RF 450 Search Results

ZFSWA2-63DR

Abstract: "RF Switch" DNA 1005
Contextual Info: RF Switch SPDT ZFSWA2-63DR+ Typical Performance Data INSERTION LOSS RF MHz VDD=+3V (dB) ISOLATION RF (MHz) VDD=+5V (dB) RF COM-RF1 RF COM-RF2 RF COM-RF1 RF COM-RF2 VDD=+3V (dB) VDD=+5V (dB) RF COM-RF1 RF COM-RF2 RF COM-RF1 RF COM-RF2 100.00 0.74 0.84 0.76

Contextual Info: REMEC RF 1.5-9.0 GHz LO 1.0-9.0 GHz IF 10-4500 MHz Triple Balanced Mixer Multi-Octave Band Electrical Specifications : 1 Conditions Parameter SSB Conversion loss:(2) (3) Isolation LO to RF: LO to IF: RF to IF: IF to RF: Input 1-dB Compression Point: RF(GHz)

Contextual Info: REMEC RF 1.5-9.0 GHz LO 1.0-9.0 GHz IF 10-4500 MHz Triple Balanced Mixer Multi-Octave Band Electrical Specifications : 1 Conditions Parameter SSB Conversion loss:(2) (3) Isolation LO to RF: LO to IF: RF to IF: IF to RF: Input 1-dB Compression Point: RF(GHz)

Contextual Info: REMEC RF 1.5-9.0 GHz LO 1.0-9.0 GHz IF 10-4500 MHz Triple Balanced Mixer Multi-Octave Band Electrical Specifications : 1 Conditions Parameter SSB Conversion loss:(2) (3) Isolation LO to RF: LO to IF: RF to IF: IF to RF: Input 1-dB Compression Point: RF(GHz)

CSWA2-63DR

Contextual Info: RF Switch SPDT CSWA2-63DR+ Typical Performance Curves INSERTION LOSS ISOLATION RF COM-RF1 & RF COM-RF2 RF COM-RF1 @ VDD=+3V RF COM-RF2 @ VDD=+3V RF COM-RF1 @ VDD=+5V RF COM-RF2 @ VDD=+5V Insertion Loss dB 1.70 1.55 RF COM-RF1 @ VDD=+3V RF COM-RF2 @ VDD=+3V

gsm booster circuit

Abstract: MRF5P21180H gsm 900 dual band signal booster gsm signal Booster MRF8S21170H gsm signal booster circuit circuit booster gsm MRF6VP11KH MW6S004N MC44BS373
Contextual Info: RF Product Focus Products Quarter 2, 2009 SG1009Q22009 Rev 0 RF Industrial, Scientific and Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power Transistors RF Amplifier ICs RF General Purpose Amplifiers RF Modulators, Booster - Splitter, Stereo Encoders, Silicon Tuners

CATV2225

Contextual Info: FEATURES MODEL NO. CATV2225 450 - 950 MHz Linear 38 dB Range VCA VCA .60 DIA .55 DIA PART IDENTIFICATION .025 MAX .208 MAX .12 MIN .017±.002 DIA 5 PLACES RF 6 OUTPUT 4 RF INPUT 5 RF/CASE GND .400 GND .200 RF INPUT RF OUTPUT 5 4 .400 .200 6 .031 3 2 1 .031

gsm booster circuit

Abstract: mrf373al u880 RF MODULATORS mrf9030n MRF6VP11KH MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060
Contextual Info: RF Product Focus Products Quarter 4, 2007 SG1009Q42007 Rev 0 RF Industrial, Scientific and Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers

YSW-2-50DR

Contextual Info: RF Reflective Switch SPDT YSW-2-50DR+ Typical Performance Curves Isolation Insertion Loss 100 1.8 RF IN-RF1 90 RF IN-RF1 1.6 RF IN-RF2 80 RF IN-RF2 Isolation dB 1.4 1.2 1.0 0.8 70 60 50 40 0.6 30 0.4 20 0.2 10 0.0 500 1000 1500 2000 2500 3000 3500 4000 4500

YSW-2-50DR

Contextual Info: RF Reflective Switch SPDT YSW-2-50DR Typical Performance Curves Isolation Insertion Loss 100 1.8 RF IN-RF1 90 RF IN-RF1 1.6 RF IN-RF2 80 RF IN-RF2 Isolation dB 1.4 1.2 1.0 0.8 70 60 50 40 0.6 30 0.4 20 0.2 10 0.0 500 1000 1500 2000 2500 3000 3500 4000 4500

vswa2-63dr

Contextual Info: RF Switch SPDT VSWA2-63DR+ Typical Performance Curves Isolation Insertion Loss 120 2.00 RF COM-RF1 @ VDD=+3V RF COM-RF2 @ VDD=+3V RF COM-RF1 @ VDD=+5V RF COM-RF2 @ VDD=+5V 1.70 1.55 110 RF COM-RF1 @ VDD=+3V RF COM-RF2 @ VDD=+3V RF COM-RF1 @ VDD=+5V RF COM-RF2 @ VDD=+5V

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

ysw-2-50dr

Abstract: spdt switch SPDT switches switch SPDT
Contextual Info: RF Reflective Switch SPDT YSW-2-50DR+ Typical Performance Data INSERTION LOSS ISOLATION dB (dB) RF (MHz) VSWR (:1) RF IN-RF1 RF IN-RF2 RF IN-RF1 RF IN-RF2 RF IN (ON1) RF IN (ON2) RF1 (ON) RF2 (ON) 0.5 0.52 0.51 83.71 83.01 1.13 1.13 1.13 1.13 1.0 0.54 0.53

YSWA-2-50DR

Abstract: yswa
Contextual Info: RF Absorptive Switch SPDT YSWA-2-50DR Typical Performance Data INSERTION LOSS ISOLATION dB (dB) RF (MHz) VSWR (:1) RF IN-RF1 RF IN-RF2 RF IN-RF1 RF IN-RF2 RF IN (ON1) RF IN (ON2) RF1 (ON) RF2 (ON) RF1 (OFF) RF2 (OFF) 1.0 0.55 0.55 112.06 94.13 1.12 1.13

CATV2226

Contextual Info: F E AT U R E S MODEL NO. CATV2226 450 - 950 MHz Linear 57 dB Range VCA VCA .60 DIA .55 DIA PART IDENTIFICATION .025 MAX .208 MAX .12 MIN .017±.002 DIA 5 PLACES RF 6 OUTPUT 4 RF INPUT 5 RF/CASE GND .400 GND .200 RF INPUT RF OUTPUT 5 4 .400 .200 6 .031 3 2 1

Contextual Info: A d v a n c e d R e l e a s e FEATURES MODEL NO. CATV2225 450 - 950 MHz Linear 38 dB Range VCA VCA .60 DIA .55 DIA PART IDENTIFICATION .025 MAX .208 MAX RF 6 OUTPUT 4 RF INPUT 5 RF/CASE GND .12 MIN .017±.002 DIA 5 PLACES .400 GND .200 RF INPUT RF OUTPUT 5

2sk170bl spice

Abstract: 2SK170BL BF256B PHILIPS SEMICONDUCTOR UHF preamplifier for BF998 small signal transistor philips manual philips BFG235 motorola power fet rf databook BB140-01 small signal transistor MOTOROLA DATABOOK Philips X7R capacitors
Contextual Info: RF Manual product & design manual for RF small signal discretes Page: 1 RF Manual product & design manual for RF small signal discretes Volume 0 March 2002 RF Manual product & design manual for RF small signal discretes Content 1. 2. 3. 4. Introduction RF Basics

YSWA-2-50DR

Abstract: yswa spdt switch
Contextual Info: RF Absorptive Switch SPDT YSWA-2-50DR+ Typical Performance Data INSERTION LOSS ISOLATION dB (dB) RF (MHz) VSWR (:1) RF IN-RF1 RF IN-RF2 RF IN-RF1 RF IN-RF2 RF IN (ON1) RF IN (ON2) RF1 (ON) RF2 (ON) RF1 (OFF) RF2 (OFF) 1.0 0.55 0.55 112.06 94.13 1.12 1.13

Contextual Info: A d v a n c e d R e l e a s e FEATURES MODEL NO. CATV2226 450 - 950 MHz Linear 57 dB Range VCA VCA .60 DIA .55 DIA PART IDENTIFICATION .025 MAX .208 MAX RF 6 OUTPUT .12 MIN 4 RF INPUT 5 RF/CASE GND .017±.002 DIA 5 PLACES .400 GND .200 RF INPUT RF OUTPUT 5

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

ASW-2-50DR

Contextual Info: RF Reflective Switch SPDT ASW-2-50DR+ Typical Performance Data INSERTION LOSS ISOLATION dB (dB) RF (MHz) VSWR (:1) RF IN-RF1 RF IN-RF2 RF IN-RF1 RF IN-RF2 RF IN (ON1) RF IN (ON2) RF1 (ON) RF2 (ON) 0.5 1.0 2.0 4.0 6.0 8.0 10.0 20.0 40.0 60.0 80.0 100.0 200.0

LMV227

Abstract: LMV227SD LMV227SDX Logarithmic Amplifier detector
Contextual Info: LMV227 Production RF Tested, RF Power Detector for CDMA and WCDMA General Description Features The LMV227 is a 30 dB RF power detector intended for use in CDMA and WCDMA applications. The device has an RF frequency range from 450 MHz to 2 GHz. It provides an

SAFCH

Abstract: SFE10 TA31273FN K3900
Contextual Info: TA31273FN TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA31273FN AM RF/IF Detector IC The TA31273FN is an RF/IF detector IC for AM radio. The IC incorporates an RF amp, 2-level comparator, and local x8 circuit. Features • RF frequency: 240 to 450 MHz

LMV227

Abstract: LMV227SD LMV227SDX
Contextual Info: LMV227 Production RF Tested, RF Power Detector for CDMA and WCDMA General Description Features The LMV227 is a 30 dB RF power detector intended for use in CDMA and WCDMA applications. The device has an RF frequency range from 450 MHz to 2 GHz. It provides an