RF50 Search Results

VR-48

Abstract: diode 1,5k vr48 D0051
Contextual Info: Super Fast Recovery Diode RF505B6S Dimensions（Unit : mm） Series Land size figure Unit : mm 6.0 (2) Applications General rectification 1.6 1.6 (3) (1) Features 1)Power mold type.（CPD） 2)High switching speed 3)Low Reverse current CPD

RF501B2S

Contextual Info: RF501B2S Diode Fast Recovery Diode RF501B2S ●Application General rectification ●Land size figure Unit : mm ●Dimensions（Unit : mm） 6.0 6.5±0.2 5.1±0.2 0.1 0.5±0.1 1.5±0.3 C0.5 1.6 1.5 0.75 2.5 ① CPD 0.9 （1） ●Construction Silicon epitaxial

BFR99

Abstract: 2C4957 2n4957 die SILICON DICE motorola transistor dice
Contextual Info: MOTORO LA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC 34 DlTJfc.3fc.72S5 003Ô0S4 CD I O D E S / O P T O 34C 38054 D T -3 Ì-J3 SILICON RF TRANSISTOR DICE continued) 2C4957 DIE NO. — PNP LINE SOURCE — RF502.57 c« This die provides performance equal to or better than that of

749P

Contextual Info: Data Sheet Fast Recovery Diode RF501B2S Dimensions（Unit : mm ） Land size figure Unit : mm 6.0 Features 1) Power mold type.(CPD) 2) High reliability 3) Low VF 1.6 CPD 4) Very fast recovery 5) Low switching loss 1.6 3.0 2.0 6.0 Applications

Contextual Info: RF501B2S Diodes Fast recovery diode Silicon epitaxial planer RF501B2S zLand size figure zExternal dimensions (Unit : mm) 6.5±0.2 5.1±0.2 0.1 6.0 2.3±0.2 0.1 0.5±0.1 1.5 ① 1.2 0.75 0.8 （2） 0.65±0.1 （3） 0.55±0.1 0.55

TC180

Contextual Info: RF501B2S Diodes Fast recovery diode Silicon epitaxial planer RF501B2S zLand size figure zExternal dimensions (Unit : mm) 6.5±0.2 5.1±0.2 0.1 6.0 2.3±0.2 0.1 0.5±0.1 1.5 ① 1.2 0.75 0.8 （2） 0.65±0.1 （3） 0.55±0.1 0.55

Contextual Info: Data Sheet Super Fast Recovery Diode RF505B6S Dimensions（Unit : mm） Series Land size figure Unit : mm 6.0 (2) Applications General rectification 1.6 1.6 (3) (1) Features 1)Power mold type. (CPD) 2)High switching speed 3)Low Reverse current

RF501PS2S

Abstract: TSOP8
Contextual Info: RF501PS2S Diodes Fast recovery diode RF501PS2S 5 0.5 1.1 0.15 ① 0～0.1 6±0.1 5±0.1 4.56 (1) (2) (3) (4) 1.27 0.75 ＋0.1 0.22－0.05 0.4 ＋0.1 －0.05 TSOP8 0.9±0.05 5.0±0.1 zConstruction Silicon epitaxial planar 6.6 (6) 4.7 (7) 0.5 (8) zFeatures

Contextual Info: MI DRG. NO. RF500BB15-040C REV. RF500BB15-040 .220 1.250 MAX. HIGH POWER BeO RESISTOR SPECIFICATIONS .875 .167 .625 IFILE: RESOUT POWER MAX WATTS : 500 CW RESISTANCE 50 OHMS (±5%) .060 C A U TIO N (2X) THIS SUBSTRATE USES BERYLLIUM OXIDE USE CARE WHEN HANDLING.

RF505

Contextual Info: Data Sheet Super Fast Recovery Diode RF505TF6S Dimensions Unit : mm Series Standard Fast Recovery Structure Applications General rectification RF505 TF6S Features 1)Low switching loss 2)High current overload capacity ① ② Construction

RF505TF6S

Abstract: RF505
Contextual Info: RF505TF6S Data Sheet Super Fast Recovery Diode RF505TF6S Dimensions Unit : mm Series Standard Fast Recovery Structure Applications General rectification RF505 TF6S Features 1)Low switching loss 2)High current overload capacity ① ② Construction

motorola 2N4427

Abstract: 2N4427 MOTOROLA 2N4427 parameters SILICON DICE motorola MRF207
Contextual Info: MOTOROLA SC O I O D E S / O P T O } 6367255 MOTOROLA SC 34 I>F|b3b72SS 0D3Û0S3 1 DIODES/OPTO 34C 38053 D T~ 3 h 9 3 SILICON RF TRANSISTOR DICE (continued) 2C4427 DIE NO. — NPN LINE SOURCE — RF502.161 This die provides performance equal to or better than that of

Contextual Info: M O T O R O L A SC -CDIODES/OPTO} 6367255 34 MOTOROLA SC DE | b 3 b 7 2 S 5 0G3flGb3 4 ~ J 34c CDIODES/OPTO 38063 ' SILICON R F fRA N SISTO R DICE continued) D 5" 2C5836 DIE NO. — NPN LINE SOURCE — RF502.198 & This die provides performance equal to or better than that of

