RCA OUTLINE W Search Results

C30971EL

Contextual Info: E G & G/CANADA/O PTOE LEK ItC JI 303Qbl0 ÜDDDBS4 TDT • CANAT"'- ET Electro Optics and Devices 4^/- S ' / Solid State Detectors Developmental Types C30971 E, C30971 EL Photodiodes Silicon Photodetectors for High-Speed, Wide Bandwidth Applications ■ Spectral Response Range - 10% Points - 400 to 1000 nm

C30116

Abstract: RCA Solid State C30116/F
Contextual Info: E G & G/CANADA/OPTOELEK 3D3GblO G00D013 SSM « C A N A ID • W f f e J V Electro Optics l l l i f I and Devices Solid State Emitters Developmental Type C30116, C30116/F 1060 nm Indium Gallium Arsenide Infrared Surface Emitters for Pulsed or Continuous DC Operation

Contextual Info: E G & G/CANADA/OPTOELEK ID D 3030bl0 OOOG1SS I t c / l Optics «CANA t - w Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm

Contextual Info: E G & G/CANADA/OPTOELEK ID î • 3ü30blü G O O O i n ItC ilElectro 123 M C A N A T-W S i Photodiode C30895 DATA SHEET Optics Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Power NEP at 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.

Contextual Info: E G & G / CANADA/OPTOELEK IO D a o a O b l D DDDD1S7 7 3 7 B C A N A VtCil Optics Si Photodiode C30974E DATA SHEET Rectangular Silicon Avalanche Photodiode Preamplifier Module • Responsivity at TA « 25°C 3.7 x 10s V/W at 900 nm — 1.8 x 10s V/W at 1060 mn

TV Wireless Mini

Abstract: wireless vga circuit receiver transmitter 1.2 ghz video 15 pin vga to video out rca video vga to composite convert radio av receiver wireless av transmitter video transmitter 2.4 GHz portable dvd player vga to rca circuit
Contextual Info: AITech ProPC/TV Wireless Mini USER’S MANUAL FEDERAL COMMUNICATIONS COMMISSION This device complies with Part 15 of the FCC Rules Operation is subject to the following two conditions: this device may not cause harmful interference, and 2 this device must accept any interference received, including interference that

photodioda

Abstract: N10-13 laser rca rca 210 C30895
Contextual Info: 1GE D • I 74fi4b75 D D O D i n A INC/ ELECTRO OPTICS VICil H I Photodiode C30895 DATASHEET Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Pow er NEP a t 1060 n m — 7.5 x 1 0 14 W /Hz1'2 max.

Contextual Info: ; 8. 6 / C A N A D A / O P T O E L E K n • m lOE D 3D3üblG OOQOOn ô ■ CANA 7^/-¿>7 ÆM Electro W # InGaAsP Infrared Emitters ■ Optics 1300 nm L E D S E R IES DATA S H EET C86057E SERIES - Dual-in-Line package Single or multimode fiber C86013E - Coaxial package multimode fiber

C30817

Abstract: C30954E ISO-9001-87 C30872 C30916E c30954 C30956E C30956 c30955e avalanche photodiodes
Contextual Info: J L ,E G slG CANADA LTD. Optoelectronics Divisio Formerly i t C A Effective January 1,1991 ISO-9001-87 Cert *001975 Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications

Contextual Info: E G R & ID G/CANADA/OPTOELEK C / Optics 1 D • 303Gblü □□OOG'ÌS ^50 M C A N A ^ InGaAs Photodiodes C30620 Series DATA SHEET Long Wavelength Photodiode For Detection of 1000 to 1700 NM Radiation Pream plifier Front End With or Without Integral Fiber Optic Pigtails

Contextual Info: E G & G/CANAD A/O PTOELEK IO D • 303DblQ DOODObS «Ì22 H C A N A C86051E Series GaAIAs Injection Lasers T -w -ù s Developmental Types 800-900 nm Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation With Integral Fiber Optic Output Cables and Connectors

LS7094

Abstract: 2l688
Contextual Info: E G & G/CANADA/OPTOELEK ItCJl 303DblD □□□□□27 7 « C A N A IDE D Electro Optics and Devices Solid State Emitters Developmental Types C86039E, C86040E Series Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation at Room Temperature Wavelength of Peak Radiant Intensity

photodiode demodulation

Abstract: EG*G Optoelectronics rca 036 C30957E
Contextual Info: ^Ü^EG kG CANADA LTD. Optoelectronics Division Wr$ï- Formerly; ItC il W Effective January 1, 1991 :tro ics Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm

Contextual Info: G & G / CANADA/OPTOELEK Æ• n ■ m 10E D ■ Electro b # ■ Optics *1 :ï ■a T C86045EV1 M C86045EV2 The RCA C86045 and C86053 series are InGaAsP laser diodes designed specifically for fiber optic test systems. The output wavelength 1300 nm is well

Contextual Info: G 8. G / C A N A D A / O P T O E L E K Electro Optics 2TE D 3D3DblD 00002b0 2 T Z¿/ / ~ O S ^ IC A N A C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET • V ■ ■ ■ ■ Operation at 200ns pulse duration and 5 kHz repetition rate High Peak Output Power:

eMMC

Abstract: emmc spec samsung eMMC 4.5 emmc 4.5 spec emmc operation emmc Initialization KMCME0000M emmc 5.0 emmc 4.5 emmc spec samsung
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

varian klystron

Abstract: UG-573 B568 klystron 1CE-279A klystron varian RCA-8568 8568 two cavity klystron klystron tubes
Contextual Info: 8568 Super-Power Klystron FIVE-RESONATOR, F I X E D - T U N E D , M A GN E TI CA LL Y- FO C US E D WATER-COOLED TYPE 2 1-MEGAWATT PEAK PULSE OUTPUT AT 285 6 M c / s For RF-Pulsed Amplifier inS-Band Accelerator Linear Service ELECTRICAL Heater, f o r M a trix -T y p e O x ide -C oa te d

Contextual Info: 4637 Beam Power Tube CERMOLOX R F Power A m p lifier and O s c illa to r to 1215 MHz M atrix-T yp e Cathode 340 Watts CW Power Output 105 Watts CW Power at 400 MHz Output a t 1215 MHz Conduction Cooled E L E C T R IC A L H eater for Matrix-Type Oxide-Coated

Contextual Info: HIGH-VACUUM PHOTOTUBE WITH ANODE T E R M I N A L CAP C athode Sem i-cy1 in d r ic a l Photosu rfa c e Window A rea D ir e c t In t e r e le c t r o d e C a p a cita n ce Maximum O v e r a ll Length Maximum Seated H eigh t Maximum D iam eter B uib 1 ime g l a s s

CMD13

Abstract: CMD18 CMD58 CMD7
Contextual Info: OKI Semiconductor P2ROM MMC FEDR57T00801G-02-01 Issue Date: March 31, 2004 P2ROM MultiMediaCard 1. GENERAL DESCRIPTION P2ROM MMC stands for P2ROM MultiMediaCard in which an Oki Original Product P2ROM is embedded. P2ROM Production Programmed ROM utilizes Oki unique memory cell, which is an exclusive Oki technology.

oki cross

Abstract: CMD13 CMD16 CMD17 MR57T00801G MMCA 4.3
Contextual Info: OKI Semiconductor P2ROM MMC FEDR57T00801G-02-01 Issue Date: March 31, 2004 P2ROM MultiMediaCard 1. GENERAL DESCRIPTION P2ROM MMC stands for P2ROM MultiMediaCard in which an Oki Original Product P2ROM is embedded. P2ROM Production Programmed ROM utilizes Oki unique memory cell, which is an exclusive Oki technology.

CMD23

Abstract: CMD13 CMD58 oki cross CMD16 CMD17 MR57T01601J CMD11
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

CMD58

Abstract: CMD18 cmd23 set_block_count
Contextual Info: OKI Semiconductor MR57T01601J PEDR57T01601J-02-03 Issue Date: September 17, 2004 Preliminary P2ROM MultiMediaCard 1. GENERAL DESCRIPTION P2ROM MMC stands for P2ROM MultiMediaCard in which an Oki Original Product P2ROM is embedded. P2ROM Production Programmed ROM utilizes Oki unique memory cell, which is an exclusive Oki technology.

cmd23 set_block_count

Abstract: CMD58
Contextual Info: OKI Semiconductor MR57T00801G FEDR57T00801G-02-02 Issue Date: June 25, 2004 P2ROM MultiMediaCard 1. GENERAL DESCRIPTION P2ROM MMC stands for P2ROM MultiMediaCard in which an Oki Original Product P2ROM is embedded. P2ROM Production Programmed ROM utilizes Oki unique memory cell, which is an exclusive Oki technology.