RF35 BOARD 30MIL Search Results
RF35 BOARD 30MIL Result Highlights (4)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MYC0409-NA-EVM | Murata Manufacturing Co Ltd | 72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board |
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| SCR410T-K03-PCB | Murata Manufacturing Co Ltd | 1-Axis Gyro Sensor on Evaluation Board |
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| SCC433T-K03-PCB | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board |
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| LBUA5QJ2AB-828EVB | Murata Manufacturing Co Ltd | QORVO UWB MODULE EVALUATION KIT |
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RF35 BOARD 30MIL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
PIMD3Contextual Info: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power |
Original |
NPT35050A 3A001b 750mA, NDS-003 PIMD3 | |
PIMD3Contextual Info: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power |
Original |
NPT35050A 3A001b 750mA, NDS-003 PIMD3 | |
PIMD3Contextual Info: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power |
Original |
NPT35050A 3A001b 750mA, NPT35050A NDS-003 PIMD3 | |
RF35 board 30mil
Abstract: LT1964-BYP nichicon pw NPT35050A 20k ohm potentiometer Nichicon se Theta-J EAR99 JESD22-A114 JESD22-A115
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Original |
NPT35050A NPT35050A 64-QAM RF35 board 30mil LT1964-BYP nichicon pw 20k ohm potentiometer Nichicon se Theta-J EAR99 JESD22-A114 JESD22-A115 |