RB162L Search Results

rb162l

Abstract: RB162L-60
Contextual Info: Schottky Barrier Diode RB162L-60 Dimensions Unit : mm Land size figure (Unit : mm) 2.0 2.0 Applications General rectification 4.2 Features 1) Small power mold type. (PMDS) 2) High switching speed 3) Low forward voltage PMDS Construction Silicon epitaxial planer

Contextual Info: Schottky Barrier Diode RB162L-60TF Datasheet AEC-Q101 Qualified lLand size figure Unit : mm lDimensions (Unit : mm) lApplication 2.0 2.6±0.2 ① ② 0.1±0.02 0.1 4.2 96 5.0±0.3 1) Small power mold type. 6 4 4.5±0.2 lFeatures 1.2±0.3 2.0 General rectification

Contextual Info: Schottky Barrier Diode RB162L-60 Datasheet lDimensions Unit : mm lApplication 2.0 2.6±0.2 ① ② 0.1±0.02 0.1 4.2 96 5.0±0.3 1) Small power mold type. 6 4 4.5±0.2 lFeatures 1.2±0.3 2.0 General rectification lLand size figure (Unit : mm) (PMDS)

RB-162

Abstract: RB162L-40
Contextual Info: Data Sheet Schottky Barrier Diode RB162L-40 Dimensions Unit : mm Applications General rectification Land size figure (Unit : mm) 2.0 4.2 0.1±0.02 0.1 ② 5.0±0.3 2 ① 1.2±0.3 4 4.5±0.2 Features 1)Small power mold type. (PMDS) 2)High reliability.

Contextual Info: Data Sheet Schottky Barrier Diode RB162L-40 Applications General rectification Dimensions Unit : mm Land size figure (Unit : mm) 2.0 4.2 0.1±0.02 0.1 ② 5.0±0.3 2 ① 1.2±0.3 4 4.5±0.2 Features 1)Small power mold type. (PMDS) 2)High reliability.

Contextual Info: Data Sheet Schottky Barrier Diode RB162L-60 Dimensions Unit : mm Land size figure (Unit : mm) 2.0 2.0 Applications General rectification 4.2 Features 1) Small power mold type. (PMDS) 2) High switching speed 3) Low forward voltage PMDS Construction

RB050M-30

Abstract: RSX201VA-30 RB080L-30 RSBC6.8CS RSAC6.8CS RB055L-30 RB050M RSAC16CS EDZ TE61 27B ROHM tfz diodes
Contextual Info: 2010 Product Catalog Discrete Semiconductors Schottky Barrier Diodes Zener Diodes Schottky Barrier Diodes Original fine process technology and a unique device structure have enabled ROHM to develop Schottky barrier diodes that feature simultaneously low VF and IR - an unprecedented accomplishment