RAD HARD IN MOSFET Search Results

1520-K

Abstract: 60V Single N-Channel HEXFET Power MOSFET mega dot matrix 15-20K Rad Hard for MOSFET
Contextual Info: RAD HARD HEXFET IO R An Introduction to International Rectifier MEGA RAD HARD HEXFET Power MOSFETs Introduction mobility within the channel. This degradation of the channel mobility translates into an increased onstate resistance Rds(on and a decrease in the

Contextual Info: Provisional Data Sheet No. PD-9.1416 International S R e c tifie r IRHNA7064 IRHNA8064 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL M EG A RAD HARD 60 Volt, 0.015 fi, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y

Contextual Info: Data Sheet No. PD-9.732A IN T E R N A T IO N A L R E C T IF IE R IO R AVALANCHE ENERGY AND dv/dt RATED IRHE7110 IRHEB110 HEXFET TRANSISTORS Jt X \ n -c h a n n e l G MEGA RAD HARD 100 Volt, 0.60Q, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD technology

MOSFET SMD N-Channel 30V 100A

Contextual Info: PD-94237D IRHSNA57Z60 RAD-HARD SYNCHRONOUS RECTIFIER • Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 75A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier

Contextual Info: PD-94323A IRHSNA57064 RAD-HARD SYNCHRONOUS RECTIFIER • Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 75A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier

BV 202 0249

Contextual Info: □ata ö ie e : vo. • T.&R IN TERN ATIO N AL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7130 IRHM8130 N -C H A N N EL MEGA RAD HARD 100 Volt, 0.18ft, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARO Technology HEXFETs

Contextual Info: P D -91754 International I R Rectifier IRHNB7Z60 IRHNB8Z60 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N -C H A N N E L M EG A RAD HARD 30Volt, 0.009ft, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y HEXFETs demonstrate immunity to SEE failure. Addi­

2N7269

Abstract: sn78
Contextual Info: Data Sheet No. PD-9.674A IN TERN A TIO N AL RECTIFIER l l O R l REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7850 d IRHMS250 SN7869 JANSRSN7S69 JANSHSN7S69 N -C H A N N EL MEGA RAD HARD 200 Volt, 0.100Q, MEGA RAD HARD HEXFET Product Summary

Contextual Info: Provisional Data Sheet No. PD- 9.1711 International I R Rectifier R EPETITIVE AVALANCHE AND dv/dt RATED IRHG721 4 IRHG8214 HEXFET TRANSISTOR N -C H A N N E L M EGA RAD HARD 250Volt,2.25£2, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD H ARD te c h n o lo g y

Contextual Info: Provisional D atasheet No. P D -9.1711 International IOR Rectifier R E P E T IT IV E A V A L A N C H E A N D dv/dt R A T E D IRHG7214 IRHG8214 HEXFET TRANSISTOR N -C H A N N E L MEGA RAD HARD 250Volt, 2.25Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y

Contextual Info: Provisional Data Sheet No. PD - 9.1564B International TOR Rectifier IRHM7064 IRHM8064 R E P E T IT IV E A V A LA N C H E A N D d v /d t R A TED HEXFET TRANSISTOR N -C H A N N E L MEGA RAD HARD 60 Vo It, 0.021 Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y

IRHM9130

Abstract: P-channel HEXFET Power MOSFET H265
Contextual Info: Data Sheet No. PD-9.888 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM913Q P-CHANNEL RAD HARD -100 Volt, 0.30&, RAD HARD H EXFET In te rn atio n al R e ctttle r’s P -C hannel RAD H A R D Technology HEXFETs d e m on strate excellen t th re sh o ld voltag e s ta b ility and

ic 812a

Abstract: Zbf 34 ALPs vcr IRHG6110 T573 3 controlled rectifier
Contextual Info: Data Sheet No. PD-9.812A IN T E R N A T IO N A L R E C T IF IE R I Q R AVALANCHE ENERGY AND dv/dt RATED H EX FET T R A N S IS T O R S iR H G e in o COMBINATION OF RAD HARD N-CHANNEL AND P-CHANNEL [2 EACH POWER MOSFETb RAD HARD 14 LEAD DUAL-IN-LINE QUAD

Contextual Info: Provisional Data Sheet No. PD - 9.1394C International I R Rectifier IRHM7460SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 500Volt, 0 .3 2 a (SEE) RAD HARD HEXFET International Rectifier's (SEE) RAD HARD technology

Contextual Info: International I R Rectifier Provisional Data Sheet No. PD-9.1475 REPETITIVE AVALANCHE AND dv/dt RATED IRHI7460SE HEXFET TRANSISTOR N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 500 Volt, 0.32Q, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technol­

Contextual Info: s Provisional Data Sheet No. PD-9.1398A International IOR Rectifier IRHNA7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 400 Volt, 0.200, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology

HEXFETs FETs

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.1475 REPETITIVE AVALANCHE AND dv/dt RATED IRHI7460SE HEXFET TRANSISTOR N-CHANNEL _ S IN G L E E V E N T E F F E C T S E E R A P H A R D 500 Volt, 0.32£2, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technol­

LGAA

Abstract: mark A15 sot-23-6 MIC5219BM5 LGAA A12A LDXX WM Mark code negative VOLTAGE REGULATOR sot 23-6 A16 SOT
Contextual Info: You are in Databook Vol. 1 • Click for Main Menu Part Identification Packaged Devices MIC XXXX -01 A E B Q Micrel or Standard Prefix Qualification Option H4 = Rad Hard, 1x104 rad Si Q = Class B or S Part Number Speed/Bonding Option only use when required

eltek flatpack

Abstract: mosfet 407 sot-23-5 op amp or regulator mark A15 sot-23-6 LBAA sot-23 M6 negative VOLTAGE REGULATOR sot 23-6 SOT23 m6 sot-23-5 a13
Contextual Info: You are in Databook Vol. 3 • Click for Main Menu Part Identification Packaged Devices MIC XXXX -01 A E B Q Micrel or Standard Prefix Qualification Option H4 = Rad Hard, 1x104 rad Si Q = Class B or S Part Number Speed/Bonding Option only use when required

1E14

Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3 iodine Rad Hard in Fairchild for MOSFET
Contextual Info: FSPYC264R, FSPYC264F Data Sheet 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.1313A IRHN7450SE REPETITIVE A V A LA N C H E AN D dv/dt RA TED HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500 Volt, 0.510 , (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology

1E14

Abstract: 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3 diode vg 902 c2
Contextual Info: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

Contextual Info: FSPS130R, FSPS130F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

Contextual Info: FSPL130R, FSPL130F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the