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    RE1C002UN Search Results

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    RE1C002UN Price and Stock

    ROHM Semiconductor RE1C002UNTCL

    MOSFET N-CH 20V 200MA EMT3F
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    DigiKey () RE1C002UNTCL Cut Tape 421,921 1
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    RE1C002UNTCL Digi-Reel 421,921 1
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    RE1C002UNTCL Reel 420,000 3,000
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    Mouser Electronics RE1C002UNTCL 21,302
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    Verical () RE1C002UNTCL 242,862 1,276
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    RE1C002UNTCL 81,000 3,000
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    RE1C002UNTCL 26,261 1,613
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    RE1C002UNTCL 3,000 1,250
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    Newark () RE1C002UNTCL Cut Tape 10,205 1
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    RE1C002UNTCL Reel 3,000
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    Bristol Electronics RE1C002UNTCL 2,305 34
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    Quest Components () RE1C002UNTCL 21,008
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    RE1C002UNTCL 1,844
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    RE1C002UNTCL 94
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    TTI RE1C002UNTCL Reel 15,000 3,000
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    TME RE1C002UNTCL 3,709 1
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    Ameya Holding Limited RE1C002UNTCL 5,130 1
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    Chip 1 Exchange RE1C002UNTCL 17,089
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    Avnet Asia RE1C002UNTCL 15,000 16 Weeks 3,000
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    Avnet Silica RE1C002UNTCL 19 Weeks 3,000
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    Chip One Stop RE1C002UNTCL Cut Tape 242,862 0 Weeks, 1 Days 50
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    IBS Electronics RE1C002UNTCL 36,000 3,000
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    New Advantage Corporation RE1C002UNTCL 114,000 1
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    Win Source Electronics RE1C002UNTCL 351,205
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    ROHM Semiconductor RUE002N02TL

    MOSFETs Sm Signal, Sw MOSFET N Chan, 20V, 0.2A
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    TTI RUE002N02TL Reel 180,000 3,000
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    RE1C002UN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    RE1C002UNTCL
    		Rohm Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 0.2A EMT3 Original PDF 2.56MB

    RE1C002UN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: RE1C002UN Nch 20V 200mA Small Signal MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 1.2W ID 200mA PD 150mW lFeatures EMT3F (3) (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.


    Original     		RE1C002UN 200mA 200mA 150mW R1120A PDF

    Contextual Info: RE1C002UN Datasheet Nch 20V 200mA Small Signal MOSFET lOutline VDSS 20V RDS on (Max.) 1.2W ID 200mA PD 150mW lFeatures EMT3F (3) (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.


    Original     		RE1C002UN 200mA 150mW R1120A PDF

    MARKING 68W

    Abstract: RE1C002UN
    Contextual Info: RE1C002UN RE1C002UN Datasheet Nch 20V 200mA Small Signal MOSFET lOutline VDSS 20V RDS on (Max.) 1.2W ID 200mA PD 150mW lFeatures EMT3F (3) (1) (2) lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.


    Original     		RE1C002UN 200mA 150mW R1120A MARKING 68W RE1C002UN PDF