RESISTOR 1.5 K Search Results

RT5N141C

Abstract: RT5N141
Contextual Info: RT5N141C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5N141C is a one chip transistor with built-in bias 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=10kΩ, R2=10kΩ）

RT5N234C

Contextual Info: RT5N234C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5N234C is a one chip transistor with built-in bias 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=2.2kΩ, R2=10kΩ）

E50M

Abstract: RT5N431C RT5N431
Contextual Info: RT5N431C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5N431C is a one chip transistor with built-in bias 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=4.7kΩ, R2=4.7kΩ）

RT5N431C

Abstract: RT5N431
Contextual Info: RT5N431C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING RT5N431C is a one chip transistor with built-in bias Unit: mm 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=4.7kΩ, R2=4.7kΩ）

RT5P141C

Contextual Info: RT5P141C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5P141C is a one chip transistor with built-in bias 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=10kΩ, R2=10kΩ）

RT5N141C

Contextual Info: RT5N141C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING RT5N141C is a one chip transistor with built-in bias Unit: mm 2.5 resistor. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9 1.90 Built-in bias resistor （R1=10kΩ, R2=10kΩ）

Contextual Info: www.eLED.com T-1 3mm RESISTOR LED LAMPS Package Dimensions E934GD5V GREEN E934ID5V HIGH EFFICIENCY RED E934SGD5V SUPER BRIGHT GREEN E934SRD5V SUPER BRIGHT RED E934YD5V YELLOW Features 1.5 VOLT SERIES IN T-1 PACKAGES. 2.INTEGRAL CURRENT LIMITING RESISTOR.

l38 transistor

Abstract: ss1250 marking L36 005-4424
Contextual Info: DATA SHEET SILICON TRANSISTOR ELECTRON OUNCE / £ ^ _ _ FAI L3Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in TYPE B 2.8 +0.2 O—M A r R! = 4.7 k ft R1 1.5 • Complementary to FN 1L3Z

RT5P430C

Abstract: rt5p430
Contextual Info: PRELIMINARY RT5P430C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit: mm RT5P430C is a one chip transistor with built-in bias 2.5 resistor, NPN type is RT5N430C. 0.5 1.5 0.5 2.9 1.90 0.95 0.95

RT5P230C

Abstract: RT5N230C
Contextual Info: PRELIMINARY RT5P230C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit: mm RT5P230C is a one chip transistor with built-in bias 2.5 resistor, NPN type is RT5N230C. 0.5 1.5 0.5 ① ② 0.4 0.95 2.9

1NBA

Abstract: resistor PT-200
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FA1A4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E o—V W 2.8 + 0.2 1.5 R i = 1 0 k i2 Rl 0.65i8;is •

H100I

Abstract: marking IAY
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in TYPE o—W V 2.8 ± 0.2 Rl = 22 k£2 R1 0.65: g;|5 1.5 • Complementary to FA1 F4Z

24v 5a smps

Abstract: 24V 10A SMPS SMPS 24V MAX1999 ultrasonic pulse generator kit SMPS CIRCUIT DIAGRAM 5V 20A 12v 5a smps 24v smps computer smps circuit MAX1777
Contextual Info: 19-2187; Rev 0; 4/02 High-Efficiency, Quad Output, Main PowerSupply Controllers for Notebook Computers Applications Features ♦ No Current-Sense Resistor Needed MAX1999 ♦ Accurate Current Sense with Current-Sense Resistor (MAX1777/MAX1977) ♦ 1.5% Output Voltage Accuracy

L4Z marking

Abstract: marking M61 marking M63
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1L4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E B O—v w 2.8 ± 0.2 0.65ig;i5 1.5 • 3 R i = 4 7 k i2

Ceramic Resistor 5W axial wirewound

Abstract: Resistor 5W axial wirewound wirewound resistor 5W resistor 120 ohms j 15k 2watt resistor Ceramic Resistor 1W axial wirewound 10R0 1R00 R250 1 watt axial resistor
Contextual Info: Commercial Grade Power Axial Wirewound Resistor CCW Series • • • • • Power ratings from 1/2W to 9W Non-inductive windings available Ceramic core wirewound resistor Resistance range from 0.1Ω to 1.5Ω Welded construction, conformal coating Electrical Data

Contextual Info: DATA SHEET SEC SILICON TRANSISTOR ELECTRON DEVICE FN 1A 4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in T Y P E 2.8 + 0.2 R t = 1 0 kn o— A /V V Ri 0.65 I g ls 1.5

L5 marking

Contextual Info: DATA SHEET SILICON TRANSISTOR HfCTBOM DEVICE FN1L3Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters Resistor Built-in T Y P E 2.8 ± 0.2 O—W V 3 R i = 4 . 7 k£2 R1 0.65i8:l5 1.5 •

Contextual Info: Mounting Clip FEATURES • Prevents severe vibration or mechanical shock to resistor • Increases resistor wattage up to 100% when mounted on metal surface 1.5 sq. in. by 0.040 in. thick min. per watt dissipated • Holes in clip base permit fastening to chassis

RT1N140C

Abstract: RT1N140M RT1N140S RT1N140T RT1N140U RT1N140X RT1P140X
Contextual Info: ＲＴ１Ｎ１４０Ｘ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE RT1N140U RT1N140C 2.5 1.6 0.5 0.95 0.3 0.5 ② 1.6 1.0 ・Built-in bias resistor R1=10kΩ 0.5 FEATURE ① 1.5

10R000

Abstract: BL34
Contextual Info: PRECISION BULK METAL FOIL TECHNOLOGY TXCS/TXCSP/TXCA/TXCAP Current Sensing Resistor/Power Current Sensing Resistor FEATURES •Load Life Stability: ±0.05% 1.5 Watts at +25°C Free Air ±0.05% 5.0 Watts at +25°C on Heat Sink •Operating temperature: -55°C to 150°C

L66 marking

Abstract: IR 2137 IC TC-2137 marking L64
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FAI F4Z M ED IU M SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters Resistor Built-in TYPE 2 .8 ± 0.2 B 1.5 O—W V Ri = 22 k£2 Ri 3 - OE

830CE

Abstract: UN1121 UN1122 UN1123 UN1124 UN112X UN112Y
Contextual Info: Transistors with built-in Resistor UN1121/1122/1123/1124/112X/112Y Silicon PNP epitaxial planer transistor For digital circuits Unit: mm • Features 2.5±0.1 1.5 1.0 1.0 0.4 1.5 R0.9 ● ● ● ● ● UN1121 UN1122 UN1123 UN1124 UN112X UN112Y R1 2.2kΩ

Contextual Info: Mounting Clip • Prevent severe vibration or mechanical shock to resistor • Increase resistor wattage up to 100% when mounted on metal surface 1.5 sq. in. by 0.040 in. thick min. per watt dissipated • Holes in clip base permit fastening to chassis surface with machine

L4Z marking

Contextual Info: DATA SHEET SILICON TRANSISTOR ' FA1L4Z ‘Æ à i f ' MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD FEATURES PACKAGE D IM E N SIO N S • in millimeters Resistor Built-in TYPE 2.8+0.2 o—V A — 1.5 Rl • Ri = 4 7 k fì Complementary to F N 1L4Z