8 STM8L151R6 STM8L152M8/R8/C8 STM8L152R6 8-bit ultralow power MCU, up to 64 KB Flash, up to 2KB data EEPROM RTC, LCD, timers, USARTs, I2C, SPIs, ADC, DAC, comparators Preliminary data Features • ■ ■ Operating conditions – Operating power supply: 1.65 to 3.6 V

j1 3003

Abstract: R1075 APR3003 XFATM2X-CLxu1-4S
Contextual Info: S ch e m a tic : 8 o- 1CT: 1CT RJ45 7 o- J8 J7 J6 6 o- RX 1CT:1CT J5 J4 5 o4 o- J!'nnrL 3 o- TX 2H 9 o- 10 o- 11 o- J3 J2 J1 Shld Left LED •R10 *R9 > S R8 > R7 Right LED 12 o- XFATM2X COMBO w/ LED's 9 1 1000pF E le c tr ic a l ^ 2KV R7,R8,R9,R10: 75 OHMS

Contextual Info: S ch e m atic: 8 o- 1CT: 1CT R J45 7 o- 6 o- J8 J7 J6 RX 1CT: 1CT 5 o- J5 J4 ft 4 o- J3 J2 J1 I g iO T V ' ^ 3 o- — TX Shld •R10 XFATMZX COMBO i R9 i R8 > R7 1OOQpF R7.R8.R9.R10: 75 OHMS 2KV 7 E lectrical S p e c i f i c a t i o n s : @25 C UTP Impedance: 100 OHMS

Contextual Info: S ch e m atic: 8 o- 1CT: 1CT R J45 7 o- J8 J7 6 o- J6 J5 J4 RX 1CT: 1CT 5 o- ft J3 4 o- J2 J1 I g iO T V ' 3 o- ^ — TX Shld •R10 XFATMZX COMBO i R9 i R8 > R7 1OOQpF 2KV R7.R8.R9.R10: 75 OHMS 7 E lectrical S p e c i f i c a t i o n s : @25 C UTP Impedance: 100 OHMS

R10-75

Abstract: R1075
Contextual Info: S c h em a tic: 8 o- 1 CT: 1CT RJ45 7 o- J8 J7 J6 J5 J4 J3 J2 J1 6 o- RX 1 CT: 1 CT 5 o- 4 o3 o- TX Shld 2 o—! R8 > R7 •R10 > R9 XFATM2X COMBO 9 1 lOOOpF 2KV R7,R8,R9,R10: 75 OHMS /7 7 E lec trica l S p e c i f ic a t io n s : 25°C UTP Im pedance: 100 OHMS

Contextual Info: KOA SPEER ELECTRONICS, INC. TN-196 R8 AHA 8/03/04 Ceramic Chip Capacitors Type NPO, X5R, X7R, Y5V, Z5U CERTIFIED 1. General 1-1 Range of Application This document applies to miniaturized ceramic chip capacitors for applications in circuits of electronic devices.

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-223 R8 AHA 8/05/05 Multi Layer Ferrite Inductors Type MCL CERTIFIED CERTIFIED 1. General • Monolithic structure for closed magnetic path eliminates crosstalk and provides high reliability in a wide range of temperature and humidity ranges

12Mhz crystal oscillator

Abstract: SHOGYO 3.5mm headphone jack 1mh inductor Shogyo SJS-0354-5P JP15 3.5mm stereo headphone jack SJS-0354-5P JP13 C18-C20 12mhz crystal
Contextual Info: Bill of Materials for LM4931-ITL Demo Board 11/5/2003 Assembly Notes: - No special considerations. Symbol Value Tolerance Type/Description R1, R4 2kΩ 2% 1/10 Watt, Size code: 0805 R2, R3, R6, R8, R99 100kΩ 2% 1/10 Watt, Size code: 0805 R5, R7 5kΩ 2%

diode 1N4001 voltage limitations

Abstract: lead gel battery 007C 1N4001 LM393N TN0604N3 TN2504N8 AN-D09 INTRINSIC SAFE CIRCUIT AA battery R6
Contextual Info: AN-D09 Application Note Battery Back-Up Utilizing Low Threshold MOSFETs Introduction by R8 and the intrinsic drain to source diode of Q2. For fully discharged batteries, there will be a high charge current for a few seconds, rapidly decaying to a slow charge.