SILICON DICE motorola

Contextual Info: MOT OR OL A SC {DIODES/OPTO} 6367255 MOTOROLA SC 34 D F|b3t,7ESS DIODES/OPTO 34C OOBf l OTB 3 8 q 93 d SILICON RF TRANSISTOR DICE (continued) MRFC559 DIE NO. — NPN LINE SOURCE — RF502.111 c* Designed for operation of up to 1.0 GHz greater than 0.5 watt Class C

2N3866 MOTOROLA s parameters

Abstract: MPS3866A 2n3866A 2C3866 2N3866 2N3866 MOTOROLA
Contextual Info: MOTOROLA s c -CDIODES/OPTOÏ — 34 de |b3b7255 003ÔD51 î I 6 3 6 7 2 5 5 MOTOROLA SC ' - • 34c D I O D E S / O PTO> 3805 1 D v SILICON RF tRA N SISTO R DICE (continued T ~ 3 /- 2 3 2C3866 DIE NO. — NPN LINE SOURCE — RF502.151 This die provides performance equal to or better than that of

MRFC901

Abstract: SILICON SMALL-SIGNAL DICE
Contextual Info: MOTOROL A SC -CDIODES/OPTO} 6367255 MOTOROLA 34 SC DÊJh3b?aS5 <D I O D E S / O P T O 34C SILICON RF TRANSISTOR DICE continued) Q03ÔQT4 38094 T ' I f ' t*f MRFC901 DIE NO. — NPN LINE SOU RCE — RF502.100 » This die provides performance equal to or better than that of

Contextual Info: Super Fast Recovery Diode Data Sheet RF505BM6S lSerise lDimensions Unit : mm lLand Size Figure (Unit : mm) 6.0 lApplication 1.6 1.6 General rectification 1 3.0 2.0 6.0 Standard Fast Recovery 2.3 2.3 TO-252 lFeatures Cathode 1) Low switching loss 3) High current overload capacity

749P

Abstract: RF501B2S
Contextual Info: Fast Recovery Diode RF501B2S zDimensions（Unit : mm ） zLand size figure Unit : mm 6.0 zFeatures 1)Power mold type.(CPD) 2)High reliability 3)Low Vf 4)Very fast recovery 5)Low switching loss 1.6 CPD 1.6 3.0 2.0 6.0 zApplications General rectification 2.3 2.3

MM8002

Abstract: MM8001
Contextual Info: MO T O R O L A SC -CDIODES/OPTO} 6 3 6 7 2 5 5 M O T O R O L A SC 34 DE~Jb3fei72S5 DIODES/OPTO 34c 0030057 38057 SILICON RF TRANSISTOR DICE (continued) T 3 / '« 2 3 2C5109 DIE NO. — NPN LINE SOURCE — RF502.172 iSl This die provides performance equal to or better than that of

Contextual Info: Data Sheet Super Fast Recovery Diode RF505B6S Series Dimensions Unit : mm Land size figure Unit : mm 6.0 (2) 1.6 1.6 (3) (1) Features 1)Power mold type. (CPD) 2)High switching speed 3)Low Reverse current 3.0 2.0 Applications General rectification

MRF8004

Abstract: citizen mhz motorola opto SILICON DICE motorola
Contextual Info: * MOTOROLA Î SC -CDI0DES/0PT03- 6367255 MOTOROLA SC 34 DE | t , 3 b ? 5 S S D IO D ES/O PTO 3 4C □ G 3 ö G clö 38098 D SILICON RF TRANSISTOR DICE (continued) MRFC8004 DIE NO. — NPN LINE SOURCE — RF502.148 A This die provides performance equal to or better than that of

MRF515

Abstract: motorola MRF515 radiosonde motorola MRF627 MRF905 MRF626
Contextual Info: MOTOROLA SC C DIODES/OPTO} 34 DE |L.3t>75S5 003fi0Tl 1 34t 3 8 t m 3 6367255 MOTOROLA SC DIODES/OPTO ° SILICON RF TRANSISTOR DICE (continued) MRFC515 DIE NO. — NPN LINE SOURCE — RF502.83 This die provides performance equal to or better than that of

MRF912

Abstract: 2N6604
Contextual Info: MOTOROLA \ SC -CDIODES/OPTOJ 6367255 M O T O R OL A * ' - ' *•» SC 34 D ~ | b3b7c!55 U U d ä U V ä D IO D ES/O PTO 34C 38078 - ‘ S IL IC O N R F T R A N S IS T O R D IC E (continued) 2C6604 DIE NO. — NPN LINE SOURCE — RF502.104 This die provides performance equal to or better than that of

2N5160 MOTOROLA

Abstract: Transistor 2N5160 2n5160 mm4018
Contextual Info: 34 MOTOROLA SC -CDIODES/OPTOï i 6367255 MOTOROLA SC DE~|b3t.7aSS □□3Ô0SÔ 0 D I O DES /O PT O 34C SILICON RF TRANSISTOR DICE (continuée*) 3 8 05 8 7~- 3 / " 3 , 3 2C5160 DIE NO. — PNP LINE SOURCE — RF502.310 This die provides performance equal to or better than that of