RF501B2S
Abstract: No abstract text available
Text: RF501B2S Diode Fast Recovery Diode RF501B2S ●Application General rectification ●Land size figure Unit : mm ●Dimensions(Unit : mm) 6.0 6.5±0.2 5.1±0.2 0.1 0.5±0.1 1.5±0.3 C0.5 1.6 1.5 0.75 2.5 ① CPD 0.9 (1) ●Construction Silicon epitaxial
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RF501B2S
SC-63
RF501B2S
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749P
Abstract: No abstract text available
Text: Data Sheet Fast Recovery Diode RF501B2S Dimensions(Unit : mm ) Land size figure Unit : mm 6.0 Features 1) Power mold type.(CPD) 2) High reliability 3) Low VF 1.6 CPD 4) Very fast recovery 5) Low switching loss 1.6 3.0 2.0 6.0 Applications
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RF501B2S
200pF
100pF
R1120A
749P
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Untitled
Abstract: No abstract text available
Text: RF501B2S Diodes Fast recovery diode Silicon epitaxial planer RF501B2S zLand size figure zExternal dimensions (Unit : mm) 6.5±0.2 5.1±0.2 0.1 6.0 2.3±0.2 0.1 0.5±0.1 1.5 ① 1.2 0.75 0.8 (2) 0.65±0.1 (3) 0.55±0.1 0.55
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RF501B2S
SC-63
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TC180
Abstract: No abstract text available
Text: RF501B2S Diodes Fast recovery diode Silicon epitaxial planer RF501B2S zLand size figure zExternal dimensions (Unit : mm) 6.5±0.2 5.1±0.2 0.1 6.0 2.3±0.2 0.1 0.5±0.1 1.5 ① 1.2 0.75 0.8 (2) 0.65±0.1 (3) 0.55±0.1 0.55
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RF501B2S
SC-63
TC180
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749P
Abstract: RF501B2S
Text: Fast Recovery Diode RF501B2S zDimensions(Unit : mm ) zLand size figure Unit : mm 6.0 zFeatures 1)Power mold type.(CPD) 2)High reliability 3)Low Vf 4)Very fast recovery 5)Low switching loss 1.6 CPD 1.6 3.0 2.0 6.0 zApplications General rectification 2.3 2.3
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RF501B2S
R0039A
749P
RF501B2S
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749P
Abstract: No abstract text available
Text: RF501B2S Data Sheet Fast Recovery Diode RF501B2S Dimensions(Unit : mm ) Land size figure Unit : mm 6.0 Features 1) Power mold type.(CPD) 2) High reliability 3) Low VF 1.6 CPD 4) Very fast recovery 5) Low switching loss 1.6 3.0 2.0 6.0 Applications
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RF501B2S
200pF
100pF
R1120A
749P
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Untitled
Abstract: No abstract text available
Text: Data Sheet Fast Recovery Diode RF501B2S Dimensions Unit : mm Land size figure Unit : mm 6.0 Features 1) Power mold type.(CPD) 2) High reliability 3) Low VF 1.6 CPD 4) Very fast recovery 5) Low switching loss 1.6 3.0 2.0 6.0 Applications General rectification
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RF501B2S
200pF
100pF
R1120A
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DRF501B2S
Abstract: N1055 Diode D 54 212E 971e RF501B2S
Text: SPICE PARAMETER RF501B2S by ROHM FAE Div. * RF501B2S D model * Date: 2008/07/30 .MODEL RF501B2S D + IS=54.971E-12 + N=1.0556 + RS=5.1306E-3 + IKF=35.426E-3 + EG=1.0300 + CJO=193.53E-12 + M=.44869 + VJ=.51503 + ISR=933.12E-12 + NR=3.2000 + BV=200 + TT=30.212E-9
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RF501B2S
DRF501B2S
971E-12
1306E-3
426E-3
53E-12
12E-12
212E-9
N1055
Diode D 54
212E
971e
RF501B2S
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Untitled
Abstract: No abstract text available
Text: RF501B2S Diodes Fast recovery diode RF501B2S zApplications General rectification zLand size figure zDimensions Unit : mm 6.0 6.5±0.2 5.1±0.2 0.1 6.0 0.5±0.1 1.5±0.3 C0.5 1.6 9.5±0.6 5.5±0.3 0.1 1.6 1.5 0.75 2.5 ① 3.0 2.0 zFeatures
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RF501B2S
SC-63
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RF501B2S
Abstract: No abstract text available
Text: RF501B2S Diodes Fast recovery diode Silicon epitaxial planer RF501B2S zApplications General rectification zLand size figure zExternal dimensions (Unit : mm) 6.0 6.5±0.2 5.1±0.2 0.1 6.0 0.5±0.1 1.5±0.3 C0.5 1.6 9.5±0.6 5.5±0.3 0.1
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RF501B2S
SC-63
RF501B2S
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RF501B2S
Abstract: No abstract text available
Text: RF501B2S Diodes Fast recovery diode RF501B2S zApplications General rectification zDimensions Unit : mm zLand size figure 㩷㩷㩷㩷 㪍㪅㪇 㪉㪅㪊㫧㪇㪅㪉 䇭䇭䇭㩷㪇㪅㪈 㪍㪅㪌㫧㪇㪅㪉 㪇㪅㪌㫧㪇㪅㪈 㪍㪅㪇 㪈㪅㪌㫧㪇㪅㪊
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RF501B2S
RF501B2S
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RF501B2S
Abstract: No abstract text available
Text: RF501B2S Diodes Fast recovery diode RF501B2S zApplications General rectification zLand size figure zDimensions Unit : mm 6.0 2.3±0.2 0.1 6.5±0.2 0.5±0.1 6.0 1.5±0.3 zFeatures 1) Power mold type (CPD) 2) High reliability 3) Low VF 4) Very fast recovery
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RF501B2S
SC-63
RF501B2S
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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RF2001
Abstract: 1SR154 1SR154 400V download diode rectifier RF2001T3D RR274EA-400 10a ultra fast diode 1SR154-400 RR274EA diode 1SR154-400
Text: 2009 Product Catalog Discrete Semiconductors Fast Recovery Diodes Rectifier Diodes Fast Recovery Diodes ROHM’s RF series utilizes a unique process for the highest recovery characteristics in the industry. The novel design, which emphasizes low loss and high reliability, has been well received in the market, resulting in the number one
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R0039A
52P6148E
RF2001
1SR154
1SR154 400V
download diode rectifier
RF2001T3D
RR274EA-400
10a ultra fast diode
1SR154-400
RR274EA
diode 1SR154-400
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TO-220FN
Abstract: RF diodes TO220FN 10na RF2001T2D RF1001T2D common anode fast
Text: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss
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O-220FN,
O-220FN
Fa301B2S
RF501B2S
RF601B2D
RF601T2D
RF1001T2D
RF1601T2D
RF2001T2D
TO-220FN
RF diodes
TO220FN
10na
common anode fast
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RF071M2S
Abstract: RF1001T2D RF101L2S RF1601T2D RF2001T2D RF301B2S RF501B2S RF601B2D RF601T2D TO-220FN
Text: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss
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O-220FN,
O-220FN
RF071M2S
RF1001T2D
RF101L2S
RF1601T2D
RF2001T2D
RF301B2S
RF501B2S
RF601B2D
RF601T2D
TO-220FN
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