RBE BD135 Search Results

8D139

Abstract: BDL39 bdxxx BD137 BD139 power transistor bd137 Transistor 80139 BD135 bd139 bd140 power transistor bd139
Contextual Info: BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n transistors in SOT-32 plastic envelope, recommended for driver stages in hi-fi amplifiers and television circuits. The BD136, BD138 and BD140are complementary to the BD135, BD137 and BD139 respectively.

Contextual Info: BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA

BUV47

Abstract: BUV47A rBE BD135 2N2222 2N2904 BD135 BD136 BY205-400 D44H11 D45H11
Contextual Info: BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA

U/25/20/TN26/15/850/power transistor bd135

Contextual Info: BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability This model is currently available, but not recommended for new designs. For more information, see http://bourns.com/data/

buv48 equivalent

Abstract: BUV48 BY205-400 2N2222 2N2904 BD135 BD136 BUV48A D44H11 D45H11
Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

BD139 amplifier

Abstract: rBE BD135 BD135 BD135,BD137,BD139 BD139 BD137 power transistor bd137
Contextual Info: BD135…BD139 NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol BD135 BD137 BD139 Unit Collector Emitter Voltage VCEO 45 60

Contextual Info: BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol Value BD135T BD137T BD139T Unit Collector Emitter Voltage

Contextual Info: BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol Value BD135T BD137T BD139T Unit Collector Emitter Voltage

BD135,BD137,BD139

Abstract: BD139 TRANSISTOR NPN BD139 BD139 amplifier BD139 NPN rBE BD135 BD135 BD137
Contextual Info: BD135, BD137, BD139 NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol BD135 BD137 BD139 Unit Collector Emitter Voltage

BD139 amplifier

Abstract: rBE BD135 BD135 BD137 BD139 BD139 NPN transistor
Contextual Info: BD135…BD139 NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol BD135 BD137 BD139 Unit Collector Emitter Voltage VCEO 45 60

BUV48A

Abstract: buv48
Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability This model is currently available, but not recommended for new designs. For more information, see http://bourns.com/data/

BUV47

Abstract: BUV47A 2N2222 2N2904 BD135 BD136 BY205-400 D44H11 D45H11 2N2222 hfe
Contextual Info: BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA

BUV48

Abstract: BUV48A 2N2222 2N2904 BD135 BD136 BY205-400 D44H11 D45H11
Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

BUV48A

Abstract: buv48
Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

BUV47

Abstract: 2N2222 2N2904 BD135 BD136 BUV47A BY205-400 D44H11 D45H11
Contextual Info: BUV47, BUV47A NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability AUGUST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE

BD139 N

Abstract: BD139 bd135 N BD135-BD137-BD139 BD136-BD138-BD140 BDXXX BD135 BD137 BD139 PIN DATA BD135,BD137,BD139
Contextual Info: NPN BD135 – BD137 – BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS. The BD135-BD137-BD139 are NPN Transistors They are recommended for driver stages in hi-fi amplifiers and television circuits. They are mounted in Jedec TO-126 plastic package. PNP complements are BD136-BD138-BD140.

BUV48V

Abstract: by205 diode BY205-400 diode by205 BUV48 buv48 equivalent by205 TRANSISTOR D 1978 diode by205 400 TRANSISTOR 2n2904
Contextual Info: BUV48, BUV48A NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability AUGUST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE

CDIL BD140

Abstract: CDIL BD139 CDIL BD138 bd139 pin out CDIL BD139 pnp BD136 of BD140 CDIL BD136 transistors bd136 BD135
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package EC B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139

CDIL BD139

Abstract: CDIL BD137 CDIL BD140 bd139 cdil bd140 pin out BD139 amplifier BD137 parameters BD139 PIN DATA rBE BD135 BD137
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package EC B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package EC B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139

CDIL BD137

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package EC B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140

40 pin J004

Abstract: transistor bd135
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and

bd135 equivalent

Abstract: bd135 input impedance rBE BD135 resistor 2,2
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line TP3062 UHF Power Thransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including

Contextual Info: MOTOROLA Order this document by TP3021/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3021 The TP3021 is designed for 24 V common emitter base station amplifiers. Operating in the 820 – 960 MHz bandwidth, it has been specifically designed for