RD RAM DRAWING Search Results

TC51V18165

Abstract: TC51V18165CFT
Contextual Info: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC51V18165 C J/C FT - 60 SILICON GATE CMOS DATA TENTATIVE DATA 1,048,576 W O RD x 16 BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC51V18165CJ/CFT is EDO (hyper page) dynamic RAM organized 1,048,576 words by 16 bits.

ic 3254

Abstract: D46258
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD46258,46259L 256K-BIT BiCMOS FAST STATIC RAM 32K-WORD BY 8-BIT/32K-WORD BY 9-BIT Description The /JPD46258 is 262,144 b its 32,768 w o rd s by 8 bits and the /iPD46259L is 294,912 b its (32,768 w o rd s by 9 b its) BiCMOS sta tic RAMs.

MC-428LFC72FB-A60

Abstract: MC-428LFC72FH-A60 50A16
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-428LFC72 3.3V OPERATION 8M -W O RD BY 72-B IT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The M C -428LFC72 is a 8,388,608 w ords by 72 bits dynam ic RAM module on which 9 pieces of 64 M DRAM: /iP D 4265805 are assembled.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD434008 4M-BIT CMOS FAST STATIC RAM 512K-WORD BY 8 BITS Description The /JPD434008 is a high speed, lo w pow er, 4 194 304 bits 524 288 w o rd s by 8 bits CMOS static RAM. The / jPD434008 is packed in 36-pin plastic SOJ.

ud46

Abstract: UPD46258
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 6 2 5 8 ,4 6 2 5 9 L 256K-BIT BiCMOS FAST STATIC RAM 32K-WORD BY 8-BIT/32K-WORD BY 9-BIT Description The /¿PD46258 is 262,144 bits 32,768 w o rd s by 8 bits and th e ¿iPD46259L is 294,912 b its (32,768 w o rd s

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S2LFB64S 3.3 V OPERATION 2M -W O RD BY 64-B IT DYNAM IC RAM M ODULE SO DIM M , EDO Description The M C -42S2LFB64S is a 2,097,152 w ords by 64 bits dynam ic RAM module (Small Outline DIMM) on which 8 pieces of 16 M DRAM: /¿PD42S17805L are assembled.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-42S4000LAB32S SERIES 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The M C -42S4000LAB32S series ¡s a 4,194,304 w o rd s by 32 b its d yn a m ic RAM m o d u le (S m a ll O u tlin e D IM M )

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The ^PD 431009 is a high speed, low pow er, 1 179 072 bits 131 072 w o rd s by 9 bits C M O S static RAM. The ¿iPD431009 is packed in 36-pin plastic SOJ.

IC-3237

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The /¿PD431009 is a high speed, lo w p o w e r, 1 179 072 b its 131 072 w o rd s by 9 b its CMOS sta tic RAM. The ¿iPD431009 is packed in 36-pin p la stic SOJ.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / MC-42S4000LAB32S SERIES 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description T he M C -42S4000LAB32S series is a 4,194,304 w o rd s by 32 b its d y n a m ic RAM m o d u le (S m a ll O u tlin e D IM M )

TC51V16405

Abstract: TC51V16405c
Contextual Info: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The TC51V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The

d431008

Contextual Info: DATA SHEET Æ MOS INTEGRATED CIRCUIT C ¿¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The ¿iPD431008 is a high speed, lo w po w e r, 1 048 576 b its 131 072 w o rd s by 8 bits CMOS s ta tic RAM. The jt/PD431008 is packed in 32-pin p la stic SOJ.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000LAB72F 3.3 V OPERATION 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-422000LAB72F is a 2,097,152 w o rd s by 72 bits d yn a m ic RAM m o d u le on w h ic h 9 pieces o f 16 M DRAM: jUPD4217800L are assem bled.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000AA64FB 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C -421000AA64FB is a 1,048,576 w o rd s by 64 b its d y n a m ic RAM m o d u le on w h ic h 4 pieces o f 16 M DRAM : /iPD4218160 are asse m bled .

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CA724 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description T h e M C -4 58C A 72 4 is a 8,3 8 8 ,6 0 8 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w hich 9 p iece s of 64M

4cmv

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-454BA80 4M-W ORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The M C -4 54B A 80 is a 4 ,1 9 4 ,3 0 4 w o rd s by 80 b its syn ch ro n o u s d yn a m ic RAM m odule on w hich 20 p ie ce s of 16 M

MC-421000AA64FB-70

Abstract: MC-421000AA64FB-60
Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT M C -421000A A 64FB 1 M-WORD BY 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C -421000AA64FB is a 1,048,576 w o rd s by 64 b its d y n a m ic RAM m o d u le on w h ic h 4 pieces o f 16 M DR AM : /¿PD4218160 are assem bled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description T he M C -4 516 D A 7 2 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w h ich 18 pieces o f 64M

nec 4217400

Abstract: D42S17400 4216400 NEC 4217400-60 4217400-60
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT r//PD42S16400,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION T he ¿¿PD42S16400, 4216400, 42S17400, 4217400 are 4 194 304 w o rd s by 4 bits d y n a m ic CMOS RAM s. These d iffe r in refresh cycle and th e /¿PD42S16400, 42S17400 can execute CAS before RAS s e lf refresh and

Contextual Info: tiM27SSS □ □ 4 1 b cl2 2TÛ ATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S4800L, 424800L 3.3 V OPERATION 4 M BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The ^PD42S4800L, 424800L are 524 288 w o rd s b y 8 b its d yn a m ic CMOS RAM s. The fa st page m ode ca p a b ility

Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT M C-421000A32 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description Th e M C -4 210 00A 32 is a 1,0 48,5 76 w o rd s by 32 b its dyn am ic RAM m o d u le on w hich 8 p ie ce s of 4 M DRAM: ¿/PD424400 are assembled.

Contextual Info: NEC MOS INTEGRATED CIRCUIT /¿PD42S16400L; 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 w o rd s by 4 bits dyn am ic CMOS RAMs.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S 16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAM s. These d iffe r in refresh cycle and th e ¿¿PD42S16800, 42S17800 can exe cute CAS be fore RAS se lf refresh.