HFA3046

Abstract: 74HCT193 HFA1145 74HCT00 74HCT123 74HCT32 HA4600 HA5020 transistor 9740
Contextual Info: TM Digital Control Selects The Number of Analog Cycles and Burst Frequency Application Note July 1997 AN9740 Authors: Alan Erzinger and Ron Mancini Introduction comparator. R6, R7, and R8 bias the long tailed transistor at 10mA which is the optimum point for speed. R5 and R6 are

"lead acid" battery monitor

Abstract: lead gel battery BATTERY AA discharge test blown fuse indicator
Contextual Info: TN06 Series Application Note AN–D9 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction The simple battery backup circuit shown in Figure 1 utilizes Supertex low threshold DMOS devices to achieve excellent efficiency. cells in series, is being charged with a current set by R8 and the

INTRINSIC SAFE CIRCUIT

Abstract: lead gel battery 007C 1N4001 LM393N TN0604N3 TN2504N8
Contextual Info: TN06 Series Application Note AN–D9 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction The simple battery backup circuit shown in Figure 1 utilizes Supertex low threshold DMOS devices to achieve excellent efficiency. cells in series, is being charged with a current set by R8 and the

Contextual Info: SCHEMATICS mikromedia for PIC24 We present you with a complete color schematics for mikromedia™ for PIC24® development board. We want you to know what your board is consisted of and how it actually works. E9 VCC-SYS R8 10K HDR1 RD7 RD6 PMRD PMWR RD13

TN0602N3

Abstract: TN2504N8 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT rechargeable battery charging efficiency 007C 1N4001 LM393N 500mAH LM393N battery "lead acid"
Contextual Info: TN06 Series Application Note AN–D9 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction cells in series, is being charged with a current set by R8 and the intrinsic drain to source diode of Q2. For fully discharged batteries, there will be a high charge current for a few seconds, rapidly

op627

Abstract: .47uf 2C266 ad840 pn4250 opa27gp
Contextual Info: 2.94K R1 +14V R4 .47uF 1 1K 33uF C2 Q1 2K C3 +15_FE Q2 1uF AD840J Q_AMP_OUT 2A 2B 10 2C Y 6A 100 D1 33uF + 100 1N758A C7 R8 + V- 3 + 33uF .47uF 100 -15_FE - 2 2.2m 1uF_P 8 T2 Y 6 T1 OP627GP U2 R11 7A 7B .47uF -15_FE 6C 7C .47uF C11 4 6 1uF 6B R13 2.8K C12

TN0602N3

Abstract: BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT diode 1N4001 voltage limitations 1n4001 family INTRINSIC SAFE CIRCUIT 2k resistor 2 watt datasheet 6.8V lead gel battery 007C 1N4001
Contextual Info: TN06 Series Application Note AN–D9 3 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction cells in series, is being charged with a current set by R8 and the intrinsic drain to source diode of Q2. For fully discharged batteries, there will be a high charge current for a few seconds, rapidly

sc979-03

Abstract: rca jacks footprint SC97903 sc979 capacitor 10uf 16v radial EXCCL3225U audio jack 3.5mm surface mounted SigmaTel stac9752 3.5mm jack circuit diagram Sigmatel STAC9753
Contextual Info: 5 4 3 STAC9752_53_MB - Main Board Audio Reference Design. 2 1 REVISION HISTORY: 1 7/08/01 - Original release. 2) 7/15/01 - Increased R8/R9 to 220K for analog jack sense. D D B LINE In C TAD PNONE MONO Out Analog In AC Link Power Conditioning: +5V AVDD +3.3V DVDD

