RESISTORES Search Results

resistores

Abstract: 50099 SI-50099
Contextual Info: 1 CT: 1 C T NOTES: 1.0 PINS WITHOUT ELECTRICAL CONNECTION ARE OMITTED. 2.0 ALL RESISTORES ARE ±5% TOLERANCE. 10OOpF, 2 KV ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 8 - P 6 - P 7 : (P ÍE4 - P 5 - P 3 1CT : 1CT ±3% 1CT : 1CT ±3% 2.0 INDUCTANCE : 350uH MIN. @ 0.1V, 100KHz, 8mA DC Bias

resistores

Contextual Info: 1CT:1CT @ "jauju-/Ä fY Y Y ^ =F 1CT:1CT ~jauuuLT- @ IJ1 IJ2 NOTES: IJ3 IJ4 IJ5 1.0 PINS WITHOUT ELECTRICAL CONNECTION ARE OMITTED. 2 .0 ALL RESISTORES ARE ± 5% TOLERANCE. IJ6 IJ7 75 75 IJ8 75 10OOpF, 2KV ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO : P 8 - P 6 - P 7

37KW motor wiring diagram

Abstract: 37KW E80276 PM200CLA120 ic 3254 internal block diagram
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM200CLA120 PM200CLA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM200CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process.

E80276

Abstract: PM50B5LB060
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LB060 FLAT-BASE TYPE INSULATED PACKAGE PM50B5LB060 FEATURE a Adopting new 5th generation IGBT CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C

Contextual Info: Precision Single, Dual and Quad Low Noise Operational Amplifiers ISL28107, ISL28207, ISL28407 Features The ISL28107, ISL28207 and ISL28407 are single, dual and quad amplifiers featuring low noise, low input bias current, and low offset and temperature drift. This makes them the

30KW Inverter Diagram

Abstract: PM150CSE120
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM150CSE120 PM150CSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM150CSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

PM75CSE120

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSE120 PM75CSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

PM75CSE060

Abstract: design drive circuit of IGBT
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSE060 PM75CSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSE060 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

PM25CLB120

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLB120 FLAT-BASE TYPE INSULATED PACKAGE PM25CLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

PCF793X

Abstract: H400X PCF793 HITAG 2 protocol 9352 339 00122 HITAG micro PROTOCOL transponders philips hitag free on HT 648 L hitag Security Transponder HITAG
Contextual Info: HT CM400 HITAG Core Module Hardware Product Specification Revision 2.0 November 1996 Core Module HT CM400 Rev.: 2.0 November 1996 Table of Contents 1. Introduction 5 2. System Overview 7 2.1. Transponders 2.2. Host 2.3. I/O - Functions 2.4. Connecting the Antenna

PM75CLB060

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB060 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

PM50CSE120

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM50CSE120 PM50CSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM50CSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

PM150CLA060

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

PM200CLA060

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM200CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

PM50CSE060

Abstract: IC 7405
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM50CSE060 PM50CSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM50CSE060 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

30KW Inverter Diagram

Abstract: PM300CLA060 IGBT 10 A Optocoupler PC 801
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

PM50RSE060

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM50RSE060 PM50RSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM50RSE060 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

PM75CBS060

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CBS060 PM75CBS060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CBS060 FEATURE a Adopting 4th generation IGBT chip, which performance is improved by 1µm fine rule process.

PM100CLA060

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM100CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

1 phase igbt 1200V 40A module

Abstract: E80276 PM75RLB120
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75RLB120 FLAT-BASE TYPE INSULATED PACKAGE FEATURE PM75RLB120 a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

PM150CSD120

Abstract: E80276
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM150CSD120 PM150CSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM150CSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

E80276

Abstract: PM50CLA060
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM50CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

E80276

Abstract: PM100RLA060 INVERTER FOR motor
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

E80276

Abstract: PM50RLA120
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50RLA120 FLAT-BASE TYPE INSULATED PACKAGE FEATURE PM50RLA120 a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of