RECTIFIER 15A, 500V Search Results

Contextual Info: ADVANCED PO W ER Te c h n o l o g y 1 - Cathoda 2 - Anode Back of Case - Cathode APT15D60K APT15D50K 600V 500V 15A 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE P R O D U C T A P P L IC A T IO N S PRODUCT FEATURES P R O D U C T B E N E F IT S • Anti-Parallel Diode

DUT1505

Abstract: DUT1505-AG DUT1505AL DUT1505ALN DUT1505-GG DUT1505S silicon carbide
Contextual Info: August 2009 DUT1505 – 500V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

DUL1505

Abstract: DUL1505-AG DUL1505AL DUL1505ALN DUL1505-GG DUL1505S
Contextual Info: August 2009 DUL1505 – 500V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

NS1005

Contextual Info: ¿ O A d v a n c ed P o w er T e c h h o lo g t • * 1 • Cathode 2 -Anode Back of Caaa-Cathoda APT15D60B APT15D50B 600V 500V 15A 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PR O D U C T A PP LIC A T IO N S P R O D U C T F E A TU RE S P R O D U C T B ENEFITS

Contextual Info: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFT15N100Q3 IXFH15N100Q3 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 15A Ω ≤ 1.05Ω ≤ 250ns TO-268 (IXFT) G S Symbol Test Conditions

1N3208(R)

Contextual Info: 1N3208 R T HR U 1N3214A(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODE STUD TYPES Features 15A 15 Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM DO-5 Maximum Ratings Operating Temperature: Storage Temperature: Part Number

IXFH15N100Q3

Abstract: IXFT15N100Q3
Contextual Info: Advance Technical Information IXFT15N100Q3 IXFH15N100Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 15A Ω ≤ 1.05Ω ≤ 250ns TO-268 (IXFT) G S D (Tab) Symbol Test Conditions

NTE5953

Abstract: NTE5942 NTE5944 NTE5948 NTE5952 NTE5945 NTE5940 NTE5941 NTE5943 NTE5946
Contextual Info: NTE5940 thru NTE5953 Silicon Power Rectifier Diode, 15 Amp Description and Features: D Low Thermal Impedance D High Case Temperarure D Excellent Reliability D Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics: Average Forward Current TC = +150°C Max , IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Contextual Info: 1N3208 R THRU 1N3214(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODES STUD TYPE 15A Features High Surge Capability 15Amp Rectifier 50-600 Volts Types up to 600V V RRM DO-5 Maximum Ratings Operating Temperature: -65 C to +175 B Storage Temperature: -65 C to +175

RURP1S60

Abstract: RURP880 RURP3080 ULTRAFAST 600V RURG8040 MUR810 MUR1550
Contextual Info: 5-3 ULTRAFAST SINGLE DIODES Selection Guide Continued HARRIS ULTRAFAST RECOVERY RECTIFIER PRODUCT LINE 2 LEAD TO-247 TO-220AC ' f <AVG) 15A SINGLE LEAD TO-21B •f <AVG> 30A 30A ^F(AVQ) 75A/B0A 50A 50A 75A/80A Vrrm BA 100A 150A 100V MUR810 RURP810 MUR1510 RURP3010 RURG3010

ICE3B0365J

Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)

Contextual Info: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFT30N50Q3 IXFH30N50Q3 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 500V = 30A Ω ≤ 200mΩ TO-268 (IXFT) G S Symbol Test Conditions D (Tab) Maximum Ratings

IXFH30N50Q3

Contextual Info: Advance Technical Information IXFT30N50Q3 IXFH30N50Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 500V = 30A Ω ≤ 200mΩ TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings

bridge rectifier 24V AC to 24v dc

Abstract: 1N5408 smd diodes GSIB1560
Contextual Info: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4

500V N-Channel IGBT TO-3P

Abstract: IRGP430U
Contextual Info: PD - 9.780 IRGP430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V

transistor C632

Abstract: igbt 500V 15A c632 DIODE c630 diode IRGB430UD2 C632
Contextual Info: P D - 9.1067 bitemational [ïôr |Rectifier IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c es = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

Contextual Info: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,

C583

Abstract: D-12 IRGB430U C586
Contextual Info: PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V

D-12

Abstract: IRGB430U
Contextual Info: PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V

OM6021SC

Abstract: OM6022SC OM6023SC OM6021
Contextual Info: OM6021SC OM6023SC OM6022SC OM6024SC POWER MOSFETS IN HERMETIC PACKAGE 100V T hru 500V, Up To 35 Am p, N-Channel Power MOSFETs In JEDEC TO-259AA Package FEATURES • Isolated Side-Tab Hermetic Metal Package • Fast Switching, Low Drive Current • Ease of Paralleling For Added Power

bridge rectifier single phase 240V AC

Abstract: 220v 100a diode bridge mosfet 3kw PFC 3kw 3kw mosfet 3kw pfc bridge rectifier 240V AC TRANSISTOR 3kw 220v 25a diode bridge bridge rectifier 240V AC 240v dc
Contextual Info: LMH5010RB 500V 35A APPLICATION SPECIFIC POWER MODULE FOR 3KW CONVERTER PRODUCT DESCRIPTION The LMH5010RB is an Application Specific Power Module ASPM that integrates all the necessary power functions to build a converter, up to 3KW, with a 220/240V AC input. System design time is dramatically

igbt inverter welder schematic

Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field

BYC15-600

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYC15-600 DIODE RECTIFIER DIODE, HYPERFAST „ DESCRIPTION The UTC BYC15-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC15-600 is suitable for half-bridge lighting ballasts,