IR R8 MOSFET

Abstract: 1500uF ceramic capacitor vishay FILM CAP Sanyo capacitors 16MV1500WG BAT54H EP2S90 VJ0805Y104KXXA
Contextual Info: National Semiconductor Corp. Designator C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 D1 L1 P1 P2 P3 P4 P5 Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 U1 Stratix II - EP2S90 Vccint Vcore Reference Design Part Type Manufacturer Part No 0.1uF VISHAY VJ0805Y104KXXA 2.2uF TDK C2012X5R0J225

Contextual Info: TS1003 Op Amp Demo Board FEATURES     0.8V to 5.5V Single-supply operation AC-coupled Inverting configuration supplied Fully Assembled and Tested 2mm x 2mm 2-layer demo board COMPONENT LIST DESIGNATION QTY C6 1 R7 1 R6, R10 2 R8, R9 2 U1 1 VDD ,Vin ,Vout ,GND

ceramic capacitor 0.01uf

Abstract: VJ0805Y103KXXA caps 820uf ceramic capacitor vishay CRCW08051331F 0.1uF Capacitor Ceramic ceramic capacitor, .01uF ceramic capacitor, .10nf CRCW08051000F BAT54H
Contextual Info: National Semiconductor Corp. Designator C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 D1 L1 P1 P2 P3 P4 Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 U1 Part Type 0.1uF 2.2uF 0.01uF 10nF 820uF 2.7nF 560uF 560uF 100pF 15nF BAT54H DO3316P-222 Vin 3.3V 1.5V@4A Gnd Gnd SI4838DY SI4838DY 10R

ceramic capacitor 0.01uf

Abstract: ceramic capacitor vishay ceramic capacitor, .1uF CRCW08051000F 15nf capacitor 10nf 6MB820EXR BAT54H DO3316P-222 LM2743
Contextual Info: National Semiconductor Corp. Designator C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 D1 L1 P1 P2 P3 P4 Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 U1 Part Type 0.1uF 2.2uF 0.01uF 10nF 820uF 2.7nF 560uF 560uF 100pF 15nF BAT54H DO3316P-222 Vin 3.3V 1.5V@4A Gnd Gnd SI4838DY SI4838DY 10R

IDT7M135

Contextual Info: 8K x 8 16K x 8 CMOS CMOS DUAL-PORT STATIC RAM MODULE MASTER FEATURES: • • ■ • • • • • • • • High-density 64K/128K CMOS Dual-Port RAM modules 16K x 8 (IDT7M135) o r8 K x 8 (IDT7M134)option Fully asynchronous read/write operation from either port

DA12 16

Abstract: SK1N1 T1-1TCUP RX433 n1 sot23 SDA04HOSK RC0603 Hp TX2 SOT23 2A8 SOT23-BEC
Contextual Info: 4 3 1 2 REVISIONS JP9 DVDD JP15 RXEN_SYNC JP14 D REV DESCRIPTION DATE APPROVED B Customer Version NO Socket 0307.09 JRM D JP58 AWG_RXTXEN 1 TX0 2 RX5 3 RX4 4 RX3 1 DVDD RX2 2 AWG_TXSYNC RX1 3 DSP_RXTXEN RX0 4 10K R16 RC0603 10K R8 RC0603 R9 33 RC0603 JP1 JP2

ceramic capacitor vishay

Abstract: FILM CAP 6MB820EXR BAT54H DO3316P-222 EP2S15 LM2743 SI4838DY VJ0805Y104KXXA DO3316P-222 B
Contextual Info: National Semiconductor Corp. Designator C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 D1 L1 P1 P2 P3 P4 Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 U1 Part Type 0.1uF 2.2uF 0.01uF 10nF 820uF 2.7nF 560uF 560uF 100pF 15nF BAT54H DO3316P-222 Vin 3.3V 1.2V@4A Gnd Gnd SI4838DY SI4838DY 10R