RD60HUF Search Results

RD60HUF1-101

Abstract: RD60HUF High frequency P MOS FET transistor 60W POWER AMPLIFIER CIRCUIT
Contextual Info: < Silicon RF Power MOS FET Discrete > RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION RD60HUF1 is a MOS FET type transistor specifically DRAWING 25.0+/-0.3 designed for UHF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3

transistor b 1624

Abstract: b 1624 transistor transistor A 1568 MITSUBISHI RF POWER MOS FET Pch MOS FET 100OHM RD60HUF1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 24.0+/-0.6 FEATURES 4-C2 •High power and High Gain:

RD60HUF1

Abstract: 100OHM ZO-10 Rf power transistor mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.

100OHM

Abstract: RD60HUF1 RD60HUF1-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.

Contextual Info: ATTENTION O B SE R V E PR EC A U T IO N S FOR HANDLING e l e t r o s t a t ic TENTATIVE MITSUBISHI RF POWER MOS FET RD60HUF1 SENSITIVE D E V IC E S OUTLINE DESCRIPTION DRAWING RDéOHUFï is a MO^J FJ3T type transistor specifically designed for UHF High power amplifiers applications-

Contextual Info: < Silicon RF Power MOS FET Discrete > RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION RD60HUF1 is a MOS FET type transistor specifically DRAWING 25.0+/-0.3 designed for UHF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3

RD60HUF1-101

Abstract: Rf power transistor mosfet UHF transistor FET 100OHM RD60HUF1 PINw10 transistor A 1568 mitsubishi 250
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.

RD60HUF

Abstract: mitsubishi rf 100OHM RD60HUF1 RD60HUF1-101
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.

lv 5682

Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
Contextual Info: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically

RD100HHF1

Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
Contextual Info: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V

RM15TB-H

Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
Contextual Info: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;