RENESAS SHIPPING INFORMATION Search Results

RENESAS AE4

Abstract: Smart Cards AE44C HWD65244CT smart card emulator HD652 RENESAS AE-4
Contextual Info: Renesas Technology Releases AE44C High-Security 16-Bit Smart Card Microcontroller for Financial Field  Incorporating 18-Kbyte EEPROM, 128-Kbyte mask ROM, and encryption functions, ideal for smart cards such as credit cards and bank cards  Tokyo, December 5, 2005  Renesas Technology Corp. today announced the AE44C smart card

usim

Abstract: HD65256 AE56C HD65257 HWD65257C2T AES chips hd65 AE57C EEPROM Capacity HD65258
Contextual Info: Renesas Technology Releases Three 32-Bit Smart Card Microcontroller Models for Mobile Phone Field  High-performance CPU, large-capacity memory, and various security functions enabling implementation of advanced high-performance, high functionality and highsecurity USIM cards for mobile phones, etc. 

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

sh-mobile

Abstract: Mobile handsets LCD for mobile phone wcdma soc
Contextual Info: Renesas Technology Starts Sample Shipments of SH-Mobile G2 Single-Chip LSI Jointly Developed with NTT DoCoMo, Fujitsu, Mitsubishi Electric, and Sharp for Dual-Mode Mobile Handsets Tokyo, October 3, 2006 — Renesas Technology Corp. today announced that it has begun

017BH

Contextual Info: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. R8C/33A Group REJ03B0228-0001 Rev.0.01 Oct 26, 2007 RENESAS MCU 1. Overview 1.1 Features The R8C/33A Group of single-chip MCUs incorporates the R8C/Tiny Series CPU core, employing sophisticated

marking code B2 SMD ic

Abstract: RENESAS marking code making code for transistor RENESAS marking code package smd TRANSISTOR code marking 013 smd code marking for japanese smd TRANSISTOR code marking e1 TRANSISTOR SMD MARKING CODE UA PXSF0006LA-A TRANSISTOR SMD MARKING CODE X D
Contextual Info: HTT1213E Silicon NPN Epitaxial Twin Transistor REJ03G0526-0100 Previous ADE-208-1449(Z Rev.1.00 Feb.07.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent

PRSS0003AE-A

Abstract: RJK1525DPS RJK1525DPS-E
Contextual Info: RJK1525DPS Silicon N Channel MOS FET High Speed Power Switching REJ03G1314-0100 Rev.1.00 Nov 07, 2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AE-A Package name: TO-220CFM D 1. Gate

Contextual Info: 2SC1214 Silicon NPN Epitaxial REJ03G0686-0200 Previous ADE-208-1050 Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings

H7N0308CF

Abstract: PRSS0003AE-A
Contextual Info: H7N0308CF Silicon N Channel MOS FET High Speed Power Switching REJ03G1123-0300 Previous: ADE-208-1570A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

H5N2501LD

Abstract: H5N2501LM H5N2501LS H5N2501LSTL-E PRSS0004AE-A PRSS0004AE-C Package Code 22
Contextual Info: H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

H5N5012P

Abstract: H5N5012P-E
Contextual Info: H5N5012P Silicon N Channel MOS FET High Speed Power Switching REJ03G0378-0200Z Rev.2.00 Jun.17.2004 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline TO-3P D 1. Gate 2. Drain Flange 3. Source

H5N3011P

Abstract: H5N3011P-E H5N3011
Contextual Info: H5N3011P Silicon N Channel MOS FET High Speed Power Switching REJ03G0385-0100Z Rev.1.00 Jul.07.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D 1. Gate 2. Drain Flange 3. Source G S 1 2 3 Absolute Maximum Ratings

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

HAT2087R

Abstract: HAT2087R-EL-E
Contextual Info: HAT2087R Silicon N Channel MOS FET High Speed Power Switching REJ03G1182-0200 Previous: ADE-208-1233 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> )

2sc1213

Abstract: transistor 2SA673 2SA673 2SA673A 2SC1213A 2SC1213CTZ-E 2SC1213DTZ-E PRSS0003DA-A SC-43A 2SC1213ABTZ-E
Contextual Info: 2SC1213, 2SC1213A Silicon NPN Epitaxial REJ03G0684-0200 Previous ADE-208-1048 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)

AE55C1

Abstract: renesas sim HWD65255CIT Smart Cards construction of subscriber identity module DES Encryption cryptographic PRESS RELEASE COMMON CRITERIA PRESS RELEASE COMMON CRITERIA EAL4 smart card microcontroller
Contextual Info: AE55C1 32-Bit Smart Card Microcontroller for Financial and ID Fields Obtains International Standard ISO/IEC 15408 Certification Tokyo, April 5, 2006——Renesas Technology Corp. today announced that the company’s AE55C1 32bit smart card microcontroller, with advanced cryptographic library functions, obtained EAL4+

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

dpak code

Abstract: H5N2510DL H5N2510DS H5N2510DSTL-E PRSS0004ZD-B PRSS0004ZD-C
Contextual Info: H5N2510DL, H5N2510DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1110-0200 Previous: ADE-208-1379 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B

H5N2505DL

Abstract: H5N2505DL-E H5N2505DS H5N2505DSTL-E PRSS0004ZD-B PRSS0004ZD-C
Contextual Info: H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1107-0200 Previous: ADE-208-1376 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

PRSS0003ZE-A

Contextual Info: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A