RFPAK Search Results

Hitachi DSA002779

Contextual Info: 2SK1575 Silicon N-Channel MOS FET Application VHF amplifier Features • High gain, high efficiency PG = 13 dB, ηD = 65% typ f = 190 MHz • Compact package Suitable for push - pull circuit Outline RFPAK-B 3 4 5 2 1 D D 1. Drain 2. Drain 3. Source 4. Gate

Contextual Info: 2SK2217 Silicon N-Channel MOS FET HITACHI ADE-208-347A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficiency PG = 10 dB , Pout = 60 W, r|D = 55% typ f = 860 M Hz • Compact package Outline ; RFPAK-C 3 _

Contextual Info: 2SK1999 Silicon N-Channel MOS FET HITACHI Application V H F am plifier Features • H igh gain, high efficiency • C om pact package PG = 15 dB , r D = 65% typ f - 200 M Hz) Suitable for push - pull circuit Outline RFPAK-B 4 3 1. Drain 2. Drain 3. Source

2SK3175A

Abstract: rfpak DSA003640 Hitachi DSA003640
Contextual Info: 2SK3175A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1452 Z 1st. Edition September 2001 Features • High power output, High gain, High efficiency P1dB = 110 W, PG = 16.0 dB, ηD = 60 % (at P1dB) typ. (f = 860MHz) • Compact package Outline RFPAK-G

Contextual Info: As of January, 2003 2-R1.6 11.7 ± 1.0 15.4 ± 0.3 15.6 ± 0.3 3.2 ± 0.3 9.6 ± 0.3 22.8 ± 0.5 5.67 ± 0.5 4.14 ± 0.3 2.5 ± 0.3 0.1 26.0 ± 0.5 3.14 ± 0.3 C1.0 12.8 ± 0.3 16.8 ± 0.5 (0.5) Unit: mm Package Code JEDEC JEITA Mass (reference value) RFPAK-G

Hitachi DSA002780

Contextual Info: 2SK1999 Silicon N-Channel MOS FET Application VHF amplifier Features • High gain, high efficiency PG = 15 dB, ηD = 65% typ f = 200 MHz • Compact package Suitable for push - pull circuit Outline RFPAK-B 3 4 5 2 1 D D G G S 1. Drain 2. Drain 3. Source

OS492

Abstract: 2SK1575
Contextual Info: 2SK1575 Silicon N-Channel MOS FET HITACHI Application V H F am plifier Features • H igh gain, high efficiency P G = 13 dB, r|D = 65% typ f = 190 M H z • C om pact package Suitable for push - pull circuit Outline RFPAK-B 4 D 3 1. Drain 2. Drain 3. Source

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2C10

Contextual Info: As of January, 2003 0.5 29.6 ± 0.5 2-R1.6 11.7 ± 1.0 15.4 ± 0.3 3.2 ± 0.3 2-C1.0 Unit: mm 12.8 ± 0.3 28.4 ± 0.3 9.6 ± 0.3 13.0 ± 0.3 35.6 ± 0.5 Package Code JEDEC JEITA Mass (reference value) 5.67 ± 0.5 4.14 ± 0.3 3.14 ± 0.3 2.5 ± 0.3 (0.1)

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2SK318

Contextual Info: 44^205 2SK318- 0013D35 245 • HIT4 HITACHI/ OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • • Gate is Protected by Zenner Diodes. No Secondary-Breakdown.

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

5252 F 1108

Abstract: 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211
Contextual Info: B 2 S A series P 5 5 6 8 8 8 6 6 6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 9 5 5 5 5 5 5 5 5 5 6 5 5 8 8 8 6 P*c*^aeoda TO-92 TO-92 TO-92 TO-126M TO-126M TO-126M TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92

hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Contextual Info: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3

2SK317

Abstract: HF VHF power amplifier 2sk317 hitachi k317
Contextual Info: • 2SK317 4 4 ^ 2 0 5 0013033 472 ■ H I T 4 HITACHI/ OPTOELECTRONICS blE lT SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. Gate is Protected by Zenner Diodes. No Secondary-Breakdown.

2sk317

Abstract: rfpak 2SK3175A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SJ56 2sk176

Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SJ56 HITACHI 2SK1058 MOSFET
Contextual Info: HITACHI 5 1.4 S-Series for Power Amplifiers output stages can easily be designed just by connecting extra power MOSFETs in parallel. This flexibility arises from th e p o sitiv e temperature coefficient of the pow er MOSFET, which gives the transistor the ability to share

2sk3174

Abstract: 2SK3174A DSA003640
Contextual Info: 2SK3174A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1451 Z 1st. Edition September 2001 Features • High power output, High gain, High efficiency P1dB = 220 W , PG = 15.3dB , ηD = 61 % (at P1dB) typ. (f = 860MHz) • Compact package Suitable for push - pull circuit

2sk408

Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595
Contextual Info: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB

PT740 AB

Abstract: 095G Unitechno rfpak fuji semiconductors manual 652B0082211-002 ADE-410-001J BP-108 EDR7315 QP4-064050-002-A
Contextual Info: Hitachi Semiconductor Package Data Book ADE-410-001J 11th Edition March/2002 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

rfpak

Abstract: 2SK3174 2SK3174A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog