Contextual Info: RFB18N10CSHM Transistors N-Channel Enhanc. MOSFET w/ Current Sensing V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)18# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)56# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)79 Minimum Operating Temp (øC)-55õ

F18N10CS

Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
Contextual Info: HARRIS SbE D 43GE271 □ 0 4 2 2 1 b August 1991 Features TDM « H A S RFB18N10CS/ CSVM/CSHM Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor S E M C O N D SECTOR • p s s - q o Package • 18 A, 100V T S -0 0 1 5 LEAD TOP VIEW • rD S (O N ). ° - 1 fl