RELIABILITY OF HIGH POWER BIPOLAR DEVICES Search Results

Reliability of High Power Bipolar devices

Abstract: IEC60747-6 IEC60749-25 IEC60749 IEC60749-23 IEC60749-34 what is the drawback of operating system IEC60749-12 thyristor handbook design IEC60068-2-14
Contextual Info: AN 5948 Reliability of High Power Bipolar Devices Application Note AN5948-2 September 2009 LN26862 Authors: Dinesh Chamund, Colin Rout INTRODUCTION We are often asked “What is the MTBF or FIT rating of this diode or that thyristor?” We cannot answer this without knowing how the

Contextual Info: 36VHigh-performance, High-reliability Withstand Voltage Stepping Motor Driver BD63710AEFV ●General Description BD63710AEFV is a bipolar low-consumption driver that driven by PWM current. Rated power supply voltage of the device is 36 V, and rated output current is 1.0 A.

Contextual Info: 36VHigh-performance, High-reliability Withstand Voltage Stepping Motor Driver BD63715AEFV ●General Description BD63715AEFV is a bipolar low-consumption driver that driven by PWM current. Rated power supply voltage of the device is 36 V, and rated output current is 1.5 A.

toy motor 1.5 to 3 v datasheet

Contextual Info: 36VHigh-performance, High-reliability Withstand Voltage Stepping Motor Driver BD63720AEFV ●General Description BD63720AEFV is a bipolar low-consumption driver that driven by PWM current. Rated power supply voltage of the device is 36 V, and rated output current is 2.0 A.

Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

SZP-5026

Abstract: 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 SZP-5026Z MLCC rework recommended land pattern for 0402 cap e483
Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

SOF-26

Abstract: SZP-5026 SZP-5026Z 5.7Ghz low noise amplifier 600S4R7
Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

600S4R7

Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250
Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

SZP-5026-HWD

Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

Contextual Info: Power MOSFET Construction and Characteristics Power MOSFET in Detail 2. Construction and Characteristics Since Power MOSFETs operate principally as majority carrier devices, adverse influences are relatively small magnitude or importance. This is in contrast to the situation with minority carrier

flyback samsung

Abstract: flyback transformer samsung
Contextual Info: INTRODUCTION TO SAMSUNG’S SFET FAMILY Since the introduction of the first Power MOSFET products in the mid-70's, these devices have emerged as widely ac­ cepted components in medium-to-high frequency power control applications. Advances in Doubled Diffused MOS DMOS

flyback samsung

Abstract: flyback 1000w SMPS 1000W smps design 1000w
Contextual Info: INTRODUCTION TO SAMSUNG’S SFET FAMILY Since the introduction of the first Power MOSFET products in the m id-70’s, these devices have emerged as widely ac­ cepted components in mediunv-to-high frequency power control applications. Advances in Doubted Diffused MOS DMOS

tda7851

Abstract: tda7388 TDA7385H 4x50W tda7563H tda7561h 500w audio tda7388 2x40w 4X45W tda7570
Contextual Info: Power ICs for car infotainment From audio power amplifiers to power management devices STMicroelectronics is one of the world’s leading suppliers of power integrated circuits ICs in the field of car infotainment, and the recognized market leader in power

GaAs Amplifier Micro-X Marking k

Abstract: gaas fet micro-X Package marking GaAs Amplifier Micro-X BFY193 BFY40 CFY66 BFY420 BFY193 Microx Microwave Semiconductors transistor "micro-x" "marking" 3
Contextual Info: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components

AMD Bipolar PROM programming

Abstract: Kontron MPP80S AM27S20 Bipolar PROM programming kontron mpp Am27S180 tv schematic diagram company SHARP MPP80S DARLINGTON TRANSISTOR ARRAY generic prom programming
Contextual Info: Bipolar Generic PROM Series a Advanced Micro Devices R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B I

GaAs Amplifier Micro-X Marking k

Abstract: LNA ku-band Silicon Bipolar Transistor MICRO-X CLY30 CLY27 microwave fet IC gaas fet micro-X Package gaas fet micro-X Package marking SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X "Marking k"
Contextual Info: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components

Contextual Info: Microelectronics Reliability 46 2006 713–730 www.elsevier.com/locate/microrel Introductory Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh * GeneSiC Semiconductor Inc., 42652 Jolly Lane, South Riding, VA 20152, United States

Contextual Info: artville Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices Ranbir Singh and Michael Pecht 1932-4529/08/$25.00©2008 IEEE E volutionary improvements in silicon Si power devices through better device designs, processing techniques, and material quality have

AD571

Abstract: AD571-000C
Contextual Info: 10-Bit, A/D Converter AD571 1.0 2.0 3.0 3.2 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as modified herein.

Contextual Info: Tuesday, May 6, 2008 12:17 PM / 10-Bit, A/D Converter AD571 1.0 2.0 3.0 3.2 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as

AD571

Abstract: ad5710 AD571-000C
Contextual Info: Friday, Mar 14, 2008 3:52 PM / 10-Bit, A/D Converter AD571 1.0 2.0 3.0 3.2 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as

MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
Contextual Info: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices

ic 3524 internal block diagram

Abstract: ic 3524 pin diagram ic 4518 applications ic 3525 internal block diagram magnetic transducers "Hall Effect Sensors" A3056EU UGN3235K A3056LU A3058EU
Contextual Info: HALL-EFFECT SENSORS 535 THRU 640 HALL-EFFECT SUBASSEMBLIES The ATS535 through ATS640 series of devices are optimized Hall-effect IC/magnet combinations that provide complex sensing functions in small packages. See page 11 for a complete listing of devices.

e-phemt

Abstract: HBT agilent series DC bias of gaas FET GaAs mesfet list
Contextual Info: Characteristics of E-pHEMT vs HBTs for PA Applications White Paper Agilent Technologies Semiconductor Products Group Introduction Many different semiconductor technologies are currently being used for power amplifiers PAs that include a mix of Silicon and GaAs devices –