RFP30P05 Search Results

f1s30p05

Abstract: RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334
Contextual Info: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 50V Formerly developmental type TA09834. Ordering Information PACKAGE 2436.4 Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses

F1S30P05

Contextual Info: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model

Contextual Info: P *3 3 S RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits, gives optimum

F1S30P05

Abstract: RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334
Contextual Info: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives

f1s30p05

Abstract: RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris
Contextual Info: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM S E M I C O N D U C T O R 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 50V rDS ON = 0.065Ω Temperature Compensating PSPICE Model

RFP30P

Contextual Info: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs [ /Title RFG3 0P05, RFP30 P05, RF1S3 0P05S M /Subject (30A, 50V, 0.065 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power

Contextual Info: mtefsil RFG30P05, RFP30P05, RF1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives

Contextual Info: RFP30P05 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)30# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)75# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)120# Minimum Operating Temp (øC)-55õ

Complementary MOSFETs buz11

Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Contextual Info: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3

Contextual Info: T T \ IP IFA D L T C 1 1 4 9 - 3 , / L tS ^ TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators KflTU IK S DCSCRIPTIOn • Operation to 48V Input Voltage ■ Ultra High Efficiency: Up to 95% ■ Current-Mode Operation for Excellent Line and Load

80-DF

Abstract: 100MF 35v lt1149
Contextual Info: uTECHNOLOGY i m ^ L T C IM LTC1149- TCI 149-5 High Efficiency Synchronous Step-Down Switching Regulators FCOTUfteS A DCSCRIPTIOn • Operation to 48V Input Voltage ■ Ultra High Efficiency: Up to 95% ■ Current-Mode Operation for Excellent Line and Load

irf540n irf640

Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Contextual Info: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S

RFD14N05 spice

Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
Contextual Info: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance

p12p10

Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Contextual Info: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851

rfp50n06 equivalent

Abstract: BUZ71A equivalent buz11 equivalent BUZ71 equivalent IRF9540 equivalent RFP12N10L equivalent irf740 equivalent ICM755 IRF640 equivalent 555 timer for lm555cn
Contextual Info: Intersil Timers, Oscillators, Rectifiers and MOSFETs Timers/Oscillators Mfr.Õs Type Max. Output Frequency Astable Description Package Type LM555CN Timer for Time Delays and Oscillator Applications 10 KHz (Typ.) +4.5 V to +18 V @ 15 mA 8 Lead PDIP ICM7555IBA

Contextual Info: LTC1149 LTC1149-3.3/LTC1149-5 High Efficiency Synchronous Step-Down Switching Regulators DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1149 series is a family of synchronous stepdown switching regulator controllers featuring automatic

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

IRF510N

Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
Contextual Info: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5

1N4002 diode download datasheet

Abstract: IRFZ44 "pin compatible" DIODE E91 IRFZ44 mosfet for square wave inverter WSC-1/2 inverter power 12v dc to 220 dc circuit diagram BLH DHF tapped inductor boost converter circuit diagram for 48v automatic battery charger interfacing of ad558
Contextual Info: LT1054 Switched-Capacitor Voltage Converter with Regulator U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1054 is a monolithic, bipolar, switched-capacitor voltage converter and regulator. The LT1054 provides higher output current than previously available converters

Power MOSFETs

Abstract: p-channel mosfet p-channel 8a RFD8P05SM rfp12p10 30V 60A power p MOSFET 15a 50v p-channel mosfet
Contextual Info: i n t e r cil P-Channel Standard Gate _ Power MOSFETs | I m P ow er M O SFE T P ro d u cts PAGE P-Channel Test Circuits and W avefo rm s.

Contextual Info: unm LTC1149-3.3/LTC TM9-5 TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators F€flTUR€S DCSCRIPTIOn • Operation to 48V Input Voltage ■ Ultra High Efficiency: Up to 95% ■ Current-Mode Operation for Excellent Line and Load Transient Response

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

IRF540N

Abstract: MOSFET IRF540n huf76639p3 HRF3205 equivalent HUF75623P3 ITF87056DQT huf75339 RF1K49093 HRF3205 HRFZ44N
Contextual Info: Power MOSFET SPICE and Thermal Models TM Features • • • • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents Package Inductances Gate Source Resistance Third Quadrant Diode Operation