RF 12 PIN MARKING Search Results

UF 5807

Abstract: 06035J0R8ABTTR AH315 AH315-PCB LL1608-FSL18NJ QAM-64 "738 819" 2W High Amplifier qfn
Contextual Info: AH315 3.3 – 3.8 GHz WiMAX 2W Driver Amplifier Applications • 802.16 WiMAX infrastructure 24-pin 5x5mm leadless QFN SMT package General Description GND / NC Vcc1 GND / NC Vbias2 Iref2 20 19 18 17 16 RF Out RF In 4 12 RF Out RF In 5 11 RF Out 10 13 GND / NC

transistor NEC B 617

Abstract: nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357

Contextual Info: FP31QF The Communications Edge TM Advanced Product Information 23 22 21 GND 20 GND GATE / 3 RF IN 19 DRAIN / RF OUT 16 GND GND 7 15 GND 8 9 10 11 12 13 14 GND 17 GND GND 6 GND 18 GND GND 5 GND GND 4 Function Gate / RF Input Drain / RF Output Pin No. 3 19 All other pins &

2SC5180

Abstract: 2SC5180-T1 t84 marking PU10517EJ01V0DS
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • Low current consumption and high gain 2 S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz

2SC5015

Abstract: 2SC5015-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 18 FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation

2SC5509

Abstract: 2SC5509-T2 2V330
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz

NEC 1357

Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz

2SC5786

Abstract: 2SC5786-T1 marking UE marking 654 3pin nec 1299 662
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz

Germanium Transistor

Abstract: Germanium power ON5088,115
Contextual Info: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

aa191

Abstract: 897 1747 SWITCHPLEXER LMSP54CA-141 sp-AA191 GSM1800 GSM900 LMSP43AA-191 LMSP54AA-097 LMSP54CA-142
Contextual Info: Microwave Modules 04.10.20 RF Diode Switches SP AA191 0.4±0.1 0.7±0.2 0.4±0.1 1 (2) (3) (4) (5) (12) (6) 1.2±0.1 1.8 max. 0.80±0.15 3.2±0.2 0.45±0.2 0.4±0.1 Pin 1 Marking 4.7±0.2 0.4±0.1 SWITCHPLEXERr 0.8±0.1(11)(10)(9) (8) (7) 0.6±0.2 (1) : GSM1800 Rx

Contextual Info: VG111 The Communications Edge TM • MTTF > 100 years GND GND GND GND VA CTRL 2 1 28 GND 27 GND Amp GND 10 26 GND RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator 23 GND GND 14 22 GND 15 16 17 18 19 20 21 N/C • 6x6 mm 28-pin QFN package 3 GND 9 GND 13

variable inductor 17 18

Contextual Info: VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier • MTTF > 100 years GND GND GND VA CTRL GND GND 2 1 28 GND 27 GND Amp GND 10 26 GND RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator 23 GND GND 14 22 GND 15 16 17 18 19 20 21 GND • 6x6 mm 28-pin QFN package

SP AA097

Abstract: AA097
Contextual Info: Microwave Modules 04.07.01 RF Diode Switches 12 0.1±0.1 (6) (11)(10) (9) (8) (7) 0.4±0.2 2.2±0.1 A 0.4±0.1 (1) (2) (3) (4) (5) 0.1±0.1 4.0±0.2 SP AA097 0.4±0.1 0.1±0.1 1.8 max. 5.4±0.2 0.4±0.2 SWITCHPLEXERr 0.6±0.1 1.0±0.1 0.35±0.20 A : 1 Pin Marking

ovenaire 10 mhz oscillator

Abstract: ovenaire OSC ovenaire ovenaire 10 mhz ovenaire oscillator ovenaire osc 64 Oak Frequency Control APEC 25to ovenaire oak frequency control OSC
Contextual Info: OAK/nC COY ELEK-. OVENAIRE 5bE D b?Efi51D DGDGSbö ?Tfl IOKM DIMENSIONS IN MILLIMETERS PIN 1. 2. 3. CONN. RF OUTPUT +12 VDC 0 VDC ovenoire NAME f M ILLIM ETER S 1 0 . 5 0 OTHERWISE < ANSLES UNLESS £ a p e c iriE P O cn 2250 OUTLINE DRAWING CATALOG TCXO to leran ces

ovenaire OSC

Abstract: ovenaire 10 mhz ovenaire ovenaire 10 mhz oscillator ovenaire oak frequency control OSC TCXO 1050 ovenaire oscillator
Contextual Info: OAK/nC COY ELEK-. OVENAIRE SbE D • b?Efi51D DGDOSbñ ?Tfi « O K M DIMENSIONS IN MILLIMETERS PIN 1. 2. 3. MM .64 5.00 5.60 6.60 7.10 8.90 11.70 16.00 20.30 30.70 46.00 CONN. RF OUTPUT +12 VDC 0 VDC CO w H PS w Ui o v e f M u r e NAME £ OrH ucn O NEW DECAL ADDED.

ovenaire

Abstract: Ovenaire-Audio-Carpenter TCXO 1050
Contextual Info: OVEN AI RE-AU DIO- T? DE JbflBSSS^ DOODfln 1 T~ - S O 'C I DIMENSIONS IN MILLIMETERS PIN 1. 2. 3. CONN. RF OUTPUT +12 VDC 0 VDC co w - w Ci NAME V O W W iH 1 r~» OUTLINE DRAWING CATALOG TCXO SHT TOLERANCES ±.020 :i l Mate HT NEW DECAL ADDED. . D p y r i g h t e d M a n u f a

93 ab chip

Contextual Info: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93

RF AMPLIFIER marking S1

Contextual Info: Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking Package MRFIC0970 0970 QFN-20 The MRFIC0970 is a single supply, RF power amplifier designed for the 2.0 W GSM900

smd MARKING CODE G72

Contextual Info: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package

Contextual Info: Miscellaneous ÿ r r- ;ÿ - Snap-on Foot Snap-on Foot Omnimate Range j Omnimate Range Snap-on Foot I Crimpmate Range j limate for RSV 1.6 plug-in connector elements marking with dekafix possible Snap-on foot for TS 35 Poles type RSV 1.6 RF 4 Part No. 4 1582910000

905 motorola

Abstract: QFN-20 GSM900 MRFIC0970
Contextual Info: Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking Package MRFIC0970 0970 QFN-20 The MRFIC0970 is a single supply, RF power amplifier designed for the 2.0 W GSM900

Contextual Info: TQM879026 0.7−4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure  CDMA, WCDMA, LTE  Repeaters 4x4 mm 24 Pin leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking

Contextual Info: TQM879026 0.7−4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure  CDMA, WCDMA, LTE  Repeaters 4x4 mm 24 Pin leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking

Contextual Info: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking