RF1K4921196 Search Results

388E-3

Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K49211 RF1K4921196 TB334
Contextual Info: RF1K49211 Data Sheet 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET August 1999 File Number 4303.1 Features • 7A, 12V [ /Title The RF1K49211 Single N-Channel power MOSFET is • rDS ON = 0.020Ω (RF1K4 manufactured using an advanced MegaFET process. This

2tc2

Abstract: 2TC2-5 AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49211 RF1K4921196 TB334
Contextual Info: RF1K49211 Data Sheet January 2002 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET Features • 7A, 12V The RF1K49211 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

Contextual Info: RF1K49211 HARRIS S E M I C O N D U C T O R 7A, 12V, 0.020ÌÌ, Logic Level, Single N-Channel Power MOSFET June 1997 Features Description • 7A, 12V The RF1K49211 Single N-Channel power MOSFET is man­ ufactured using an advanced MegaFET process. This pro­

Contextual Info: RF1K49211 inteteil D ìi h i S h e e t A u g u s t 1999 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channet LlttleFET Power MOSFET The RF1K49211 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

AN7254

Abstract: AN7260 AN9321 AN9322 MS-012AA RF1K49211 RF1K4921196
Contextual Info: RF1K49211 S E M I C O N D U C T O R 7A, 12V, 0.020Ω, Logic Level, Single N-Channel Power MOSFET June 1997 Features Description • 7A, 12V The RF1K49211 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

kp-98

Abstract: Pspice AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49211 RF1K4921196 TB334
Contextual Info: RF1K49211 Data Sheet August 1999 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET • 7A, 12V • rDS ON = 0.020Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature

Contextual Info: RF1K49211 in t e f s il Da ta S h e e t A u g u s t 1999 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET The RF1K49211 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI