RESISTOR 4.7 K Search Results

PUMB15

Abstract: PUMH15 PUMD15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMD15 NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification 2004 Feb 04 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

PUMB15

Abstract: PUMH15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PUMH15 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification 2003 Oct 09 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

PDTC143EK

Abstract: PDTC143E TC143E PDTC143EE PDTC143EEF PDTC143EM PDTC143ES PDTC143ET PDTC143EU SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product data sheet Supersedes data of 2004 Mar 18 2004 Aug 05 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

PUMB15

Abstract: PUMH15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMB15 PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ‚ R2 = 4.7 kΩ Product specification 2003 Nov 07 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ‚ R2 = 4.7 kΩ

ta143e

Abstract: TA143 PDTC143EK PDTA143EU SC-89 PDTA143E PDTA143EE PDTA143EEF PDTA143EK PDTA143EM
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143E series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product data sheet Supersedes data of 2003 Sep 08 2004 Aug 04 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

463A

Abstract: NSBC143EDXV6
Contextual Info: MUN5232DW1, NSBC143EDXV6, NSBC143EDP6 Dual NPN Bias Resistor Transistors R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

MUN5332DW1

Contextual Info: MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

Contextual Info: RT2P02M COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2P02M is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=4.7 KΩ , R2=4.7 KΩ

PDTA143TEF

Abstract: SC18 SC-89 marking code 10 free transistor and ic equivalent data PDTA143
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA143TEF PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Product specification 2002 Jan 15 Philips Semiconductors Product specification PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open PDTA143TEF

SC18

Abstract: PDTC143TEF SC-89 M3D425 0912-7 "MARKING CODE 11"
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC143TEF NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Product specification 2002 Jan 15 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open PDTC143TEF

ta143e

Abstract: PDTA143EU PDTA143E PDTA143EE PDTA143EEF PDTA143EK PDTA143EM PDTA143ES PDTA143ET SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143E series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 2003 Apr 11 2003 Sep 08 Philips Semiconductors Product specification PNP resistor-equipped transistors;

PNP TRANSISTOR SOT666

Abstract: PEMB3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB3 PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open

PEMH7

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH7 NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Preliminary specification 2001 Oct 22 Philips Semiconductors Preliminary specification NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open FEATURES

transistor marking B5

Abstract: 6 PIN DOUBLE TRANSISTOR PUMB3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PUMB3 PNP resistor-equipped double transistor; R1 = 4.7 kΩ Product specification 2001 Sep 19 Philips Semiconductors Product specification PNP resistor-equipped double transistor; R1 = 4.7 kΩ FEATURES

ta143e

Abstract: PDTA143EU PDTC143EK ta143e w PDTA143E PDTA143EE PDTA143EK PDTA143EM PDTA143ES PDTA143ET
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143E series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 1999 Apr 13 2003 Apr 11 Philips Semiconductors Product specification PNP resistor-equipped transistors;

tc143e

Abstract: PDTC143EK PDTC143E marking code R2 sot23 PDTC143EE PDTC143EEF PDTC143EM PDTC143ES PDTC143ET PDTC143EU
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 2004 Mar 18 2004 Aug 05 Philips Semiconductors Product specification NPN resistor-equipped transistors;

Contextual Info: MUN5132DW1, NSBA143EDXV6, NSBA143EDP6 Dual PNP Bias Resistor Transistors R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single

tc143e

Abstract: PDTC143EK PDTC143E
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 2003 Sep 10 2004 Jan 12 Philips Semiconductors Product specification NPN resistor-equipped transistors;

tc143e

Abstract: PDTC143EK PDTC143EEF PNP tc143e PDTA143 PDTC143E
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 2004 Jan 12 2004 Mar 18 Philips Semiconductors Product specification NPN resistor-equipped transistors;

tc143e

Abstract: PDTC143ET PDTC143EK PDTC143E PDTC143EU SC-101 SC-75 PDTC143EE PDTC143EM PDTC143ES
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 1999 Apr 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;

PDTC143EK

Abstract: PDTC143E
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 1999 Apr 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;

Contextual Info: FJV3101R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 4.7 kΩ • Complement to FJV4101R Application • Switching Application (Integrated Bias Resistor)

Contextual Info: FJV4101R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 4.7 kΩ • Complement to FJV3101R Application • Switching Application (Integrated Bias Resistor)

Contextual Info: FJV4101R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 4.7 kΩ • Complement to FJV3101R Application • Switching Application (Integrated Bias Resistor)